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41.
Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter
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We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion (WC) using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band. 相似文献
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高清晰度电视(以下简称高清电视)是在现代微电子技术、通信技术和信息技术高度发展的基础上集多方面的成就于一身的高科技产物,在我国已是热门话题。它的发展标志着一个国家的技术水平和经济实力,并能带动整个电子信息技术及相关产业领域的发展,成为技术发展的驱动器和经济发展的倍增器。高清电视是在现行三大彩色电视广播制式存在着一系列缺陷的情况下开发研制出来的新的电视系统。日本N H K率先从上世纪六十年代末开始探索新的电视系统,提出了H D T V这个术语并被各国普遍接受。“高清晰度电视”一词名称的概念是不完整、不确切的,它容… 相似文献
45.
We have observed strong scattering of a probe light by dilute Bose-Einstein condensate (BEC) ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap. 相似文献
46.
解读"十一五"发展纲要中推进三网融合的含义 总被引:2,自引:0,他引:2
2006年3月14日我国政府正式公布的“十一五”发展纲要提出:“加强宽带通信网、数字电视网和下一代互联网等信息基础设施建设,推进‘三网融合’,健全信息安全保障体系”,对前一个五年规划中“促进电信、电视、计算机三网融合”的提法做了进一步的界定. 相似文献
47.
All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer 总被引:1,自引:0,他引:1
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All-optical format conversion from return-to-zero (RZ) to non-return-to-zero (NRZ) is demonstrated with temperaturecontrolled all-fibre delay interferometer (DI) at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB. 相似文献
48.
Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer
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A new A1GaN/A1N/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm. 相似文献
49.
By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices. 相似文献
50.