再结晶钝钼片材尺寸对延—脆性转变温度的影响

本文在液氮温度到室温范围内，对不同宽度和厚度的试样进行了三点弯折试验，研究了试样尺寸对再结晶纯钼片材的延－脆性转变温度的影响。本研究用二个参数、即临界应力和临界温度描述材料的延－脆性转变特性，结果归纳如下：（１）试样厚度为１．０ｍｍ时，试样宽度在１￣４ｍｍ范围内宽度对临界应力和临界温度的影响几乎可忽略不计。（２）试样宽度为４ｍｍ时，试样厚度在０．５￣１．０ｍｍ范围内厚度对临界应力和临界温度的影响几     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

多发弹丸发射系统阀门电源及可编程发射控制器的研制

多发弹丸发射系统是我院20世纪90年代从俄罗斯引进的设备，用于发射弹丸的快阀门电源属于非标产品，其备件缺乏，维修困难。为保证HL-2A装置弹丸注入实验顺利进行，根据设计要求，研制了这套弹丸快阀电源和可编程发射控制器。它们之间的连接如图1所示。     

激光准直仪的设计性物理实验

介绍了激光准直仪的结构、工作原理及其在设计性物理实验中的应用     

在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。     

激光标线的原理和实验

根据几何光学知识分析了激光标线原理.理论和实验表明:激光标线长度与激光光束形状、光学元件形状及材料折射率有关.并讨论了激光标线向两侧扩展的原因.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

激光推进的基本原理和实验进展综述

激光推进是一种新型的推进模式,按作用机理可分为大气模式激光推进和火箭烧蚀模式激光推进两种。分析了两种推进模式的作用原理,论述了激光推进的最新研究进展。     

色散控制光孤子

文章以非线性薛定谔方程为基础 ,通过系统仿真说明了色散控制孤子稳定传输的原理 ,介绍了色散控制孤子的优点之一——能量增强因子的特点 ,并着重分析了非线性相互作用在传输中的影响