基于Pekar类型变分法的高斯函数型限定势阱量子点中电子的跃迁

分别选取抛物线型限定势阱和高斯函数型限定势阱描写盘状量子点中电子的横向限定势和纵向限定势,采用Pekar类型变分法推导出了电子的基态和激发态能量,并基于费米黄金规则讨论了在磁场作用下电子的跃迁几率。结果表明,高斯函数型限定势阱比抛物线型限定势阱更能精准反映量子点中真实的限定势;量子点的厚度对电子跃迁几率的影响显著;电声耦合强度α、磁场的回旋频率ω_c、抛物线型限定势阱范围R_0、高斯函数型限定势阱的阱深V_0和阱宽L等对电子跃迁几率Q的影响的量度和变化规律方面差异较大。     

A review:aluminum nitride MEMS contour-mode resonator

Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.     

极性晶体膜中电子—表面声子强耦合极化子的自陷能

采用Ｈｕｙｂｒｅｃｈｔｓ线性组合算符和变分法相结合的方法,研究了极性晶体膜内电子与体纵光学声子弱耦合、与表面光学声子强耦合系统的基态能量,得到了作为膜厚和耦合常数函数的极化子的自陷能,对ＫＣｌ晶体进行了数值计算,结果表明,不同支声子与电子相互作用对极化子自陷能的贡献大不相同     

CdF_2半导体中表面磁极化子的性质

本文讨论电子和表面光学声子耦合强、与体纵光学声子耦合弱时对ＣｄＦ２半导体表面磁极化子性质的影响．采用线性组合算符法和微扰法导出了ＣｄＦ２半导体中表面磁极化子的有效哈密顿量．在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了对ＣｄＦ２半导体中表面磁极化子性质的的影响．对ＣｄＦ２半导体进行数值计算,结果表明,ＣｄＦ２半导体中表面磁极化子的振动频率λ和诱生势Ｖｉｓ随坐标ｚ的增加而减小,随磁场Ｂ的增加而增加;诱生势Ｖｉｂ随坐标ｚ的增加而增加,但与外磁场Ｂ无关;有效势Ｖｅｆ随坐标ｚ和磁场Ｂ的增加     

CdSeS合金结构量子点的多激子俄歇复合过程

多激子效应通常是指吸收单个光子产生多个激子的过程,该效应不仅可以为研究基于量子点的太阳能电池开拓新思路,还可以为提高太阳能电池的光电转换效率提供新方法.但是,超快多激子产生和复合机制尚不明确.这里以CdSeS合金结构量子点为研究对象,研究了其多激子生成和复合动力学.稳态吸收光谱显示, 510, 468和430 nm附近的稳态吸收峰,分别对应1S_(3/2)(h)-1S(e)(或1S), 2S_(3/2)(h)-1S(e)(或2S)和1P_P(3/2)(h)-1P(e)(或1P)激子的吸收带.通过飞秒时间分辨瞬态吸收光谱和纳秒时间分辨荧光光谱两种时间分辨光谱技术对CdSeS合金结构量子点的超快动力学进行了探究,结果显示, 1S激子的双激子复合时间大概是80 ps,这一时间比传统量子点的双激子复合时间(小于50 ps)延长了近一倍,结合最近发展的超快界面电荷分离技术,在激子湮灭之前将其利用起来,这一时间的延长将有很大的应用前景;其中,在2S和1P激子中除上述双激子复合外,还存在一个通过声子耦合路径的空穴弛豫过程,时间大概是5—6 ps.最后,利用纳秒时间分辨荧光光谱得到该样品体系单激子复合的时间约为200 ns.     

低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光     

Approximate solution of the magneto-hydrodynamic flow over a nonlinear stretching sheet

The approximate solution of the magneto-hydrodynamic (MHD) boundary layer flow over a nonlinear stretching sheet is obtained by combining the Lie symmetry method with the homotopy perturbation method. The approximate solution is tabulated, plotted for the values of various parameters and compared with the known solutions. It is found that the approximate solution agrees very well with the known numerical solutions, showing the reliability and validity of the present work.     

Magnetic field and temperature dependence of the groundstate energy of weak-coupling magnetopolaron in quantum rods with hydrogenic impurity

The dependence of the ground-state properties of weak-coupling bound magnetopolarons in quantum rods (QRs) with hydrogenic impurity on magnetic field and temperature is studied by means of the Lee-Low-Pines (LLP) transformation method and Huybrechts linear combination operator method. The expression for the ground-state energy of the magnetopolaron is derived. Results of the numerical calculations show that the ground-state energy of weak-coupling bound magnetopolarons in QRs with hydrogenic impurity increases with increasing the cyclotron frequency of the magnetic field, the confinement strength of QRs and the temperature, but decreases with increasing the electron-phonon coupling strength and the dielectric constant ratio. The stability of the ground state of magnetopolarons is closely related to the aspect ratio e′of the QR. The ground state of magnetopolarons is the most stable at e′=1. The stability of the ground state of magnetopolarons can remarkably decrease when the value of the aspect ratio increases or decreases from 1.     

一款高性能的单片频率合成器

脉冲吞除式数字锁相环频率合成器是一种在通信、雷达等领域中得到广泛应用的器件,其基本结构框图如图１所示,它的最大特点是信道间隔小、工作频率高。随着数字技术和大规模集成电路（ＬＳＩ）技术的发展,一些高集成、高性能的单片式频率合成器芯片应运而生,它们将双模前置分频器与可变程序分频器和参考分频器等一起集成于一个芯片内,使得电路设计变得更为灵活、控制更为方便。加拿大ＭＩＴＥＬ公司推出的ＳＰ８８５８就是这佯一种芯片,它将一个÷１６／１７（或÷８／９）的前置分频器集成于片内,同时将程序分频器设计成ＥＣＬ电路,…