提高八端口网络确定微波相位差精度的新算法

应用八端口网络技术能对各端口进行微波功率测量,通过计算方便地得到两路微波相位差。由于功率测量结果必定存在偶然误差,会导致微波相位差测量结果不精确。本文提出一种实用的算法,能在同等微波功率测量误差条件下,大大减少微波相位差的误差。通过计算机模拟计算,表明新算法的微波相位差测量结果的均方根误差,近似只有平均算法的1 /5。     

磁能活性水的生物效应研究

我们用动物实验研究了磁处理的磁能活化水的生物效应．这个磁能活化水是用4400Gs的磁场处理后得到的．在磁能活化水对高血脂Wister大鼠的血常规指标、血液流变学指标、血液生化指标、肝组织中有关自由基代谢的生化指标以及老鼠的脾脏系数的影响的研究中发现，在高脂饲料的喂养下实验组大鼠的胆固醇含量明显低于对照组大鼠，同时实验组大鼠的体重增重也明显小于对照组大鼠，说明磁能活化水有一定的降血脂的能力．同时，在血液流变学的指标测定中看出实验组大鼠的高切粘度明显低于对照组的，说明饮用磁能活化水的大鼠的红细胞变形性要好于饮用普通水的大鼠．     

摄录像设备如何转向数字化

随着当前数字技术的迅猛发展，视音频设备的数字化趋向已势不可挡，然而又由于数字格式的不统一，市场的主流格式尚未形成，尤如春秋战国，厂商之间的竞争异常激烈，商业利益的趋使，各厂家都把自己的产品宣传得非常完美，性能如何优异、价格如何合理等等。作为设备的直接使用单位，我们觉得有必要对当前几大公司推向市场的数字摄录设备作一个较为公允、客观的比较和分析，然后结合本台的具体人力、财力、物力情况来综合评判今后的选项、发展方向。1确定大方向目前中国市场的数字化录像机基本上是由日本的三家公司推出的：即SONY公司、松…     

Laser Diode-Pumped Nd：LuVO4 Acousto-Optic Q-Switched Laser at 916 nm

A compact laser diode-pumped solid-state Nd：LuVO4 acousto-optic Q-switched laser is demonstrated at 916 nm of a quasi-three level for the first time. A pulse width of 130ns is observed when the pulse-repetition frequency is 10 kHz. The laser experiment shows that the Nd：Lu VO4 crystal can be used for efficient diode-pumped Q-switched lasers.     

通信仪器仿真实验室设计与实现

介绍了通信仪器仿真实验室的软、硬件开发与运行平台的选择，以及在Ｗｉｎｄｏｗｓ环境下应用程序的设计和实现过程。讨论了应用程序间的通信过程及实现方式，并简述了管理程序的设计。最后也指出了在软件设计上有待改进的地方。     

Dynamic analysis of V-folded cavity for TEM_(00) operation of end-pumped solid-state laser

Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEMoo operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.     

Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering

TiO2-xNx thin films are deposited onto Si（100） and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N （396 eV） is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV （for pure TiO2 film deposited by the same rf sputtering system） to 2.3 eV, which is verified by the optical-absorption spectra.