Fe和Co元素在铁磁性形状记忆合金Mn50Ni25－xFe(Co)xGa25中的作用

为了进一步改善材料的性能和探索新的材料，将Mn₂NiGa合金中的Ni元素分别用Fe和Co替代，制备了Mn₅₀Ni_25-xFe(Co)_xGa₂₅系列合金. 研究了Fe和Co元素对Mn₂NiGa合金的结构、马氏体相变行为、磁性和机械性能等方面的影响. 关键词： 铁磁形状记忆合金 Heusler合金 50Ni_25-xFe(Co)_xGa₂₅')" href="#">Mn₅₀Ni_25-xFe(Co)_xGa₂₅     

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer(IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells(MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth.It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.     

可见/近红外土壤湿度的光谱偏振特性实验研究

为探讨在更多波段上开展基于光偏振特性土壤湿度检测的可行性,采用自行搭建的光学系统,在可见/近红外波段上开展土壤湿度与反射光偏振特性的实验研究。研究结果表明:在600~800 nm波段,土壤湿度与反射光偏振度具有相关性,其中当14%土壤湿度30% 时,反射光偏振度与土壤湿度具有良好的线性关系。对实测数据进行回归分析,结果显示线性模型平均标准差小于3%,优于参考文献[5]中近红外光谱特征方法10%的误差结果,说明在该波段范围,采用测量光偏振态进行土壤湿度检测的方法具有可行性,为大范围土壤含水量的偏振遥感探测提供科学依据。     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

InAlN材料表面态性质研究

运用电流-电压(I-V), 变频电容-电压(C-V)和原子力显微镜 (AFM) 技术研究In组分分别为15%, 17%和21%的Ni/Au/-InAlN肖特基二极管InAlN 样品表面态性质 (表面态密度、时间常数和相对于InAlN 导带底的能级位置). I-V和变频 C-V方法测量得到的实验结果表明, 随着In组分增加, 肖特基势垒高度逐渐降低, 表面态密度依次增加. 变频 C-V特性还表明,随着测试频率降低, C-V曲线有序地朝正电压方向移动, 该趋势随着In组分的增加而变得更加明显, 这可能归结于InAlN表面态的空穴发射. AFM表面形貌研究揭示InAlN 表面粗糙度增加可能是表面态密度增加的主要原因. 关键词： 不同In组分的InAlN材料 表面态 电流-电压特性 变频电容-电压特性     

Different temperature dependence of carrier transport properties between AlxGal-xN/InyGal-yN/GaN and Alx Gal-xN/GaN heterostruct ures

The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

氮化镓异质结高能电子辐照的电子背散射衍射研究

利用2MeV电子辐照氮化镓(GaN)异质结,辐照剂量分别为1×1015/cm2和5×1015/cm2.电子背散射衍射(EBSD)菊池图的图像质量IQ值随辐照剂量的增加而增大,对应的表层应变或畸变减小.扫描电镜能谱(SEM/EDS)分析发现氧原子在外延层心部发生富集,表明高能电子辐照在GaN外延层内引入晶格损伤.表层应变...     

DFT方法研究木质素单体及二聚体的结构与拉曼光谱

木质素是自然界中第二丰富的天然聚合物,广泛存在于各种陆地植物的木质部中,利用木质素拉曼光谱对植物种类进行快速无损鉴别具有重要的应用价值。但由于木质素大分子构型非常复杂,对其拉曼特征光谱的仿真研究一直存在困难。利用Gaussian16W中包含的B3LYP密度泛函方法结合6-311G(d, p)基组,构建出三种木质素单体及其三种同种木质素单体构成的二聚体以及三种异种木质素单体构成的二聚体,提出了一种利用木质素的三种基本结构单体及其二聚体仿真分析木质素大分子拉曼光谱特征的方法。首先计算了三种单体的基本构型、轨道能级和电子空间分布,并分析了三种木质素单体拉曼光谱和振动模式的特点。随后利用不同组合方式的β-O-4二聚体的光谱谱峰特征,解释了特征谱峰信号位置漂移的成因,提出了判断木质素大分子信号特征的主要依据。研究结果表明,1 712 cm^-1谱峰信号最强且位置稳定,振动归属为碳碳双键伸缩振动,该振动归属引起的特征峰可以作为木质素大分子最主要的信号特征;1 642 cm^-1谱峰信号振动归属为芳香环骨架振动,仅受芳香环甲基数量影响产生劈裂,该振动归属引起的...     

Ⅱ-Ⅵ族化合物原子间两体势的第一性原理研究

本文采用基于第一性原理的Hartree-Fork (HF)方法和密度泛函理论(DFT)计算了CdS、CdSe、CdTe、HgTe等Ⅱ-Ⅵ族化合物的两体相互作用势,并与实验数据进行了比较.分析了计算中基组对计算结果的影响,以及各种近似方法的优缺点.采用Lennard-Jones势、Born-Mayer势和Morse势函数分别对势能值进行拟合,结果表明采用Morse势拟合的势能曲线与计算结果符合最好,说明普遍应用于共价分子的Morse势也同样适用于对Ⅱ-Ⅵ族二聚体的两体势描述.     

基于偏振时域特性的海面耀光抑制方法

耀光是太阳光入射到海面上由海面镜面反射而成,其较高的辐射强度会造成传感器像元饱和,使得海面目标轮廓淹没在耀光中,对目标探测造成影响.基于耀光的偏振时域特性,提出一种耀光抑制方法.该方法利用实时偏振成像系统对有耀光的海面进行实时偏振测量,同时获取0°、45°、90°三个偏振方向的偏振视频图像信息;根据不同偏振方向视频对应...