立方非线性Schr?dinger方程的Weierstrass椭圆函数周期解

利用Weierstrass椭圆函数展开法对非线性光学、等离子体物理等许多系统中出现的立方非线性 Schr(o)dinger方程进行了研究.首先通过行波变换将方程化为一个常微分方程,再利用Weierstrass椭圆函数展开法思想将其化为一组超定代数方程组,通过解超定方程组,求得了含Weierstrass椭圆函数的周期解,以及对应的Jacobi椭圆函数解和极限情况下退化的孤波解.该方法有以下两个特点:一是可以借助数学软件Mathematica自动地完成;二是可以用于求解其它的非线性演化方程(方程组).     

基于基团贡献法的HFC＋HC混合物气液相平衡性质预测

基于基团贡献法的思想,本文采用改进的SRK状态方程和修正的MHV1混合规则,将UNIFAC基团贡献法扩展用于HFC HC二元混合物气液相平衡性质的描述,给出了基团划分表和基团间的相互作用参数,使用该方法可以较好地再现HFC HC二元混合物的气液相平衡性质,并且具有良好的预测效果.     

HIRFL-CSRm内靶实验终端CsI(Tl)电磁量能器性能模拟

基于GEANT4模拟了HIRFL CSRm内靶实验终端的CsI(Tl)电磁量能器系统,给出了CsI电磁量能器的最佳设计参数及可能达到的性能.结果表明,设计的CsI(Tl)电磁量能器系统能够满足所研究的物理要求. Based on the GEANT4, the performance of the electromagnetic calorimeter (EMC) of the internal-target detector at HIRFL-CSRm is simulated. The simulation results show that 1.5%—3% of the energy resolution σ_E/E and 2° of the polar angular resolution σ_θ can be obtained. The invariant mass of the π~0 decay can be reconstructed well. The performance can meet the requirement of studying the proposed physics at HIRFL-CSRm.     

流动注射抑制化学发光法测定痕量强力霉素

基于在NaOH介质中 ,强力霉素对Luminol KMnO4 体系发光反应具有强烈的抑制作用 ,建立起流动注射抑制化学发光测定痕量强力霉素的新方法。强力霉素在 0 0 0 5～ 5 0 μg·mL- 1 浓度范围内 ,采用不同的KMnO4 溶液浓度 ,分段建立起抑制化学发光强度与其浓度间良好的线性关系 ,方法的检出限为 2 0×10 - 3μg·mL- 1 。该方法可用于药片中强力霉素含量的测定     

Pb-Mg-Al合金腐蚀机理的电子理论研究

为了了解Pb-Mg-Al合金腐蚀的物理本质, 本文采用基于第一性原理的赝势平面波方法系统地计算了Pb-Mg-Al合金中各物相的结合能、费米能级和局域态密度等电子结构参数, 分析了合金的电化学腐蚀机理. 计算结果表明：Pb-Mg-Al合金中各主要组成物相稳定性大小关系为 Mg₁₇Al₁₂>Mg₂Pb>Mg;Mg,Mg₂Pb和Mg₁₇Al₁₂的费米能级存在E_f(Mg)>E_f(Mg₂Pb)>E_f(Mg₁₇Al₁₂)的关系, 说明Mg最容易失去电子, Mg₂Pb次之, Mg₁₇Al₁₂最难;局域态密度表明, 在同样的外界条件下, 体系中Mg相和Mg₂Pb相对于Mg₁₇Al₁₂均处于不稳定的状态, 容易失去电子, 即容易发生腐蚀. Pb-Mg-Al合金体系中不同物相的费米能级差构成了电化学腐蚀的电动势, 导致电子从费米能级高的Mg相和Mg₂Pb相流向费米能级低的Mg₁₇Al₁₂相, 使Pb-Mg-Al合金发生腐蚀.     

可变增益放大器在脉冲振幅调制式藻类光合活性荧光测量中的应用

微弱信号探测中信号幅度很宽会导致幅度小的信号分辨率低,结合脉冲振幅调制叶绿素光合活性荧光仪中不同强度光源激发下光电倍增管光电流响应,采用多路选择开关D5201G芯片选择I/V转换电路中不同阻值的反馈电阻实现了对输入信号可变增益放大.0～118mV以下输入信号的理论增益值最高可达28.25 dB,同时输入信号的电压幅值最...     

New Power Lateral Double Diffused Metal-Oxide-Semiconductor Transistor with a Folded Accumulation Layer

A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is proposed to improve the performance of the breakdown voltage and specific on-resistance. Three kinds of technologies, which are the additional electric field modulation effect, majority carrier accumulation and increasing the effective conduction area, are applied simultaneously by a semi- insulating polycrystalline silicon layer deposited over the top of thin oxide covering the drift region. It is indicated that by the simulator, the ideal silicon limits of the breakdown voltage and specific on-resistance have been broken due to the complete three-dimensional reduced surface field effect and the doubled majority carrier accumulation layer.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Spatial heterogeneity in liquid–liquid phase transition

Molecular dynamics simulations are performed to investigate the liquid–liquid phase transition(LLPT) and the spatial heterogeneity in Al–Pb monotectic alloys. The results reveal that homogeneous liquid Al–Pb alloy undergoes an LLPT,separating into Al-rich and Pb-rich domains, which is quite different from the isocompositional liquid water with a transition between low-density liquid(LDL) and high-density liquid(HDL). With spatial heterogeneity becoming large, LLPT takes place correspondingly. The relationship between the cooling rate, relaxation temperature and percentage of Al and the spatial heterogeneity is also reported. This study may throw light on the relationship between the structure heterogeneity and LLPT, which provides novel strategies to control the microstructures in the fabrication of the material with high performance.     

具有部分超结的新型SiC SBD特性分析

提出了一种具有部分超结（super junction, SJ）结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(V_B)和比导通电阻(R_on-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2< 关键词： SiC肖特基二极管 super junction 导通电阻 击穿电压