Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

双层加筋板低频声的隔离与有源控制

为探讨加筋对双层结构低频隔声及有源控制的影响,分析了筋条数目及布放位置对双层加筋结构低频隔声性能、有源控制策略选取及有源隔声性能的影响。首先利用模态叠加与声-振耦合理论对双层加筋结构建模,然后采用数值算例对上述问题展开探讨。研究发现,筋条数目增多或筋条靠近基板的中间位置布放,将有利于双层加筋结构低频隔声性能的提高。对于有源控制措施,声控制策略与力控制策略相比,前者的控制效率较高且降噪效果较好。由于筋复杂的耦合影响,添加多条筋或筋条靠基板中间布置时有源控制效果减弱,需施加多个点源才能获得较好的降噪效果。      

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

基于RS485总线的面粉厂集散控制系统

概述了面粉厂的基本状况及技术要求，详细介绍了面粉厂控制系统的控制方案及设计方法。给出了基于RS485总线集散控制系统的硬件配置和软件设计。系统实际应用表明，该方法为实现低成本的网络控制系统提供了一个实例。     

雷达导引头目标跟踪系统次优控制问题研究

常规雷达导引头是通过位标器输出目标视线角速度,对机构实现有着极高的要求．本文提出在雷达导引头设计中利用分离原理把最优跟踪问题分解为最优滤波和最优控制问题,在数据处理中实现最优滤波,而位标器仅用于指向跟踪,从而降低了对位标器机构的指标要求,并提高了跟踪精度。最后利用数值仿真验证了理论的正确性。     

多组元全动型变焦物镜设计

为了寻找求解多组元全动型变焦系统更加简单而有效的方法,采用程序法的形式,通过给定初始参数(各组元倍率、间隔),对目标系统进行初始数据计算;然后通过给定其限制条件(正切差、变焦曲线曲率、视场角和系统总长)作为控制指令对数据进行优化;最终给出满足条件的光焦度分配,并计算出系统各组元数据参数。为了验证该方法的可行性,以四组元全动型变焦物镜为例,计算出了满足条件的系统参数,通过程序给出的初始数据在光学设计软件Zemax上完成光学系统仿真设计。将程序给出的光焦度分配与Zemax给出的焦距结果进行了对比,结果表明两者数据非常接近,从而证实了该方法的可行性。     

霍尔传感元器件及其应用(5)

霍尔器件是一种基于霍尔效应的磁传感器,已发展成一个品种多样的磁传感器产品族,并已得到广泛的应用.本文简要介绍其工作原理、产品特性及其典型应用.     

Result of search for low velocity exotic particles

The L3＋C experiment, taking advantage of the L3 muon magnetic spectrometer, measured the spatial tracks of charged cosmic ray particles to obtain rigidity as well as velocity. One possible low velocity exotic particle is observed. The existing uncertainties are discussed, and the flux upper limit of the low velocity exotic particles from this observation is deduced based on the assumption of a null observation. The result is 6.2×10^-10 cm^-2·s^-1·sr^-1 at 90% confidence level in the velocity range from 0.04c to 0.5c.     

基于多尺度分析矩特征的人脸表情识别

Zernike不变矩具有对噪声不敏感,正交等特性,是表情的有效表征方法,高阶Zernike矩包含更多图像信息,对表情分类的作用更大.但是高阶矩的计算复杂度很大,很难达到快速表情识别的要求.本文利用小波变换对表情图像进行多尺度分析,从低频子图像中计算其Zernike矩作为判别特征进行表情识别.通过小波变换,一方面可以对图像降维,降低计算复杂度;另一方面,小波变换的去噪性能使得识别效果更好.实验表明,基于多尺度分析Zernike矩特征的方法优于单独使用小波变换或Zernike矩特征方法的识别效果.     

一种新型红外多波段低背景探测技术

红外低背景探测技术主要应用在深空环境,系统灵敏度与自身背景辐射关系较大,如何有效抑制探测系统自身背景辐射一直是重点研究方向;识别一直是红外领域的研究热点,增加探测谱段是提高特征获取量的最有效方式。介绍了一种局部制冷分光的红外多波段探测技术,该技术采用探测器一体化设计思路,将折反结构光学系统局部集成到探测器内部随红外芯片一起制冷;再利用分光元件进行双路分光,实现双波段能力,如果结合叠层芯片可以有效拓展到多波段能力;通过光学自辐射仿真,比较不同光学结构形式下的自辐射结果,可以看出:该技术背景辐射降低至常温折反系统背景辐射1/4,理论灵敏度可以大幅度提高,该技术优势明显,潜力巨大。