1，4二环己基取代六元瓜环与Na(Ⅰ)自组装实体的合成与晶体结构

A novel complex of a new 1,4-dicyclohexyl cucurbituril(DCYQ[6]) with sodium(Ⅰ) ion was synthesized, and the crystal structure was determined by X-ray diffraction technique. In this self-assembled entity both the cavity interaction of DCYQ[6] included a nitrate anion and the portal interaction of the dipole carbonyls of DCYQ[6] with sodium cations lead to form self assembled molecular capsules. The crystal structure of the entity shows a packing of the self assembled molecular capsules connected by hydrogen bonds of water molecules. CCDC: 271400.     

[CO(ptma)(amp)Cl]2+体系的一反式经式异构体(n3[ZnCl4]·0.5H2O)的晶体结构

在合成[Co(bpma)(tn)Cl]2+体系配合物的实验中,得到[Co(ptma)(amp)Cl]2+体系的一反式(ptma中仲胺上的氢相对于Cl)经式异构体(m3[ZnCl4]@0.5H2O),其中bpma=N,N′-二(2-吡啶基甲基)胺,tn=1,3丙二胺,ptma=N-(2-吡啶基甲基)丙二胺,amp=2-(氨基甲基)吡啶.此配合物异构体构型选择性形成的原因可能主要是其结构中配体间C-H…π相互作用使之更稳定的结果.利用单晶X-射线衍射法测定的晶体学参数:单斜晶系,空间群C2/c,a=1.55978(19)nm,b=1.33324(16)nm,c=2.2077(3)nm,β=94.832(3)°,V=4.5748(10)nm3,Dc=1.696g@cm-3,Z=8,F000=2360,μ(MoKa)=23.72cm-1,R=0.0475,Rw=0.1204.配合物离子中Co3+为六配位.晶胞中含8个配合物阳离子,8个[ZnCl4]2-阴离子及4个水分子,对映体的比例为1:1.     

基于SPCE061A单片机的髋作用力测试仪设计

介绍了基于SPCE061A单片机的髋作用力测试仪的系统结构及部分软件编写流程,着重分析了测试仪的测力方法以及使用光电编码器进行测速和鉴相的原理.测试仪以SPCE061A单片机为控制核心,配有串行通信口,具备上位机实时监控、数据保存和复现、测试数据离线分析等功能.实验证明,该测试仪具有测量准确、稳定性高及操控界面友好等优点.     

分形维数的多尺度形态估计与目标提取

本文研究了Minkowrki－Bouligand维数估计的数学形态学方法实现，给出了一种基于多尺度灰度形态运算的图像维数估计算法。将分形特征用于目标的检测，提出了一种具有较好稳健性的基于多分辨率分形特征的目标提取方法。     

光纤惯组的第二级温控系统算法设计与仿真

由于光纤惯性测量组合对温度的敏感性,故需采用温控系统对惯组的温度进行控制以保证温度敏感器件的精度和稳定性。为了获得更好的控制效果,本文采用两级温控方案,重点针对光纤惯性测量组合温控系统的第二级温控系统进行加热方案的论证,对光纤陀螺和加速度计进行热仿真分析,优化温度控制方案,并提出用遗传算法优化模糊PID控制器的量化因子和比例因子,由此优化控制规则和隶属度函数。仿真结果表明,这种算法能够获得比常规模糊PID控制更好的控制效果,大大改善了系统的性能。     

载银活性炭的制备与表征

在活性炭上负载银离子,制备具有抗菌性能的吸附材料载银活性炭.首先,优选了分散剂的种类为聚乙烯吡咯烷酮(PVP),得出PVP:银离子最佳质量比为1:1;其次,探讨了在不同碳化温度下改性活性炭载银量,未经碳化处理时载银量为17.09％,碳化温度为500℃时,载银量为18.24％;碳化温度800℃时,载银量增加到18.61％...     

基于TextRank算法的联合打分文本摘要生成

自动文本摘要生成是自然语言处理领域中颇具挑战性的问题之一,其任务是为书籍、篇章、新闻或者微博等某一文本资源生成简洁而又具有意义的文本摘要.TextRank算法是一种基于图的文本摘要生成算法,只利用当前文档即可实现关键词提取和文摘生成,因其简洁有效而得到广泛应用.本文在TextRank算法的基础上提出一个无监督抽取式联合...     

基于 RLWE 的全同态加密方案简

基于Kristin Lauter等人的somewhat同态方案,提出“带密钥转换的重线性化技术”。结合该技术与“模转换”,设计了一个基于RLWE的非自举的层次化全同态加密方案。该方案的同态操作简单,而且给出的平凡门操作使得电路层结构更清晰。最后利用自举技术作为优化提升了方案的同态运算能力。     

Efficient and stable wireless power transfer based on the non-Hermitian physics

As one of the most attractive non-radiative power transfer mechanisms without cables,efficient magnetic resonance wireless power transfer(WPT)in the near field has been extensively developed in recent years,and promoted a variety of practical applications,such as mobile phones,medical implant devices and electric vehicles.However,the physical mechanism behind some key limitations of the resonance WPT,such as frequency splitting and size-dependent efficiency,is not very clear under the widely used circuit model.Here,we review the recently developed efficient and stable resonance WPT based on non-Hermitian physics,which starts from a completely different avenue(utilizing loss and gain)to introduce novel functionalities to the resonance WPT.From the perspective of non-Hermitian photonics,the coherent and incoherent effects compete and coexist in the WPT system,and the weak stable of energy transfer mainly comes from the broken phase associated with the phase transition of parity-time symmetry.Based on this basic physical framework,some optimization schemes are proposed,including using nonlinear effect,using bound states in the continuum,or resorting to the system with high-order parity-time symmetry.Moreover,the combination of non-Hermitian physics and topological photonics in multi-coil system also provides a versatile platform for long-range robust WPT with topological protection.Therefore,the non-Hermitian physics can not only exactly predict the main results of current WPT systems,but also provide new ways to solve the difficulties of previous designs.     

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.