取样平均法提高CCD多道探讨器信噪比

应用取样平均法有效地提高了ＣＣＤ光学多道探测器信噪比，当采样次数为ｍ时，信噪比提高√ｍ倍，应用于实验得到了高信噪比的各种光谱谱图。     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

Result of search for low velocity exotic particles

The L3＋C experiment, taking advantage of the L3 muon magnetic spectrometer, measured the spatial tracks of charged cosmic ray particles to obtain rigidity as well as velocity. One possible low velocity exotic particle is observed. The existing uncertainties are discussed, and the flux upper limit of the low velocity exotic particles from this observation is deduced based on the assumption of a null observation. The result is 6.2×10^-10 cm^-2·s^-1·sr^-1 at 90% confidence level in the velocity range from 0.04c to 0.5c.     

菱形纤芯光子晶体光纤色散与双折射特性分析

针对光子晶体光纤多零色散点、高双折射的应用要求, 设计了一种新型结构的光子晶体光纤, 其纤芯由位于菱形四个角上的圆形空气孔组成. 通过有限元数值分析方法对该种结构光子晶体光纤的色散特性和双折射特性进行数值仿真, 得到色散与波长、色散与纤芯圆孔尺寸、双折射与波长、双折射与纤芯圆孔尺寸的关系. 研究结果表明:在满足光纤传输功率要求的条件下, 光纤的双折射在d₁<0.8 μupm 时的性能较好. 同时, 该种结构的光子晶体光纤在芯区直径满足d₁=0.4 μupm或 d     

10 MeV同轴腔电子加速器辐射屏蔽设计

中国科学院近代物理研究所自主研制了一台同轴腔电子加速器,能产生10 MeV,10 mA的辐照电子束,建成后有望成为我国首台国产化的花瓣形电子辐照加速器。为保证该装置运行时的辐射安全,为今后同类型装置的辐射屏蔽设计提供参考,对该加速器开展了辐射屏蔽研究。首先结合装置的使用情况给出了一种地上为主机室地下为辐照室的半地下机房结构,然后采用蒙卡程序FLUKA计算了相关墙体的厚度。在蒙卡计算中,基于同轴腔加速器的束流损失特点,建立了适用于该类型装置的蒙卡源项输入模型,充分考虑了决定辐射场的主要束损点,同时设置相对简单。结果表明:在设定的屏蔽外剂量率目标下,以普通混凝土作为屏蔽材料,主机室的侧墙、顶板和辐照室顶板的厚度分别需要160～220,110～150,150 cm。     

子空间判决分析的强干扰抑制

针对海洋中存在的强干扰和环境噪声导致水下目标方位估计算法性能剧烈下降的问题,提出了一种子空间判决分析的强干扰抑制方法(SSJ),可实现多个强干扰下的目标方位估计。根据常规波束形成粗估的目标角度区间,利用目标-干扰-噪声子空间与导向矢量的相关性,设置判决项和估计合适的判决阈值来分离和抑制样本协方差矩阵中的非目标信息,降低干扰和噪声的输出功率,同时提高输出信干噪比,为增强阵列的目标方位分辨能力提供方法支撑。仿真和海试数据处理结果显示,SSJ方法可抑制目标角度区间外的强干扰和噪声,明显降低了干扰的输出功率和目标主瓣附近的旁瓣级,提高了目标方位角度的分辨力。相比于现有的子空间干扰抑制方法,所提方法具有更加稳健的干扰抑制能力。     

Dose estimation and shielding calculation for X-ray hazard at high intensity laser facilities

An ionizing radiation hazard produced from the interaction between high intensity lasers and solid targets has been observed. Laser-plasma interactions create "hot" electrons, which generate bremsstrahlung X-rays when they interact with ions in the target. However, up to now only limited studies have been conducted on this laser-induced radiological protection issue. In this paper, the physical process and characteristics of the interaction between high intensity lasers and solid targets are analyzed. The parameters of the radiation sources are discussed, including the energy conversion efficiency from laser to hot electrons, hot electron energy spectrum and electron temperature, and the bremsstrahlung X-ray energy spectrum produced by hot electrons. Based on this information, the X-ray dose generated with high-Z targets for laser intensities between 10¹⁴ and 10²⁰ W/cm² is estimated. The shielding effects of common shielding items such as the glass view port, aluminum chamber wall and concrete wall are also studied using the FLUKA Monte Carlo code. This study provides a reference for the dose estimation and the shielding design of high intensity laser facilities.     

Generation of GHZ States via Deterministic Entanglement Concentration

We present the generation of six-particle Greenberger Horne-Zeilinger （GHZ） states via deterministic entanglement concentration and generalize the scheme to the case of 2N particles. We show that arbitrary 2N-particle GHZ states can be obtained with certain probability via entanglement concentration. This may provide a new perspective for the preparation of multi-particle GHZ states. This study is also an exploration on the theory of deterministic entanglement concentration.