α-环糊精主客体识别超分子水凝胶的制备及其宏观流变性能构建过程研究

采用7 wt%的α-环糊精(α-CD)溶液和5 wt%的甲氧基聚乙二醇甲基丙烯酸酯均聚物(PMPEGA-2000)溶液制备了α-CD/PMPEGA-2000超分子水凝胶,并对其形貌、结构、形成条件和宏观流变学性能构建过程进行了表征和研究。结果表明,体积比不低于1.5:1是两种溶液混合后形成凝胶的必要条件;当体积比为2:1时,形成的凝胶黏度最大。热重分析、X射线粉末衍射分析和扫描电镜结果表明,该凝胶是基于α-CD与PMPEGA-2000之间的主客体识别所形成,具有三维网络结构。光学微流变分析结果显示,该凝胶宏观流变性能的构建过程实则是凝胶内部主客体识别交联点不断增多,网络结构强度不断增强的过程。该过程始于α-CD溶液与PMPEGA-2000溶液混合后的8′36′′,在64′00′′后基本完成,耗时约55′24′′。     

胍盐离子液体捕获CO2温室气体的机理

通过量子力学与分子动力学对胍盐离子液体的模拟表明,胍阳离子与氯负离子之间存在较强的相互作用,其相互作用能约为-109．216kcal／m01．从能量与几何分布可见,两种空间分布方式中最稳定构象为Middle作用模式．径向分布函数也验证了这一结论．C02含量的不断增加并没有对离子液体的结构产生影响,而是被离子液体的空腔捕获．     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

We investigate the threading dislocation(TD) density in N-polar and Ga-polar GaN films grown on sapphire substrates by metal-organic chemical vapor deposition.X-ray diffraction results reveal that the proportion of screw type TDs in N-polar GaN is much larger and the proportion of edge type TDs is much smaller than that in Ga-polar.Transmission electron microscope results show that the interface between the AlN nucleation layer and the GaN layer in N-polar films is smoother than that in Ga-polar films,which suggests different growth modes of GaN.This observation explains the encountered difference in screw and edge TD density.A model is proposed to explain this phenomenon.     

HIAF BRing及高能外靶实验终端的辐射屏蔽设计

强流重离子加速器（HIAF）是中国科学院近代物理研究所自主研制的一台高能强流重离子加速器,它可以实现p到U的全离子加速。为了保证HIAF运行时的辐射安全,针对该装置的增强器（BRing）及高能外靶实验终端,利用蒙特卡洛程序FLUKA及外推法计算得到了加速p,C及U三种离子时所需的辐射屏蔽。结果表明,加速质子时所需屏蔽厚度最大,并以此为依据给出了全地下结构的屏蔽设计。在此基础上,提出了一种估算高能质子/重离子加速器束流均匀损失时横向屏蔽厚度的方法。结果显示,估算结果与FLUKA计算结果符合较好,验证了该方法的有效性和准确性。High Intensity heavy-ion Accelerator Facility (HIAF) is designed by the Institute of Modern Physics, Chinese Academy of Sciences, which can accelerate particles from proton up to uranium. To guarantee the radiation safety of HIAF during operation, the FLUKA code and extrapolation method were adopted to calculate the shielding thickness. The calculations were based on proton, carbon and uranium particles when losing on the Booster Ring (BRing) and the high-energy experimental terminal. The results indicate that the shielding thickness required for accelerating protons was the largest. Basing on the results, a method for estimating the lateral shielding of a high-energy proton/heavy-ion accelerator was proposed. A good agreement shows between the estimated results and the FLUKA calculated results, the validity and accuracy of the method were verified.     

空间激光通信最新进展与发展趋势

空间激光通信凭借其带宽优势,成为未来高速空间通信不可或缺的有效手段,是近年来国际上的研究热点。本文详细介绍了美国、欧洲和日本在空间激光通信技术领域的最新研究进展和未来发展规划,总结了国内外空间激光通信演示计划的主要参数指标。通过对空间激光通信最新研究计划的分析,归纳出空间激光通信高速化、深空化、集成化、网络化、一体化5个发展趋势,以及需要突破的高阶调制、高灵敏度探测、多制式兼容、"一对多"通信等关键技术。为我国激光通信设备及相关研究提供借鉴和参考。     

单晶金刚石氢终端场效应晶体管特性

基于微波等离子体化学气相淀积生长的单晶金刚石制作了栅长为2μm的耗尽型氢终端金刚石场效应晶体管,并对器件特性进行了分析.器件的饱和漏电流在栅压为-6 V时达到了96 mA/mm,但是在-6 V时栅泄漏电流过大.在-3.5 V的安全工作栅压下,饱和漏电流达到了77 mA/mm.在器件的饱和区,宽5.9 V的栅电压范围内,跨导随着栅电压的增加而近线性增大到30 mS/mm.通过对器件导通电阻和电容-电压特性的分析,氢终端单晶金刚石的二维空穴气浓度达到了1.99×10~(13)cm~(-2),并且迁移率和载流子浓度均随着栅压向正偏方向的移动而逐渐增大.分析认为,沟道中高密度的载流子、大的栅电容以及迁移率的逐渐增加是引起跨导在很大的栅压范围内近线性增加的原因.     

两个四唑配合物的原位合成、多样化配位模式和强荧光性质

在路易斯酸ZnCl₂或MnSO₄·7H₂O作用下,通过1-甲基-1-氢-咪唑-4,5-二甲腈与NaN₃水热原位合成了2个四唑配合物：{[Zn₂（midt）（Hmidt）]（N₃）·H₂O}_n （1）和[Mn（midt）₂·（H₂O）₂]·H₂O （2）（midt=1-甲基-1-氢-咪唑-4,5-二四唑）。X射线单晶衍射表明尽管配合物1和2均结晶于同样的P1 空间群,但他们有完全不同的结构。配合物1为一个有趣的二维聚合物结构,含有两个不同配位环境的锌原子和多种配位模式的midt配体,而配合物2为一个三维超分子结构,包含一个有趣的水分子链结构。固态下1和2分别在353和382 nm处显示出较强的蓝色荧光。