新型功能碳材料的高压截获

高性能功能材料在诸多领域具有广泛的应用前景,是人们一直关注的研究热点。高压可以有效地改变物质的原子间距和成键方式,是获得新型功能材料的重要途径。在碳材料的高压研究中,许多有趣的功能碳材料,如光学透明碳、高强度弹性碳和超硬非晶碳等,已经通过不同的碳前驱体合成。本文简要介绍了作者近年来在低维碳基纳米复合材料高压研究中取得的进展,基于设计的不同低维碳前驱体,高压下截获了具有超硬特性、新型压致共价聚合及发光增强的碳材料。     

巯基乙酸锑(Ⅲ)配合物合成与晶体结构

以三氧化二锑和巯基乙酸在水溶液中反应合成了配合物HSb(SCH2COO)2,并通过元素分析、红外光谱、X射线粉末衍射进行了表征,利用单晶X射线四圆衍射法测定了晶体结构,结果表明该配合物晶体属于单斜晶系,C2/c空间群,晶胞参数为:a=1.40005(8)nm,b=1.19121(8)nm,c=1.23588(8)nm,β=126.822(1)°,V=1.6499(2)nm^3,Dc=2.439g·cm^-3,Z=8,R1=0.0250。并对X射线粉末衍射数据进行了指标化,其结果与单晶数据吻合。     

新型机载激光测深系统及其飞行实验结果

新研制的机载激光测深系统与第一代机载激光测深系统相比,在探测信号采集率、浅水测量能力、测点定位精度和系统的自动化方面都有较大的提高。新系统采用1000 Hz激光器以提高测量密度,分设深水浅水双通道接收回波信号以提高浅水探测能力,装配高精度的惯性导航系统(IMU)和全球定位系统(GPS)提高了测点的定位精度和深度精度,数据后处理进行了潮汐改正和波浪改正提高深度测量的精度。系统在某海域进行了多次飞行实验,实验数据经过分析和处理,得到了比较满意的结果,表明该激光测深系统在测深精度和测量效率等方面,已经接近实用化。     

动边界量子含时谐振子系统的Lewis-Riesenfeld相位与Berry相位

根据Lewis-Riesenfeld的量子不变量理论,计算了一维动壁无限深势阱内频率随时间变化的谐振子的Lewis-Riesenfeld相位,发现刘登云文中“非绝热Berry相位”与Lewis-Riesenfeld相位中的几何部分完全一致.也许更为重要的是,证明了至少对于做正弦振动的边界,在绝热近似下,该系统不存在非零的Berry相位. 关键词： Berry相位 Lewis-Riesenfeld相位 量子不变量 动边界     

X波段微带集成FET的压控振荡器

本文叙述了一种利用FET振荡管和GaAs超突变结变容二极管构成的电压控制振荡器(VCO).通过合理的电抗补偿和阻抗匹配技术的应用,VCO在8GHz得到调谐带宽1200MHz,输出功率大于20mW.     

一种带氧化槽的双栅LDMOS

提出了一种带氧化槽的双栅体硅LDMOS结构(DGT LDMOS).在漂移区中引入一个氧化槽,在该槽上形成埋栅,同时形成一个槽栅.首先,双栅形成双导电沟道,减小了比导通电阻;其次,氧化槽折叠了漂移区,这不仅调制了电场的分布,而且提高了漂移区的优化浓度,有效提高了击穿电压,降低了比导通电阻.采用二维数值仿真软件MEDICI,对器件参数进行仿真和优化设计.结果表明,相对于普通体硅LDMOS(SG LDMOS),该结构的比导通电阻下降了56.9％,击穿电压提高了82.4％.在相同尺寸和击穿电压下,相对于单槽栅体硅LDMOS(SGT LDMOS),DGT LDMOS的比导通电阻下降了35.4％.     

8×8 MEMS光开关阵列的制作

采用MEMS技术制作了静电驱动的扭臂结构8×8光开关阵列,主要包括上下电极的制作.利用硅在KOH溶液中各向异性腐蚀特性及(110)硅的结晶学特点,在(110)硅片上制作出8×8光开关微反射镜上电极阵列,考虑到在腐蚀时微反射镜有很大的侧蚀,对开关结构进行了调整.在偏一定角度的(111)硅片上制作了倾斜的下电极.整个开关制作工艺简单,成本低.开关寿命大于1000万次,开关时间小于10ms.     

INTERLAYER EXCHANGE COUPLING IN COMPLEX MAGNETIC MULTILAYERS

We extend the hole confinement model of Edwards et al. to the problem of two kinds of complex magnetic sandwich structures. One is the magnetic sandwich covered on both sides by nonmagnetic films(case 1) and the other is that covered by magnetic films(case 2). The interlayer exchange coupling and the angular dependence of coupling energy in the two cases are investigated systematically. For case 1, our results show that the magnetic and outer nonmagnetic films influence significantly the oscillation behavior of exchange coupling and the appearance of noncollinear exchange coupling is very sensitive to the thickness of magnetic and outer nonmagnetic layers. Our results also show that the nonoscillatory component of the coupling generally varies with the thickness of magnetic(outer nonmagnetic) films and the results in the case where the thickness of both magnetic(outer nonmagnetic) films vary simultaneously are significantly different from that in the case where the thickness of one of the two magnetic(outer nonmagnetic) films is fixed while the other is varied, which is qualitatively in agreement with the experimental measurements. For case 2, the exponential dependence of exchange coupling on the thickness of the intermagnetic layer has been obtained, similar to the Parkin's experimental results for giant magnetoresistance.     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

面内磁场对硬磁泡形成的影响

实验研究了面内磁场对一次脉冲偏磁场作用下外延石榴石薄膜中硬磁泡形成的影响,发现存在一个使硬磁泡不再形成的临界面内磁场H_in⁰,它与材料参量有关,通过实验,运用面内磁场对条状畴的作用和枝状畴的形成,定性解释了软硬磁泡形成的分界场H_[b]随面内磁场增大、快降以及缓降这三个物理过程。 关键词：