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341.
用金属有机物化学气相沉积技术(MOCVD)在半绝缘4H-和6H-SiC衬底上研制出了高性能的具有国内领先和国际先进水平的AlGaN/GaN高电子迁移率晶体管(HEMT)材料,室温二维电子气迁移率和浓度分别为2215cm2/(V·s)和1.044×1013cm-2;50mm外延片平均方块电阻不高于253.7Ω/□,方块电阻不均匀性小于2.02%;三晶X射线衍射和原子力显微镜分析表明该材料具有较高的晶体质量和表面质量.用以上材料研制出了1mm栅宽AlGaN/GaN HEMT功率器件,8GHz连续波输入下器件的输出功率密度为8.25W/mm,功率附加效率为39.4%;对研制的器件进行了可靠性测试,器件连续工作半小时后,输出功率只下降了0.1dBm,表明所研制的器件具备了一定的可靠性. 相似文献
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343.
Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy 下载免费PDF全文
ZnO films prepared at different temperatures and annealed at 900^o C in oxygen are studied by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The 0 ls XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (Oi) before annealing and the quenching of the Vo after annealing. By combining the two results it is deduced that the GL and YL are related to the Vo and Oi defects, respectively. 相似文献
344.
Photovoltaic and Electroluminescence Characters in Hybrid ZnO and Conjugated Polymer Bulk Heterojunction Devices 下载免费PDF全文
We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3′, 7′-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV) bulk heterojunction photovoltaic cells. Photoluminescence quenching experimental results indicate that the ultrafast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity a bout 1.2 e V greater than that of MDMO-PP V. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electrolumi- nescence action due to the fact that the back transfer effect can be observed in the ZnO:MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO:MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character. 相似文献
345.
High-power operation of uncoated 22μm-wide quantum cascade lasers (QCLs) emitting at λ~ 4.8μm is reported. The emitting region of the QCL structure consists of a 30-period strain-compensated Ino.68 Gao.32 As/In0.37 Alo.63 As superlattice. For a 4-mm-long laser in pulsed mode, a peak output power is achieved in excess of 2240mW per facet at 81K with a threshold current density of 0.64 kA/cm^2. The effects of varying the cavity lengths from 1 to 4 mm on the performances of the QCLs are analysed in detail and the low waveguide loss of only about 1.4 cm^-1 is extracted. 相似文献
346.
Lateral Schottky barrier diodes (SBDs) on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2. 相似文献
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348.
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 下载免费PDF全文
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device. 相似文献
349.
High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 下载免费PDF全文
We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices. 相似文献
350.