专家数据库系统的设计与实现

分析、比较了专家系统与数据库管理系统中的搜索功能和库处理能力，采用两有效结合的方法建立了一个专家数据库系统模型，从而提出了开发信息系统的一种有效途径。     

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor(BJT) and the existence of the source plays an important role in supply voltage variation.     

Versapulse激光仪治疗太田痣3021例临床分析

我院1997年1月至2003年12月共收治患者共3021例,其中．男804例．女2217例。年龄最小者出生1个月开始治疗．年龄最大者56岁开始治疗。出生时即发病者1614例．其余者在出生后不同年龄段发病．初发病时年龄最大者为32岁1例。外伤、妊娠等因素诱发本病者15例．另有一例女婴在出生一月时因饮水不当引起严重窒息抢救后引发太田痣。     

通过汤姆逊XtenDD-2数字切换台的视频工作站实现帧存和特技制作

对于广播电视技术人员来说,在他们的头脑中或多或少都知道当今广电行业已经掀起了一场技术革命,那就是AV(音视频)技术与IT(信息技术)技术不断相互融合的革命,一些信息领域的技术正在或者即将在广播电视领域得到推广和应用,并快速成为标准。随着三网(电信网、计算机网、广播电视网)技术的发展和普及,三网技术相融合的新时代已经来临。其实提起这个,我们可以先不用高谈阔论什么视频传输网络化、无磁带化播出,甚至MPEG编码技术,你只要亲身体验一下汤姆逊XtenDD-2数字切换台的计算机控制面板就能深深的感受到AV技术与IT技术是如何完美无瑕的结合在一起的。     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

怎样指导学生写化学小论文

21世纪是科技高度发达的世纪,培养创造型新一代应当成为时代教学的主旋律。具体在化学教学中,引导学生写小论文是培养创造型人才的有效途径之一。     

GSM掉话原因及解决办法

由于天馈线系统原因而导致的掉话1）由于两副天线俯仰角不同而产生的掉话。在基站安装过程中,如果采用的是单极化的天线,当小区的DATABASE中参数CCCH-CONF=0时,小区的SDCCH和BCCH采用NO-COMBINEDMODE,这样一来,该小区的BCCH和SDCCH就有可能分别从两副不同的天线发出。当它们的俯仰角不同时,就会造成两副天线的覆盖范围不同,当用户在某一区域中能收到BCCH信号,但产生呼叫时却无法占用SDCCH而掉话。此外,俯仰角过小,会造成对附近同频站的干扰;过大则会对相邻站的邻频干扰。2）由于两副天线方位角的不同而产…