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21.
Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors
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The effect of substrate bias on the degradation during applying a
negative bias temperature (NBT) stress is studied in this paper.
With a smaller gate voltage stress applied, the degradation of
negative bias temperature instability (NBTI) is enhanced, and there
comes forth an inflexion point. The degradation pace turns larger
when the substrate bias is higher than the inflexion point. The
substrate hot holes can be injected into oxide and generate
additional oxide traps, inducing an inflexion phenomenon. When a
constant substrate bias stress is applied, as the gate voltage
stress increases, an inflexion comes into being also. The higher
gate voltage causes the electrons to tunnel into the substrate from
the poly, thereby generating the electron--hole pairs by impact
ionization. The holes generated by impact ionization and the holes
from the substrate all can be accelerated to high energies by the
substrate bias. More additional oxide traps can be produced, and
correspondingly, the degradation is strengthened by the substrate
bias. The results of the alternate stress experiment show that the
interface traps generated by the hot holes cannot be annealed, which
is different from those generated by common holes. 相似文献
22.
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures
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Current transport mechanism in Ni-germanide/n-type Ge
Schottky diodes is investigated using current--voltage
characterisation technique with annealing temperatures from 300~\duto 500~\du. Based on the current transport model, a simple method to
extract parameters of the NiGe/Ge diode is presented by using the
$I$--$V$ characteristics. Parameters of NiGe/n-type Ge Schottky
diodes fabricated for testing in this paper are as follows: the
ideality factor $n$, the series resistance $R_{\rm s}$, the
zero-field barrier height $\phi _{\rm b0}$, the interface state
density $D_{\rm it}$, and the interfacial layer capacitance $C_{\rm
i}$. It is found that the ideality factor $n$ of the diode increases
with the increase of annealing temperature. As the temperature
increases, the interface defects from the sputtering damage and the
penetration of metallic states into the Ge energy gap are
passivated, thus improving the junction quality. However, the
undesirable crystallisations of Ni-germanide are observed together
with NiGe at a temperature higher than 400~\du. Depositing a very
thin ($\sim $1~nm) heavily Ge-doped $n^{+}$ Ge intermediate layer
can improve the NiGe film morphology significantly. 相似文献
23.
针对氮化镓大功率放大器,由于传统1/4λ枝节线的电桥互耦造成放大器的直流自激和低频自激,在传统1/4λ传输枝节的Wilkinson电桥的基础上,结合氮化镓器件尺寸,设计出以3/4λ传输枝节的Wilkinson电桥为功率分配器/合成器。其输出端口尺寸为27.2mm。在8GHz~9GHz内,插入损耗<1dB,输出端口隔离度>14dB,端口回波损耗>9dB。利用实验室自制的SiC材料衬底的2.5mm栅宽GaN HEMT器件为放大单元,设计完成了两路合成放大器,在8GHz连续波条件下,放大器饱和输出功率为41.46dBm,合成效率为82.3%。通过分析发现,放大器合成效率的下降主要是由每路放大单元特性不一致和功率合成网络损耗所造成的。 相似文献