碳纳米管场发射冷阴极的低温制备及场发射性能

利用纳米银的低温熔接性和良好导电性,研究了以纳米银取代传统的有机粘结剂和导电银浆制备CNTs场发射冷阴极的新工艺.将CNTs、纳米银、粘性松油醇和有机溶剂混合研磨后涂敷在镀Cu玻璃基片上,250℃烧结30min后,纳米银颗粒之间互相熔接,将周围的CNTs粘结成为整体膜,形成了表面平整、导电性和场发射性能良好的CNTs阴极.测量了不同纳米银掺入量的CNTs阴极的场发射性能,结果表明:当CNTs:Ag质量比率为1:1时,CNTs阴极具有最好的场发射性能,阈值电场为4.9V/μm,当电场强度为5.7V/μm时,场发射电流密度为41mA/cm2.纳米银比例过大,烧结后CNTs被熔接的银膜覆盖,高电压时场发射电流明显下降,而纳米银掺入量太少则会导致CNTs阴极的附着力和导电性变差.     

基于微结构参数建模的多孔硅绝热层热导率研究

多孔硅由于具有较低的热导率,因而可以将其作为半导体器件中的绝热层.与其他从边界散射等复杂微观热传导机制出发建模研究多孔硅的热导率不同,将多孔硅热导率影响机制更表观地归结到孔洞的存在和分布等结构因素上,把整个多孔硅视为由硅连续材料介质和孔洞连续介质通过串联和并联组合成的复合微结构,给予其低热导率一个更为易于理解和简化的解释.进一步把孔隙率对等效热导率的影响分解为两个不同的部分,即纵向部分和横向部分,半定量地给出不同的孔洞结构和分布下孔隙率与等效热导率的关系.与实验数据进行对比后验证了模型的有效性.继而从结构的角度说明了多孔硅热导率较低的原因.     

嵌入式Linux终端设备中通过USB同步数据的设计与实现

介绍了USB的广泛应用以及在嵌入式Linux系统中增加USB支持的几种理论方法,集中在ethernet over USB,然后详细介绍了基于PXA255嵌入式linux系统中通过USB进行数据同步的实现,电路设计,驱动中具体进行数据传输的实现,热插拔的实现以及主机方的配置。     

Pt—WO3薄膜气敏传感器的气敏性能研究

用直流反应磁控溅射法制备了Pt-WO3气敏薄膜,进行了薄膜晶体结构和表面形貌的分析,研究了添加Pt对WO3电学和气敏特性的影响。实验证明:当Pt膜厚为4 nm时,WO3薄膜对气体的敏感特性得到改善,对φ(NO2)=5×10-6和φ(NH3)=10×10-6的工作温度均降低了50℃,灵敏度分别达到11.5和900,是纯WO3薄膜的2~3倍,且响应时间缩短。     

Pt-W03薄膜气敏传感器的气敏性能研究

用直流反应磁控溅射法制备了Pt-WO3气敏薄膜,进行了薄膜晶体结构和表面形貌的分析,研究了添加Pt对WO3电学和气敏特性的影响.实验证明:当Pt膜厚为4 nm时,WO3薄膜对气体的敏感特性得到改善,对(∮)(NO2)=5和(∮)(NH3)=10×10-6的工作温度均降低了50℃,灵敏度分别达到11.5和900,是纯WO3薄膜的2～3倍,且响应时间缩短.     

Push和pull两种调度机制的仿真分析与研究

针对当前高性能路由器普遍采用的多级多平面交换结构,对"push"和"pull"这两种最常用的调度机制进行了分析.通过搭建opnet平台对这两种调度机制进行了仿真对比,结果表明,两种调度机制各有优缺点,需要根据实际需求来选择合适的调度机制.     

A new direct band gap silicon allotropeο-Si32

Silicon is a preferred material in solar cells,and most of silicon allotropes have an indirect band gap.Therefore,it is important to find new direct band gap silicon.In the present work,a new direct band gap silicon allotrope of o-Si32 is discovered.The elastic constants,elastic anisotropy,phonon spectra,and electronic structure of o-Si32 are obtained using first-principles calculations.The results show that o-Si32 is mechanically and dynamically stable and is a direct semiconductor material with a band gap of 1.261 e V.     

G.654.E光纤承载超100Gbit/s OTN系统应用分析

针对G.654.E光纤即将商用于超100 Gbit/s OTN系统而无相应规范标准的问题,本文首先利用香农定理和光信噪比公式理论分析传输速率的受制因素,接着分析OTN系统的最大光放段损耗值中的中继段损耗、活接头损耗和色散补偿光纤插损,然后推算出G.654.E光纤承载超100 Gbit/s OTN系统中不同传输速率下的复用段距离,并与实际测试值进行对比分析,最后结合骨干网络现状情况,提出G.654.E光纤承载超100 Gbit/s OTN技术应用建议。     

Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.