基于微结构参数建模的多孔硅绝热层热导率研究

多孔硅由于具有较低的热导率,因而可以将其作为半导体器件中的绝热层.与其他从边界散射等复杂微观热传导机制出发建模研究多孔硅的热导率不同,将多孔硅热导率影响机制更表观地归结到孔洞的存在和分布等结构因素上,把整个多孔硅视为由硅连续材料介质和孔洞连续介质通过串联和并联组合成的复合微结构,给予其低热导率一个更为易于理解和简化的解释.进一步把孔隙率对等效热导率的影响分解为两个不同的部分,即纵向部分和横向部分,半定量地给出不同的孔洞结构和分布下孔隙率与等效热导率的关系.与实验数据进行对比后验证了模型的有效性.继而从结构的角度说明了多孔硅热导率较低的原因.     

Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.     

Density functional theory study of the interaction of H2 with pure and Ti-doped WO3 (002) surfaces

Density functional theory (DFT) calculations are conducted to explore the interaction of H₂ with pure and Ti-doped WO₃ (002) surfaces. Four top adsorption models of H₂ on pure and Ti-doped WO₃ (002) surfaces are investigated respectively, they are adsorption on bridging oxygen O_1c, absorption on plane oxygen O_2c, absorption on 5-fold W_5c (Ti), and absorption on 6-fold W_6c. The most stable and H₂ possible adsorption structure in the pure surface is H-end oriented to the surface plane oxygen O_2c site, while the favourable adsorption sites for H₂ in a Ti-doped surface is not only an O_2c site but also a W_6c site. The adsorption energy, the Fermi energy level E_F, and the electronic population are investigated and the H₂-sensing mechanism of a pure-doped WO₃ (002) surface is revealed theoretically: the theoretical results are in good accordance with our existing experimental results. By comparing the above three terms, it is found that Ti doping can obviously enhance the adsorption of H₂. It can be predicted that the method of Ti-doped into a WO₃ thin film is an effective way to improve WO₃ sensor sensitivity to H₂ gas.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.     

基于飞秒激光模间拍频法的大尺寸测距方法

本文基于飞秒激光模间拍频法实现多波长相位式绝对距离测量, 通过改变光频梳重复频率合成波长扩大测距量程, 并采用监测臂和双快门切换系统补偿和消除由电路产生的相位差单向漂移和大幅抖动. 实验中以20倍重复频率的拍频进行测量, 在30 min内相位测量的标准偏差为0.022°; 与双频激光干涉仪比对1125 mm行程内位移测量结果, 测距精度优于50 μm; 实验验证了合成波长方法扩大量程方案的可行性, 获得的测距重复性优于3 μm, 该系统理论上可扩展量程至7.5 km.     

NBT-NaNbO3-BaTiO3无铅压电材料的研究

主要研究了(NaBi)0.5TiO3-NaNbO3-BaTiO3三元系无铅压电材料的介电、压电性能。随着第三种材料BaTiO3引入量的增加。三元系材料的介电常数和损耗均出现增大的现象。当n(Ba^2 )=0．02mol时。三元系材料的压电常数d33、机电耦合系数氐值都达到最大值100pC／N和0．41。     

L a 0. 7 5S r 0. 2 5Mn 1 - xO3钙钛矿材料的相结构研究

本文利用溶胶凝胶法, 成功制备了名义成分为L a 0. 7 5S r 0. 2 5Mn 1 - xO3( x =0. 0 0, 0. 0 3, 0. 0 5, 0. 0 8, 0. 1 0, 0. 1 3, 0. 1 5, 0. 1 7)的含有B位空位的钙钛矿样品, 最高煅烧温度为10 7 3K. 利用软件X '' P e r tH i g h S c o r eP l u s对样品 的XR D图谱进行分析, 当x≤0. 0 8的样品为钙钛矿单相, 其余样品含有次相镧的氧化物, 说明B位空位存在最大 值 , 0. 0 8相似文献   

用于大气吸收测量的小型电激励连续波DF/HF选线化学激光器

介绍了用于大气吸收测量的电激励双模块小型连续波DF/HF选线化学激光器,描述了其结构、运转方式和激光器的性能。在采用一级振荡、一级输出的利特罗(Littrow)自准直光栅色散腔结构的前提下,激光器目前共获得17支DF激光谱线,11支HF激光谱线,大部分单谱线基横模输出超过1 W,单次连续出光时间超过30 min,功率稳定性在±5%以内。将激光器激光光栅改装为球面腔镜后也可输出多谱线DF/HF激光,功率水平为20 W,选模后基横模输出6~8 W。     

基于Cyclam衍生物的单核金属配合物的结构及核酸酶活性

以1,8-二甲基-1,4,8,11-四氮杂环十四烷为原料,以N,N′-二叔丁氧羰基-2-甲璜酰氧基-1,3-二氨基丙烷为烷基化试剂,合成了cyclam衍生物:1,8-二(N,N′-二叔丁氧羰基-1,3-二氨基异丙基)-4,11-二甲基-1,4,8,11-四氮杂环十四烷(L1);及其对应的系列单核金属配合物,Zn(L1)Cl2(1),Ni(L1)Cl2(2)和Cu(L1)Cl2(3);核磁结果表明,L1为C2对称结构,且cyclam环上每一个亚甲基碳上的2个氢化学不等价;利用2D[1H,15N]HSQC对比配体配位前后N-H化学位移的变化,确定配合物的结构是金属与配体cyclam环上的4个氮原子配位;利用变温核磁1H NMR和13C NMR,结合2D[1H,15N]HSQC核磁共振波谱表明,配合物1在溶液中主要以两种构型并存,并主要以trans-Ⅲ构型存在。此外,用凝胶电泳研究了配体与单核金属配合物对超螺旋p BR322质粒DNA切割活性;实验结果表明,配合物3在抗坏血酸存在的条件下具有核酸酶活性,而配体(L1),配合物1和配合物2在实验条件下,无论是氧化切割还是水解切割都显阴性。     

氧化钒/多孔硅/硅结构的微观形貌、纳米力学及温敏特性

采用电化学腐蚀法在硅基片表面形成多孔硅, 利用直流对靶反应磁控溅射方法在不同电流密度条件下制备的多孔硅样品表面上溅射沉积了VOx薄膜, 获得了氧化钒/多孔硅/硅(VOx/PS/Si)结构. 采用场发射扫描电镜(FESEM)观测多孔硅及VOx/PS/Si结构的微观形貌, 采用纳米压痕仪器测量VOx/PS/Si结构的纳米力学特性, 通过电阻-功率曲线分析研究其温度敏感特性. 实验结果表明, 在40和80 mA·cm-2电流密度下制备多孔硅的平均孔径分别为18和24 nm, 用显微拉曼光谱法(MRS)测量其热导率分别为3.282和1.278 kW·K-1; VOx/PS/Si结构的电阻随功率变化的平均速率分别为60×10⁹和100×10⁹ Ω·W-1, VOx/PS/Si结构的显微硬度分别为1.917和0.928 GPa. 实验结果表明, 多孔硅的微观形貌对VOx/PS/Si结构的纳米力学及温敏特性有很大的影响, 大孔隙率多孔硅基底上制备的VOx/PS/Si 结构比小孔隙率多孔硅基底上制备的具有更高的温度灵敏度, 但其机械稳定性也随之下降.