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101.
Scattering behaviours to the two-dimensional electron gasinduced by the Al composition fluctuation in AlxGa1-xNbarrier in AlxGa1-xN/GaN heterostructures 下载免费PDF全文
<正>This paper reports that cathodoluminescence(CL) measurements have been done to study the alloy fluctuation of the Al0.3Ga0.7N layer in Al0.3Ga0.7N/GaN heterostructures.The CL images and linescanning results demonstrate the existence of compositional fluctuation of Al in the Al0.3Ga0.7N barrier.A model using aδ-shape perturbation Hamilton function has been proposed to simulate the scattering probability of the two dimensional electron gases (2DEG) induced by Al composition fluctuation.Two factors,including conduction band fluctuation and polarization electric field variation,induced by the Al composition fluctuation have been taken into account.The scattering relaxation time induced by both factors has been estimated to be 0.31 ns and 0.0078 ns,respectively,indicating that the variation of the piezoelectric field is dominant in the scattering of the 2DEG induced by Al fluctuation. 相似文献
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通过优化Mg流晕增强了MoCVD生长的GaN薄膜的p型电导并改善了晶体质量.Hall测量结果表明卒穴浓度首先随着Mg流量的升高而升高,达到极大值后开始降低;迁移率始终随Mg流量的升高而降低.最优的样品在室温下空穴浓度达到4.1×1017cm-3,电阻率降至1Ω·cm.考虑施主型缺陷MGaVN的自补偿作用,计算了空穴浓度随掺杂浓度变化的曲线关系.计算结果表明自补偿系数随掺杂浓度的增大而增大;空穴浓度首先随掺杂浓度的增大而增加,存受主浓度为NA≈4×1019左右时达到极大值,之后随着掺杂浓度的增大而迅速降低.XRD数据表明在实验范围内晶体缺陷密度随着掺杂浓度的降低而降低. 相似文献
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MOCVD侧向外延GaN的结构特性 总被引:1,自引:1,他引:0
侧向外延(EL0)GaN的原子力显微镜(AFM)表面形貌图像表明,ELO—GaN相当平整,而掩膜区中央有线状分布的小丘群,这是由ELO—GaN在掩膜区中央接合时晶向不一致而产生的缺陷造成的。观察ELO—GaN扫描电子显微镜(SEM)截面图,侧向接合处存在着三角空洞,并且侧向接合导致上述小丘群。X射线衍射(XRD)曲线表明,掩膜边界处的GaN晶面有倾斜。拉曼散射谱表明,掩膜区GaN质量相对于窗口区大为提高。ELO—GaN和普通外延GaN的拉曼散射谱比较表明,ELO—GaN中的应力较小,晶体质量较高。 相似文献
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本文介绍了一种大型三基色霓虹灯点阵式显示屏系统的硬件及软件设计方法。该系统结构简单、易于扩展、工作稳定可靠、性价比较高,它色泽鲜艳、明快、丰富,动画显示效果良好,尤其适合于大型广场的广告发布及信息公告,具有较高的推广应用价值和美好的发展前景。 相似文献
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采用了MOCVD生长技术来获得高阻GaN,发现GaN的方块电阻会随着成核层退火压力的降低而迅速升高.当成核层退火压力降到75torr时,形成了高阻GaN,方块电阻达到1011Ω/□以上.原子力显微镜结果显示高阻GaN的表面非常平整,表面粗糙度只有0.15nm.在位激光检测发现高阻样品的成核层经过退火后会形成密度较高的成核岛.样品的X射线分析结果表明,随着退火压力的改变,刃型位错相对于螺型位错会有较大变化.说明刃型位错是GaN电阻变化的主要原因. 相似文献
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Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN 下载免费PDF全文
High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related. 相似文献