降噪阵列参数对次声降噪系统性能的影响分析

次声降噪系统对提高次声监测能力具有重要作用,为分析次声降噪系统阵列结构参数变化对其降噪性能的影响规律,构建玫瑰型(rosette)管道滤波器降噪系统声电等效模型,进而利用风噪声模型和仿真数据对该模型的单进气口传递函数和系统降噪性能进行了定量分析,总结了不同阵列结构参数对该系统降噪性能的影响规律,最后对国际监测系统(International Monitoring System,IMS)玫瑰型管道滤波器的降噪性能进行了评估。仿真实验及分析结果表明:(1)进气口数量约取96,阵列尺寸约18 m,一、二级管内径取10~20 mm,一、二级合成腔体积不得超过1 L,系统能获得较好的降噪性能;(2)IMS玫瑰型管道滤波器符合最佳阵列参数设置要求;(3)满足最佳阵列参数设置的玫瑰型管道滤波器可大幅度地提高信噪比。该分析结果可为已有次声降噪系统提供性能评估,可对新的次声降噪系统设计提供参考。      

532 nm脉冲激光辐照CCD实验研究

 采用532 nm,10 ns的脉冲激光对面阵CCD进行辐照实验,对每一阶段的实验现象和电路层面的破坏机理进行了深入分析,根据实验现象,把脉冲激光对CCD的硬破坏分为3个阶段：第1阶段在低能量密度激光辐照下,被破坏的CCD局部出现无法恢复的白色盲点,但其它部分仍可正常成像;第2阶段CCD探测器受到激光辐照后,在光斑处的时钟线方向出现白色竖直亮线,亮线处无法正常成像且激光辐照撤去后无法恢复;第3阶段受高能量密度激光辐照后,CCD完全失效,无法恢复成像。针对CCD的饱和及恢复阶段,利用Matlab编码对分辨力靶板的成像数据进行处理,分析了激光辐照CCD对饱和像元数和对比度的影响。结果表明：当CCD受到激光辐照时,饱和像元数迅速增多,图像对比度迅速下降为零,激光脉冲消失后,整个CCD成像亮度下降,饱和像元数迅速下降为零,经过一段时间后CCD又恢复至线性工作状态,激光的能量密度越高,CCD恢复所需的时间就越长。研究还发现：当恢复时间超过0.6 s,CCD出现不可恢复的白色条带,严重影响成像质量。     

重频激光对多壁碳纳米管悬浮液光限幅特性的影响研究

在激光以不同重复频率入射下,研究了直径分布为10～20 nm的多壁碳纳米管悬浮液对波长为1064 nm激光的光限幅效应,定性分析了不同重复频率激光对多壁碳纳米管悬浮液的光限幅影响。结果表明:碳纳米管悬浮液对波长为532 nm和1064 nm的激光都具有很强的光限幅响应;在多脉冲激光入射时,碳纳米管悬浮液的光限幅效应比单脉冲激光入射时更显著。     

Fe-C合金膜光纤腐蚀传感器传感规律研究

利用PVD溅射镀以及PVD与电镀复合两种方法在光纤纤芯上制备了不同厚度的Fe-C合金膜,对其进行X-射线衍射分析,所制膜层晶体结构类型与普通碳钢基本一致.通过将镀膜光纤放入不同浓度的HNO3溶液中以及埋入混凝土结构中,进行了腐蚀实验.结果表明:在低浓度的腐蚀溶液中,不同厚度的Fe-C合金膜会从外到内被均匀地腐蚀掉,输出光功率会在腐蚀末期有一个急剧的增大现象;在高浓度的腐蚀溶液中,Fe-C合金膜会在各个局部产生裂纹,膜层被一块一块地腐蚀掉;输出光功率整体趋势增大,但并没有特别急剧的增大现象;混凝土试块中的腐蚀实验中,输出光功率的变化复杂多变,但整体趋势还是一个增大的过程.     

通过汤姆逊XtenDD-2数字切换台的视频工作站实现帧存和特技制作

对于广播电视技术人员来说,在他们的头脑中或多或少都知道当今广电行业已经掀起了一场技术革命,那就是AV(音视频)技术与IT(信息技术)技术不断相互融合的革命,一些信息领域的技术正在或者即将在广播电视领域得到推广和应用,并快速成为标准。随着三网(电信网、计算机网、广播电视网)技术的发展和普及,三网技术相融合的新时代已经来临。其实提起这个,我们可以先不用高谈阔论什么视频传输网络化、无磁带化播出,甚至MPEG编码技术,你只要亲身体验一下汤姆逊XtenDD-2数字切换台的计算机控制面板就能深深的感受到AV技术与IT技术是如何完美无瑕的结合在一起的。     

光生态膜的荧光光谱对番茄生态的影响

通过番茄叶片的荧光光谱和激发光谱测量 ,能够得到番茄的光合作用之作用光谱。模拟番茄的作用光谱制备出荧光助剂 ,将荧光助剂分散进高分子树脂中制成棚膜。用这种光生态膜苫盖日光温室 ,在哈尔滨市道里区新发乡建国村进行了温室番茄种植的示范推广 ,番茄产量提高了 5 3 7% ,产值提高了 6 1 4 %。     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

射流冲击泡沫金属流动液膜传热的实验研究

薄液膜蒸发由于其优良的传热特性而被广泛应用于工业领域。在流动液膜上表面覆盖铜质泡沫金属,并耦合空气射流冲击,能够进一步强化传热。多孔泡沫金属提供的毛细驱动力能够有效控制流动液膜的厚度以避免干涸,同时多孔材料特殊的固体骨架构造可以扩大固液、气液传热面积。为了研究射流冲击条件下多孔介质覆盖流动液膜的传热特性,本文通过实验方法,对包括液膜流速Vf、空气射流速度Va、液膜厚度δf和多孔介质孔隙率ε在内的影响因素进行分析,研究并对比这些因素对加热壁面温度Tw、表面传热系数hw以及传热系数提升率的影响。