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研究了NiSi金属栅的各种电学特性及其热稳定性,提出一个物理模型用于解释当形成温度大于500 ℃时NiSi功函数随退火温度升高而增大的现象.测量了不同退火温度形成的NiSi材料的方块电阻,当退火温度大于400 ℃时,方块电阻达到最小,并在400—600 ℃范围内稳定.比较各种温度下形成的NiSi材料X射线衍射谱的变化,说明温度在400—600 ℃范围内NiSi相为最主要的成分.制备了以NiSi为金属栅的金属氧化物半导体电容.通过等效氧化层电荷密度及击穿电场Ebd的分布研
关键词:
金属栅
NiSi
炉退火
快速热退火 相似文献
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有机化合物特定位点嵌入氟原子或含氟片段,可以产生独特的生物或物理性质改变.单氟取代烯基是生物医药领域理想的酰胺键替代物,在医药化学、药物研发等方向已经获得广泛的应用.通过溴化镍(Ⅱ)二乙二醇二甲醚复合物、4,4'-二叔丁基-2,2'-二吡啶的催化体系,实现了多种氟代烯基硼酯与一级烷基卤化物碘代物、溴代物以及二级烷基溴代物的Suzuki偶联反应.该反应具有良好的收率和优秀的官能团兼容性,能够兼容酯基、氰基、醇羟基等多种具有有机合成化学价值的官能团,为单氟取代烯烃的合成提供了方法.机理实验表明该反应可能经历烷基卤化物自由基均裂历程. 相似文献
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Field measurements of bottom boundary layer processes and sediment resuspension in the Changjiang Estuary 总被引:1,自引:0,他引:1
A field observation of the hydrodynamics and the sediment resuspension in a bottom boundary layer was carried out in the Changjiang Estuary, during July-August 1997. Using bottom field research facilities, detailed measurements of near-bottom currents and suspended sediment concentration distribution within 1.0 m above bed have been obtained in the Changjiang Estuary——a high concentration estuary. An Acoustic Suspended Sediment Monitor (ASSM) wasused to observe near bed sediment resuspension processes. In addition, the log-profile method was applied to estimating hydraulic roughness Z0 and bottom shear stress values (or friction velocities u). Further understanding of sediment suspension mechanics and hydrodynamic characteristics will require the long-term measurements of near bed processes. 相似文献
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为实现高性能处理器,超导RSFQ(快速单磁通量子)电路被提出.该电路主要由超导约瑟夫森结和超导无源传输线组成,对其建模分析是超导RSFQ电路设计的基础.本文提出了基于FDTD(时域有限差分)的约瑟夫森结与超导传输线的协同分析方法.该方法采用FDTD数值方法求解超导传输线的电报方程.在超导传输线与约瑟夫森结交界处的非线性边界条件上,采用了Newton-Raphson迭代算法.数值结果表明,本文提出的约瑟夫森结和超导传输线的协同分析方法与WRspice仿真软件相比具有相同精度,且运算效率显著提高. 相似文献
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多层铜布线CMP后表面残留CuO颗粒的去除研究 总被引:2,自引:1,他引:1
This article introduces the removal technology of CuO particles on the post CMP wafer surface of multi-layered copper. According to the Cu film corrosion curve with different concentrations of HEO2 and the effect curve of time on the growth rate of CuO film, CuO film with the thickness of 220 nm grown on Cu a surface was successfully prepared without the interference of CuC12.2H20. Using the static corrosion experiment the type of chelating agent (FA/O II type chelating agent) and the concentration range (10-100 ppm) for CuO removal was determined, and the Cu removal rate was close to zero. The effect of surfactant on the cleaning solution properties was studied, and results indicated that the surfactant has the effect of reducing the surface tension and viscosity of the cleaning solution, and making the cleaning agent more stable. The influence of different concentrations of FA/O I type surfactant and the mixing of FA/O II type chelating agent and FA/O I type surfactant on the CuO removal effect and the film surface state was analyzed. The experimental results indicated that when the concentration of FA/O I type surfactant was 50 ppm, CuO particles were quickly removed, and the surface state was obviously improved. The best removal effect of CuO on the copper wiring film surface was achieved with the cleaning agent ratio of FA/O II type chelating agent 75 ppm and FA/O I type surfactant 50 ppm. Finally, the organic residue on the copper pattern film after cleaning with that cleaning agent was detected, and the results showed that the cleaning used agent did not generate organic residues on the film surface, and effectively removes the organic residue on the water. 相似文献
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This work investigates the static corrosion and removal rates of copper as functions of H202 and FA/OIIconcentration, and uses DC electrochemical measurements such as open circuit potential (OCP), Tafel ana- lysis, as well as cyclic voltammetry (CV) to study HaOa and FA/OIIdependent surface reactions of Cu coupon electrode in alkaline slurry without an inhibitor. An atomic force microscopy (AFM) technique is also used to measure the surface roughness and surface morphology of copper in static corrosion and polishing conditions. It is shown that 0.5 vol.% H202 should be the primary choice to achieve high material removal rate. The electro- chemical results reveal that the addition of FA/O II can dissolve partial oxide film to accelerate the electrochemical anodic reactions and make the oxide layer porous, so that the structurally weak oxide film can be easily removed by mechanical abrasion. The variation of surface roughness and morphology of copper under static conditions is consistent with and provides further support for the reaction mechanisms proposed in the context of DC electro- chemical measurements. In addition, in the presence of H202, 3 vol.% FA/O II may be significantly effective from a surface roughness perspective to obtain a relatively flat copper surface in chemical mechanical planarization (CMP) process. 相似文献
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