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低损耗、高Qm值Pb(Nb2/3Mn1/3)O3—Pb(Sb2/3Mn1/3)O3—PZT材料 总被引:1,自引:0,他引:1
研究了组分变化及掺杂对四元系Pb(Nb2/3Mn1/3)O3-Pb(Sb2/3Mn1/3)O3-PZT压电材料性能的影响,发现Zr/Ti比值在准同型相界附近该材料有最大的压电常数d33,而机械品质因数Qm值较小;Zr/Ti比偏离该相界时则机械品质因数Qm升高,相应的压电常数d33减小。通过改变Pb(Nb2/3Mn1/3)O3、Pb(Sb2/3Mn1/3)O3两组分的含量及掺入Sr、Ce等杂质,获得的材料介电损耗为0.14%,机械品质因数为2341,压电常数为216pC/N。 相似文献
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压电超声微马达的研究 总被引:6,自引:0,他引:6
介绍了压电超声微马达在国内外的主要研究成果,比较了各类型微马达的优缺点,提出了作者发展压电微马达的几点建议。 相似文献
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Effect of Annealing on Ferroelectric Properties of Nanometre BaTiO3 Ceramics Prepared by High Pressure Sintering Method
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Dense nanocrystalline BaTiO3 ceramics with a grain size of 5Onto are prepared under 6 GPa at 1273K using a high pressure sintering method. The sintered bulk is uniform and the relative density is above 97%. We anneal the ceramic samples in oxygen with various temperatures and for the annealing, several broadened peaks can be observed at different times without apparent grain growth. After about 378K( by dielectric measurements. However, these peaks are very different from those of coarser-grained ceramics. It is indicated that both the elimination of oxygen vacancies and the release of residual stresses caused by high pressure greatly improve the overall ferroelectric properties of BaTiO3 ceramics. The observation of nearly linear polarization hysteresis loop after anneal provides the solid evidence of ferroelectricity in these nano-sized BaTiO3 ceramics. It is believed that the absence of 90° domains and the existence of poor-permittivity nonferroelectric grain boundaries contribute to the slim loop. 相似文献
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用正电子寿命测量方法研究了锆钛酸铅(简称PZT)压电陶瓷的电场极化效应。发现正电子平均寿命τm随极化场强E的提高而增大。讨论了τm增大的微观机制,这可能主要归因于内电场增大在能量上有利于正电子形成qPs态。同时进行了介电常数、机电耦合系数、压电常数等的测量,并与正电子寿命测量的结果作了对比,认为将正电子作为测量电畴转向程度及电子能量状态变化的一种手段是可能的。正电子寿命测量采用了特殊的单样品法,并就与此有关的数据处理和分析方法进行了若干讨论。
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在对不同有机溶剂分子结构分析的基础上,选取甲醇、DMF(N,N-二甲基甲酰胺)和乙腈溶液为碳源,以脉冲直流电源电解有机溶液的方法在Si片上制得了含氢类金刚石薄膜(DLC薄膜),并研究了退火对薄膜结构的影响.通过X射线光电子能谱(XPS),喇曼(Raman)和红外(IR)光谱对薄膜的结构进行了分析表征.XPS表明薄膜的主要成分为C,喇曼光谱显示所得薄膜为典型DLC薄膜.喇曼和红外光谱还表明,膜中含有大量H并且主要键合于sp3碳处.随着退火的进行薄膜中的H被去除.随温度升高薄膜电阻率的下
关键词:
类金刚石薄膜
退火 相似文献
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The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera 相似文献
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用化学共沉淀工艺制备了Co—Ti替代系列钡铁氧体磁粉及烧结磁体,结合相结构、显微形貌分析和对材料磁化机理的讨论,该文主要研究了替代量和烧结温度对钡铁氧体高频磁性的影响。实验表明,初始磁导率和共振频率随替代量的变化存在极值,当Co—Ti替代量为1.0时钡铁氧体具有较高的磁导率和较低的磁共振频率,偏离1.0均导致磁导率的降低和磁共振频率的升高;高烧结温度导致晶粒尺寸的长大和品格结构的完善,有利于提高材料的磁导率,同时降低了磁共振频率。 相似文献