The interaction of in-band and in-gap lattice soliton trains in optically induced two-dimensional photonic lattices

We demonstrate the coherent interactions of lattice soliton trains,including in-band solitons (IBSs) and gap soliton trains (GSTs),in optically induced two-dimensional photonic lattices with self-defocusing nonlinearity.It is revealed that the π-staggered phase structures of the lattice soliton trains will lead to anomalous interactions.Solely by changing their initial separations,the transition between attractive and repulsive interaction forces or reversion of the energy transfer can be obtained.The 'negative refraction' effect of the soliton trains on the interaction is also discussed.Moreover,two interacting IBSs can merge into one GST when attraction or energy transfer happens.     

Trends in ultrashort and ultrahigh power laser pulses based on optical parametric chirped pulse amplification

Since the proof-of-principle demonstration of optical parametric amplification to efficiently amplify chirped laser pulses in 1992,optical parametric chirped pulse amplification(OPCPA)became the most promising method for the amplification of broadband optical pulses.In the meantime,we are witnessing an exciting progress in the development of powerful and ultrashort pulse laser systems that employ chirped pulse parametric amplifiers.The output power and pulse duration of these systems have ranged from a few gigawatts to hundreds of terawatts with a potential of tens of petawatts power level.Meanwhile,the output pulse duration based on optical parametric amplification has entered the range of fewoptical-cycle field.In this paper,we overview the basic principles,trends in development,and current state of the ultrashort and laser systems based on OPCPA,respectively.     

XRD粉末衍射法研究微波场作用下4A分子筛的合成

在微波场作用下合成了粒度均匀、白度和钙离子交换容量高、性能优异的4A分子筛。用XRD粉末衍射法研究了硅铝比、水钠比、微波功率和微波加热时间对微波合成4A分子筛的影响,找出了在微波场作用下合成4A分子筛的最佳条件,并用IR, SEM和DSC等方法对合成的产物进行了表征。     

一种基于滤波器组的自适应门限窄带干扰抑制方法

针对直接序列扩频(DSSS)通信中的强窄带干扰,提出了一种基于重叠变换滤波器组的自适应门限窄带干扰抑制技术.该技术根据接收信号经过滤波器组后的统计特性,确定窄带干扰与扩频信号之间的阈值.通过降低高于阈值的子带信号的强度,降低了处理后的信号中的干扰能量,使接收信号的信噪比大大提高.     

Graphene integrated photodetectors and opto-electronic devices — a review

Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation,high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics. We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.     

Coherent Scattering of Light by Bose-Einstein Condensation in a Tight Confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate （BEC） ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

压力对热声驱动脉管制冷机性能的影响

讨论了充气压力对热声压缩机的起振温度等性能的影响 ,着重研究了工作压力对热声驱动脉管制冷机性能的影响。对自行研制的驻波型热声驱动脉管制冷机进行了改进和优化 ,在最近的实验中取得了 1 2 0 K的无负荷最低制冷温度 ,达到液化天然气温区。     

低于13K的单级脉管制冷机性能研究

回热器是脉管制冷机的关键部件之一,其效率对脉管制冷机性能有很大影响。铅丸是常见的蓄冷材料,通常用于回热器的低温端。本文测试和分析了不同品质的国产铅丸和进口铅丸对单级G-M型脉管制冷机性能的影响。采用额定功率为6．0 kW的压缩机驱动,使用进口铅丸脉管制冷机最低制冷温度达12．9 K,这是当前单级脉管制冷机达到的最低制冷温度;40 K时的最大制冷量为57．4 W。使用国产铅丸最低制冷温度为13．6 K,40 K时的最大制冷量为55．9 W。本文对低温制冷机蓄冷材料选择具有一定的参考价值。