聚四氟乙烯微波复合介质板的研制

微波复合介质板是现代电子设备重要的基础材料之一.文中介绍了微波复合介质板系列国产化的研究开发情况,突破介质板材料开发和工程化制造技术,成功研制出3类聚四氟乙烯微波复合介质板.该复合介质板的性能指标达到了预期要求,通过应用对比试验表明了其已等效进口介质板的性能.     

基于累积共识贡献的不确定语言共识决策方法

针对不确定加型语言偏好信息下的群决策问题,提出一种基于累积共识贡献的自适应式语言共识决策方法。首先,将不确定加型语言偏好转化为不确定二元语义偏好,定义个体一致度与个体共识偏度,并利用它们构建确定专家初始权重的优化模型;然后,利用不确定二元语义的可能度构造集结模糊评价矩阵以及方案的集结群体偏好,提出专家累积共识贡献测度和群体共识测度,通过对拥有较少合作的专家权重进行惩罚让群体自适应地达成共识,无需强迫专家修改其观点,提出一种群体共识决策方法对方案排序择优。最后,通过一个算例说明方法的可行性和有效性。     

基于“零和收益”的SBM效率分配方法及应用

在松弛变量度量(slacks-based measure,SBM)效率评价方法的基础上,首先明确投入(产出)要素固定的生产系统中,投入(产出)要素在各决策单元间的竞争性关系;然后采用比例分配策略对SBM无效决策单元的投入(产出)松弛进行效率分配,以构建一个基于零和收益的SBM(zero sum gains SBM,ZSG-SBM)效率分配方法;再通过分析ZSG-SBM模型与SBM模型效率评价结果的关系,给出了比例分配策略ZSG-SBM模型的求解方法;最后应用实例研究验证了本文模型在要素存在竞争性的复杂生产系统效率评价和资源分配中的优势。     

p型GaN的掺杂研究

采用正交实验设计方法设计p型GaN的生长,通过较少的实验,优化了影响p型GaN性质的三个生长参数：Mg流量、生长温度和Ⅴ/Ⅲ比．过量的Mg源流量、过高的生长温度、过大的Ⅴ/Ⅲ比都会降低自由空穴浓度．还研究了退火温度对p型GaN的载流子浓度和光学性质的影响．实验结果表明,700～750℃范围为最佳退火温度．     

氮化镓基发光二极管的发光光谱和功率特性

用直流和脉冲电流的方法研究了氮化镓基紫色和蓝色发光二极管的发光光谱和功率特性.结果表明,紫色发光二极管的发光中心波长在直流情况下随电流的增加发生红移,在脉冲情况下随电流的增加发生蓝移;蓝色发光二极管的发光中心波长在直流和脉冲情况下都发生蓝移.两种发光二极管的功率在直流情况下会发生饱和,并随电流的进一步增加而急剧减小,以上现象可能是由于热效应和量子阱中的压电效应引起的.     

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of the activation energy derived from temperature dependent photoluminescence(PL) of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.     

The residual C concentration control for low temperature growth p-type GaN

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure;(ii) we have found there exists a Ga memory effect when changing the Cp_2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp_2 Mg flow;(iii) annealing outside of metal–organic chemical vapor deposition(MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.     

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron blocking layer(EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_(0.04)Ga_(0.96)N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_(1-x)N hole blocking layer(HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_(1-x)N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_(1-x)N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.     

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern （FFP） are 12° and 32°, respectively.     

表面处理对p-GaN欧姆接触特性的影响

研究了王水溶液对p-GaN欧姆接触特性的作用.在蒸镀欧姆电极之前采用王水溶液对表面进行处理,使p-GaN的比接触电阻从8×10-3降低到2.9×10-4Ω·cm2.利用X射线光电子谱(XPS)对p-GaN表面氧含量进行分析,结果表明王水可以有效地去除p-GaN表面的氧化物,从而改善p-GaN的欧姆接触特性.