基于谱估计的噪声调频信号检测方法研究

对干扰信号的频谱特征进行精确测量和分析是实施有效的电子反干扰(ECCM)的重要步骤.通过对噪声调频干扰信号的频谱特征分析,提出采用合适的功率谱估计方法来检测噪声调频信号的主要频谱特征参数.利用MATLAB/Simulink仿真软件分别建立了噪声调频信号源和谱估计方法的系统模型,研究了系统采用不同的谱估计方法和参数设置的情况下所能够达到的检测精度,并根据仿真结果分析比较了不同谱估计方法的性能.     

Fourth-Order Spatial Correlation of Thermal Light

We investigate the fourth-order spatial correlation properties of pseudo-thermal light in the photon counting regime, and apply the Klyshko advanced-wave picture to describe the process of four-photon coincidence counting measurement. We deduce the theory of a proof-of-principle four-photon coincidence counting configuration, and find that if the four randomly radiated photons come from the same radiation area and are indistinguishable in principle, the fourth-order correlation of them is 24 times larger than that when four photons come from different radiation areas. In addition, we also show that the higher-order spatial correlation function can be decomposed into multiple lower-order correlation functions, and the contrast and visibility of low-order correlation peaks are less than those of higher orders, while the resolutions all are identical. This study may be useful for better understanding the four-photon interference and multi-channel correlation imaging.     

红外导引头整流罩技术研究

从材料选择和整流罩设计两方面,介绍了如何解决高速红外导引头整流罩问题.针对高速红外成像导引头使用环境的要求,分析了整流罩材料选择应考虑的因素.通过比较材料的透过率、硬度、抗弯强度和热膨胀等性能参数,得出尖晶石是较理想的高速导弹整流罩材料,其机械性能和光学性能良好,易于制备,并已取得成功应用;红外玻璃特别适合大尺寸和复杂形状制备.为了减小整流罩气动加热效应,分析了解决气动加热问题的途径,提出可通过镀金刚石膜、信号处理、共形设计等技术来减小影响,并简要介绍共形整流罩设计原理和制造.     

两模腔场谱间的量子干涉

研究了高Q腔中单个二能级原子与两模二项式光场依赖强度耦合相互作用系统的腔场谱,给出了弱初始场条件下的数值结果,讨论了两模光场之间的量子干涉对腔场谱结构的影响. 发现当两模光场的频率差Δ>g（g为原子与腔场间的耦合常数）时,两模光场间的干涉效应对谱结构没有影响,系统的腔肠谱只是两模腔肠谱的简单叠加;当Δ≤g时两模腔场谱间的干涉比较明显. 在强初始场条件下,量子干涉效应可忽略. 关键词： 腔场谱 量子干涉 两模二项式光场     

The Interaction of Peregrine Solitons

We theoretically investigate the interaction of two in-phase and out-of-phase Peregrine sofitons in a Kerr nonlinear medium, addressing both the cases of first- and second-order solitons. Upon adjusting the interval between the sofitons, their interactions exhibit different properties. If the interval is sufficiently large, two Peregrine sofitons will propagate individually and will not interact each other. However, if the interval is not very large, the Peregrine solitons will strongly interact and display varying behavior.     

Kerr效应对非线性J-C模型辐射谱的影响

研究了Kerr介质腔中非线性J-C模型的辐射谱.导出了双模初始光场处于任意量子态时辐射谱的计算公式,给出了光场处于数态、相干态和压缩真空态时的数值结果,讨论了Kerr效应和初始场强对辐射谱的影响.发现在光子数态的情况下,Kerr效应使低频峰增强、高频峰减弱,并使各峰向右移动.在初始腔场为较强的相干态时,原子辐射谱明显地分成两个拱形的梳状峰群,Kerr效应的增强使左侧峰群增高,右侧的边峰受到抑制.在压缩真空态情况下,边带峰只出现在中心频率双峰的左侧,随Kerr效应和初始场的增强,边峰个数也随之增多.无论哪种情况都破坏谱结构的对称性,在强场条件下Kerr效应的影响更加显著.     

脉冲激光对CCD的软损伤技术研究

根据CCD的结构特点,研究分析了YAG脉冲激光对CCD的损伤及其损伤机制,开展了脉冲激光对CCD的软损伤实验,实验验证了光饱和及光饱和串音现象,并提出了光电对抗中可以利用CCD的光饱和串音现象实现干扰对方的光电传感系统的结论。     

一种1.8 V 24×10-6/℃宽温度范围CMOS带隙基准电压源

阐述了一种输出电压为853 hV的带隙基准电压源电路,该电路采用0.18μm标准CMOS工艺实现,可在1.8 V的电源电压下工作,在-20℃到120℃温度范围内其温度系数为24×10-6/℃.在频率低于10kHz时,电源抑制比保持在-66dB.电路版图的有效面积为0.022 mm2.该电路已成功应用于低功耗CMOS图象传感器芯片当中.     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.