相干信号源的空时三维参数分离估计方法

文中提出了一种宽频段窄带相干信号源的频率和二维波达方向估计的新方法。该方法利用L型阵列并结合一定的时域信息,将相干源的三维参数估计问题转化为3个一维问题,并在每一维使用空间平滑方法和ESPR IT算法求解相应参数,最后通过求解联立方程,获得相干信号的三维参数。因此,避免了谱峰搜索,并且算法本身的并行处理能力,提高了测向系统的实时性。计算机仿真结果表明了该算法的有效性。     

中外语言对译器简介

中外文翻译机俗称“好易通”，它的出现大约已有１０个年头了。它的特点是必须输入被译的内容，才能翻译，其目的是用于取代“字典”。而中外语言对译器在“好易通”的基础上又提高了一个档次，它的显著特点是能直接语言输入，直接语言输出，实现中外语言互译对讲。例如，英译中，说“Ｈｏｗ ａｒｅ ｙｏｕ？”此机就发出“你好吗？”的声音，若中译英，说“早晨好！”它就发出“Ｇｏｏｄ ｍｏｒｎｉｎｇ！”的声音等，并且它包括单词互译、短语互译、句子互译等方式。它的显示系统同“好易通”。它既是一本小巧的“活字典”，又是你的翻译…     

基于BSIM3的超深亚微米器件建模及模型参数提取

对适用于超深亚微米电路模拟的 MOSFET器件模型进行了研究 ,完成计入量子效应、多晶硅耗尽效应等基于 BSIM3的 MOSFET模型。针对阈值电压模型以及 I- V模型中的参数编写了模型参数提取程序 ,采用最小二乘法原理 ,并采用麦夸脱算法以降低参数提取结果对初值的依赖 ,对已有参数进行了修正。模型以及参数提取结果都分别进行了验证。     

不良关键词知识图谱构建技术研究

为拦截不良文本信息，策略专员定制了大量关键词组合策略。策略中的关键词蕴含了丰富的不良文本特征知识，这些知识零散地分散在数千条策略中，缺乏整体性和系统性，不能进行有效的二次利用。本文研究了不良关键词知识图谱构建方法，将关键词组合策略形成知识图谱，提供不良文本特征知识高效查询能力，方便线下大数据分析使用，具有实际应用价值。     

高电阻率多层纳米颗粒膜软磁特性及微波磁导率

研究了应用于微波频段的多层纳米颗粒膜的电阻率、软磁特性和微波磁导率.采用多次顺序沉积Co₄₀Fe₄₀B₂₀和SiO₂薄层制备了薄膜.在100kA/m均匀面内磁场经过250℃真空退火2h,制备的Co₄₀Fe₄₀B₂₀/SiO₂多层膜具有难轴矫顽力为210A/m、饱和磁化强度为838.75kA/m、电阻率为2.06×10^{3关键词： 纳米颗粒膜 电阻率 软磁特性 微波磁导率}     

群聊业务中的跨消息关键词匹配技术研究

近年来,以群聊为媒介的不良信息和诈骗信息传播变得愈发猖獗.相比于点对点通信,群聊具有多人高交互性的特点,一些不良信息需要通过结合多条消息才能识别,需要研究跨多条消息的关键词匹配技术.本文重点对跨消息关键词匹配流程中的消息缓存和关键词匹配两个步骤进行了深入研究,并给出了高效的实现方案.该方案对群聊业务监控策略的设计和实现...     

Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation

We develop a Monte Carlo (MC) tool incorporated with the three-subband approximation model to investigate the in-plane spin-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersubband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-subband approximation model, the spin dephasing length is reduced four times under 0.125\,kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subband approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spin-dependent transport of GaAs 2-dimensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a certain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin--orbit interaction.     

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.     

STI应力效应下的pMOSFET阈值电压物理模型

本文提出了浅沟道隔离（STI）应力效应下的P型MOSFET的阈值电压物理模型,并用不同STI版图位置的130纳米的器件数据进行了验证。基于此STI阈值电压模型,我们对比了p型MOSFET和n型MOSFET在STI应力下的阈值电压和迁移率的变化。数据表明,相比n型MOSFET,p型MOSFET的阈值电压更少地受到STI应力影响,但迁移率却更多地受到STI应力影响。基于此STI阈值电压模型,我们进行了九级震荡环电路的模拟。模拟数据显示,适当的STI应力能使电路平均延迟时间提高约11%,同时也说明了STI应力模型在电路设计中的重要性。     

涡轮过渡段气动性能数值优化

采用CFD数值模拟方法对中档功率燃气轮机燃气涡轮与动力涡轮之间的涡轮过渡段进行气动性能优化设计.在原始涡轮过渡段流道及承力支板基础上,新设计进口导流叶片,优化过渡段流道,并采用Numeca软件Design3D 优化平台计算机自动寻优,数值模拟相对比较说明,新设计的涡轮过渡段气动性能满足指标要求.涡轮过渡段承接燃气涡轮、...