Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

均匀分层介质中标准矢量波函数的构成

研究了在均匀分层介质中构成标准矢量波函数的必要条件。研究结果表明在均匀分层介质中构成标准矢量波函数一般需遵循Morse-Feshbach判据外，领示矢量只能选取与折射率变化方向一致的那根坐标轴单位矢量。但在某些特定的条件下，对领示矢量的选取条件可以放宽为只需遵循Morse-Feshbach判据即可。     

激光与DNA作用系统的随机共振研究

建立了激光与ＤＮＡ分子系统相互作用的Ｆｏｋｋｅｒ－Ｐｌａｎｃｋ方程，通过对该方程的数值研究，发现在绝热近似下，系统发生随机共振，噪声强度，激光振幅和频率协同作用共同制约着生物系统的演化过程，噪声强度在生物系统遗传变异过程中可能起重要作用。     

等径管道的三维重建

由轮廓线重建物体的现有方法，不能准确地恢复原有管道的形状．本文提出了一种等径管道的三维重建方法，能较为准确地恢复原管道的三维结构．     

影响碲镉汞晶体电子迁移率的主要因素

通过把迁移率的实测值与影响ＨｇＣｄＴｅ晶体电子迁移率的主要散射机构进行对比，得出结论：位错是ＨｇＣｄＴｅ晶体低温电子迁移率降低的主要原因。     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

PROFILE MINIMIZATION PROBLEM FOR MATRICES AND GRAPHS

ＰＲＯＦＩＬＥＭＩＮＩＭＩＺＡＴＩＯＮＰＲＯＢＬＥＭＦＯＲＭＡＴＲＩＣＥＳＡＮＤＧＲＡＰＨＳＬＩＮＹＩＸＵＮ（林詒勋）；ＹＵＡＮＪＩＮＪＩＡＮＧ（原晋江）（ＤｅｐａｒｔｍｅｎｔｏｆＭａｔｈｅｍａｔｉｃｓ，ＺｈｅｎｇｚｈｏｕＵｎｉｖｅｒｓｉｔｙ，Ｚｈｅ...     

BBO晶体拉曼光谱的高温特性研究

ＢＢＯ晶体拉曼光谱的高温特性研究李郁陈凯旋尤静林蒋国昌（上海大学上海２０１８００）洪慧聪路治平仲维卓（中科院上海硅酸盐研究所上海２０００５０）ＨｉｇｈＴｅｍｐｅｒａｔｕｒｅＲａｍａｎＳｔｕｄｙｏｆＢＢＯＣｒｙｓｔａｌＬｉＹｕ，ＣｈｅｎＫａｉｘｕａｎ...