Error Detecting Dual Basis Bit Parallel Systolic Multiplication Architecture over GF（2^m）

An error tolerant hardware efficient verylarge scale integration （VLSI） architecture for bitparallel systolic multiplication over dual base, which canbe pipelined, is presented. Since this architecture has thefeatures of regularity, modularity and unidirectionaldata flow, this structure is well suited to VLSIimplementations. The length of the largest delay pathand area of this architecture are less compared to the bitparallel systolic multiplication architectures reportedearlier. The architecture is implemented using Austria Micro System＇s 0.35 μm CMOS （complementary metaloxide semiconductor） technology. This architecture canalso operate over both the dual-base and polynomialbase.     

CuPc based organic--inorganic hetero-junction with Au electrodes

In present work, a hetero-junction of n-silicon (n-Si) with copper phthalocyanine (CuPc) has been fabricated. The current-voltage characteristics were investigated to explain the rectification and conduction mechanism. The effect of temperature and humidity on electrical properties of n-Si/CuPc hetero-junction has also been investigated. The characteristics of the junction have been observed to be temperature and humidity dependent so it is suggested that this junction can be used as temperature and humidity sensor.     

A Neural Network Method for Traffic Dispersion

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Optical and structural properties of sol-gel derived nanostructured CeO_2 film

Sol-gel derived nanostructured CeO2 film was deposited on glass substrate using the dip-coating technique with annealed at 650oC. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR), UV/VIS and photoluminescence (PL) spectroscopy studies were employed to analyze the structural and optical properties of the sol-gel derived nanostructured CeO2 film. The average crystallite size was estimated from XRD pattern using Scherrer equation as about 3–4 nm. SEM micrograph shows the film have good adherence to the substrate, porous in nature and crack free. The UV-visible absorption spectroscopic measurement results showed that the products had conspicuous quantum size effects. The absorption spectrum indicates that the sol-gel derived nanostructured CeO2 film have a direct bandgap of 3.23 eV and the photoluminescence spectra of the film show strong band at 378 nm may have promising applications as optoelectronic materials.     

Fast Frequency Offset Acquisition and Accurate Tracking in OFDM Systems

1　IntroductionOrthogonalFrequencyDivisionMultiplexing(OFDM )isaneffectivetransmissionschemetocombatmultipathfading[1～ 2 ,1 7] .Byinsertingaguardintervalbetweensymbolblockscalledcyclicprefix,theInter SymbolInterference (ISI)canbemitigated .OFDMisadoptedasthemodulationschemeforaDigitalAudioBroadcasting (DAB)sys tem[3] andAsymmetryDigitalSubscriberLoop(ADSL) [4] andisalso proposedastheterrestrialHDTVtransportinEurope[5] .OFDMsystemisverysensitivetocarrierfre quencyoffset.Manymet…     

LiTaO_3晶体中铁电畴界的高分辨点阵象的研究

铁电材料的高分辨点阵象与非铁电材料相比较,在实验上具有特殊的困难。由于电荷效应,试样在电子束照射下很不稳定,特别是对畴界密度较高的晶体。铁电畴界引起的局部地区电场梯度急剧变化,欲完全纠正物镜象散则相当困难。本文报导了LiTaO_3 [100]投影(即(?)或称X切割)的高分辨(2.7(?))点阵象。同时对完整晶体结构进行电子计算机计算象的模拟,并和实验观察的结果对比,象的符合程度是令人满意的。运用Ta和Li离子在结构模型中的位置构成的Ta.Li网络,定性地描述了点阵条纹的特征。并用暗场(移动光描法)和高分辨显微术相结合,定点定位地观察了LiTaO_3中180°铁电畴界。为180°位移型铁电畴界的结构和宽度,首次提供了原子尺寸范围的直接信息。依据结晶学关系,系统地分析了180°铁电畴结构的六种可能性。比较了高分辨点阵象和电子计算机模拟象,从而确定了180°畴界的结构。结果表明:极化矢量的反转是由于Li离子沿Z轴方向移到邻近的空氧八面体中,移动量为1/6C+R,R为一修正量。实验和结构模型均表明LiTaO_3中180°铁电畴界的宽度为零。     

用PCl_3/In/H_2技术控制汽相外延高纯磷化铟的最新进展

PCl_3/In/H_2的最新工作是揭示PCl_3克分子分数和质量输运效应对外延生长速度和净掺杂影响的互变关系。介绍了用改进了的比早期AsCl_3/Ga/H_2工艺更为适用的技术所进行的高纯磷化铟的汽相外延生长及其控制。叙述了净杂质浓度在10~(13)厘米~(-3)范围和霍尔迁移率超过10~5厘米~2·伏~(-1)·秒~(-1)的高纯外延层的生长。还将讨论用PCl_3克分子分数和质量输运依赖关系控制本底掺杂的方法。指出深施主和浅受主补偿效应的有关数据。讨论故意掺入超过10~(15)～10~(18)范围的浅施主和受主的情况。进行了详细的肖特基势垒测量并与理论相比较。给出金和铝肖特基势垒的内建势关系。指出了77K时的光荧光测量以及它们和外延层纯度的关系。把10~(13)～10~(18)厘米~(-3)范围内净载流子浓度与300K和77K时范德堡霍尔迁移率的关系与理论进行比较。为表示浅施主和受主浓度,根据理论数据对补偿比效应进行了估计。     

Pilot Based Channel Estimation in IEEE 802 16a OFDM System

1　Introdution　IEEE 802 16[1] is a specification for fixed broadbandwireless Metropolitan Access Networks (MAN). The stan dard is expected to bring low cost and more bandwidth prod ucts for broadband wireless access in the next years. Thisstandard specifies the physical (PHY) and Medium AccessControl layer (MAC) of the air interface of interoperablepoint to multipoint and optional Mesh topology broadbandwireless access system. The specification enables access todata, …     

热释电探测器达到背景限性能的可能性

本文比较了TGS、LiTaO_3、硼酸盐和其他热释电探测器的琼逊噪声与背景噪声的大小,可以看到,在角频率为探测灵敏元的热时间常数的倒数时,琼逊噪声出现最小值,对有些材料,该最小值可能比背景噪声小得多。本文还讨论了利用这一特性来制作实际探测器的有关问题。需要一种与优良的低噪声放大器配合,具有最小热容的元件,但是由于采用制作电子材料的现代技术有可能制备出比现在一般使用的要好得多的电子器件,因而元件在低频下的性能接近于背景限。     

The investigation of electrodeposited Cu2O/ITO layers by chronocoulometry process: effect of electrical potential

The thin films of Cu₂O are deposited by electrodeposition technique onto indium tin oxide (ITO)-coated glass substrate at different potentials. The precursor is an aqueous solution which contains respectively 0.05 M of CuSO₄ and citric acid at kept temperature of 60℃ and the applied potential varies within the {-0.4 V,-0.7 V} SCE range. Based on the chronocoulometry (CC) process, the electrochemical, structural and optical parameters are determined. We measured the current as function of potential within the {-0.4 V,-0.7 V} range and the higher current is found to be within the {-0.7 V,-0.3 V} band. The grain sizes are of 12.12 nm and 35.47 nm according to (110) and (221) orientations respectively. The high textural coefficient of 0.943 is recorded for the potential-0.7 V. The transmittance of 72.25 %, within the visible band, is obtained for the as-grown layer at-0.4 V and the band gap is found to be 2.2 eV for the electrodeposition potential of-0.7 V.