采用符号替换的先行进位光学并行全加器的研究

提出了新的符号替换逻辑操作方法,实现与门、或门、异或门等基本逻辑操作。将这些符号替换逻辑操作应用于先行进位光学并行全加器中,实现了多位二进制数的光学并行全加器,显示了符号替换操作在并行处理方面的优势。     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.     

Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application

After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K).     

Trend of extreme precipitation events over China in last 40 years

Using the daily precipitation data of 740 stations in China from 1960 to 2000, the analysis on the variations and distributions of the frequency and the percentage of extreme precipitation to the annual rainfall have been performed in this paper. Results indicate that the percentage of heavy rains （above 25mm/day） in the annual rainfall has increased, while on average the day number of heavy rains has slightly reduced during the past 40 years. In the end of 1970s and the beginning of 1980s, both the number of days with extreme precipitation and the percentage of extreme precipitation abruptly changed over China, especially in the northern China. By moving t test, the abrupt change year of extreme precipitation for each station and its spatial distribution over the whole country are also obtained. The abrupt change years concentrated in 1978-1982 for most regions of northern China while occurred at various stations in southern China in greatly different/diverse years. Besides the abrupt change years of extreme precipitation at part stations of Northwest China happened about 5 years later in comparison with that of the country＇s average.     

基于迭代顺序滤波子空间约束的可拒识-支持向量机微钙化点检测

为提高钙化点检测速度,克服微钙化点检测中假阳性高的缺点,本文构造了一种迭代顺序滤波子空间约束的可拒识-支持向量机分类器用于钙化点检测.训练时利用迭代顺序滤波检测作为钙化点的粗检测算子,然后在其约束的子空间内收集非钙化点训练样本.对于输入模式,首先利用基于最大软间隔超平面的支持向量分类器(SVC)进行分类判决;然后对真实的钙化点样本特征空间求取最小的包含球形边界,得到钙化点样本的球形支持向量域表示(SVDD).对于输入模式即可利用钙化点的支持向量域表示进行拒识或接受处理.仿真实验结果表明,本文提出的算法在不影响微钙化点的检出率的情况下,大大提高了检测速度,部分解决了假阳性高的问题.     

用氧化多孔硅方法制备厚的SiO_2膜及其微观分析

用氧化多孔硅的方法来制备厚的 Si O2 成本低 ,省时 .氧化硅膜的厚度 ,表面粗糙度和组分这三个参数 ,对波导器件的性能有重要影响 ,扫描电子显微镜 ( SEM)、原子力显微镜 ( AFM)和俄歇分析得到 :氧化的多孔硅的膜厚已达 2 1 .2μm;表面粗糙度在 1 nm以内 ,Si和 O的组分比为 1∶ 1 .90 6.这些结果表明 ,用氧化多孔硅方法制备的厚 Si O2 膜满足低损耗光波导器件的要求     

阵列波导光栅复用/解复用器光栅孔径对器件性能影响的数值分析

阵列波导光栅复用 /解复用器中波导光栅孔径是器件重要的结构参数 .波导光栅孔径数值有限 ,部分光场将因未被耦合进而损失掉 .同时引起输出波导接收端焦场变形 ,增加了器件串扰 .本文详细分析和计算了由于波导光栅孔径有限引起的光场损耗和信号串扰 ,选择适当孔径参数可使其引入的信号损耗和串扰降到足够低 ,以优化设计器件     

基于光线追迹的长线列摆扫式热像仪在轨几何成像仿真方法

针对卫星发射前在轨数据缺乏导致的无法进行成像质量评估、链路分析及几何处理算法验证等问题,提出了一种基于光线追迹的长线列摆扫式热像仪在轨几何成像仿真方法.首先根据光学系统结构及成像特点,构建了长线列摆扫式热像仪严格几何定位模型;然后,基于姿轨仿真数据、DOM和DEM辅助数据,通过光线追迹及重投影算法实现了像元视矢量的空间...     

基于修正VAD技术的非线性风场反演方法研究

对流风暴的新生和发展演变与三维风场存在密切联系,多普勒天气雷达可利用多普勒效应测量径向速度,可及时地反映风场信息.基于线性风场假设和全方位均匀采样的速度方位显示(VAD)技术是目前应用最广泛的使用单部多普勒雷达反演风场的方法,然而对于台风、龙卷等强对流天气系统,其内部风场空间分布复杂,线性风场假设不成立,以及由于机动平...     

640×512小型化红外探测器杜瓦组件可靠性研究

在SWaP3(Size,Weight,and Power,Performance and Price)概念的驱使下,第三代制冷红外探测器向着高性能、小型化和轻量化的方向发展.作为军用核心电子元器件,制冷红外探测器的可靠性成为研究的重点.以浙江珏芯微电子有限公司所研制的640×512/15μm小型化杜瓦组件为研究对象,开...