土贝母化学成分的研究 Ⅲ.土贝母苷甲的结构

从葫芦科植物假贝母(Bolbostemma paniculatum[Maxim] Franquet)的鳞茎中分得五个苷类化合物:土贝母苷甲(1)、乙、丙、丁和戊.通过对1及其各选择性水解产物的 NMR 分析确定了它的结构,为一新的三萜皂苷.     

Machine Learning and Micromagnetic Studies of Magnetization Switching

Magnetization switching is one of the most fundamental topics in the field of magnetism.Machine learning(ML)models of random forest(RF),support vector machine(SVM),deep neural network(DNN)methods are built and trained to classify the magnetization reversal and non-reversal cases of single-domain particle,and the classification performances are evaluated by comparison with micromagnetic simulations.The results show that the ML models have achieved great accuracy and the DNN model reaches the best area under curve(AUC)of 0.997,even with a small training dataset,and RF and SVM models have lower AUCs of 0.964 and 0.836,respectively.This work validates the potential of ML applications in studies of magnetization switching and provides the benchmark for further ML studies in magnetization switching.     

广义Rayleigh商与有限元法2-网格离散方案

研究广义Rayleigh商和高效率有限元计算方案,做了下列工作：1）把Rayleigh商加速技巧推广到非自共轭问题,定义了算子型广义Rayleigh商和弱形式型广义Rayleigh商,并建立了近似特征向量及其广义Rayleigh商之间的基本关系式.2）在误差估计式中用有限元特征值的陡度取代准确特征值的陡度,得到新的误差估计式.3）在许进超和周爱辉工作的基础上建立了解非自共轭椭圆微分算子特征值问题的有限元2-网格离散方案,并用于协调有限元法和非协调有限元法.从理论分析和数值实验两个方面证明了2-网格方案的有效性.4）把解自共轭椭圆微分算子特征值问题的迭代Galerkin法、插值校正法和梯度重构法推广到非自共轭椭圆微分算子特征值问题.     

光辐照对单根In掺杂ZnO纳米线电学性质的影响

通过化学气相沉积方法成功制备了高质量的In掺杂ZnO纳米线.选用325 nm的He-Cd激光器做为光源,进一步探究了单根In掺杂ZnO纳米线的光响应特性.结果表明:紫外光辐照可使金属电极与纳米线之间的有效肖特基接触势垒下降,使接触类型由肖特基接触转变到欧姆接触;撤去紫外光后,电极与纳米线之间的接触可以恢复到未光照时的肖特基接触.讨论了肖特基接触与欧姆接触之间转变的物理机制.     

Tuning of the periodicity of stable self-organized metallic templates

The atomic and electronic structures of Pb bilayer/Pt(111) are investigated with two theoretical calculations.We find that the stable (2 × 2)/(3 × 3) Pb/Pt(111) structure is a promising candidate for being used as a template with self-organized ordered Pb semi-cluster array on the first Pb monolayer.This stable structure can realize the ordered Au single-atom array around the Pb semi-clusters that can cause selective adsorption of noble atoms.The size of Pb magic number semi-cluster plays a more important role in determining the periodicity of the template than the lattice constant misfit between the substrate and the overlayer.This leads to quite a different periodicity between the two stable templates,which are (2 × 2)/(3 × 3) Pb/Pt(111) and Pb/Cu(111).Therefore,by considering the size of the stable semi-clusters and carefully selecting different substrate materials,we can tune the density of Pb semi-clusters as the nucleation points and then tune the periodicity of the stable template.     

数字激光散斑照相技术测金属的热胀系数

利用数字激光散斑照相技术对金属热胀系数进行了测量。产生激光散斑的散射体(毛玻璃片)随被测金属棒受热膨胀而相应移动,数字照相机(CCD)将一系列随温度上升而平移的激光散斑场记录下来。通过计算机程序对采集到的图像进行频谱分析,获得两幅数字激光散斑场相对应的干涉条纹图像,计算条纹间距从而得到温度变化导致的金属棒伸长量,并计算出金属材料的膨胀系数。     

基于检测概率模型的多信号组合滤波算法研究

基于无线信号的定位技术中,由于环境的限制,导致单一信号覆盖面受限,而且不连续,因此很难获得较高的定位精度和较广的覆盖程度。同时,传统的非线性滤波计算复杂度太高,严重影响定位的实时性。考虑到精度、覆盖面和实时性相互制约的关系,如何寻找到一种不过多增加计算负担,并能保证一定定位精度的无缝定位方法是本文的重点。本文考虑利用检测概率模型,充分而有效地融合目标区域内的多种信号的量测信息,在贝叶斯框架下建立一种线性和非线性的组合滤波模型,对目标进行有效地定位估计,改善了定位跟踪技术的稳健性问题,具有较高的实际价值。仿真结果表明,论文所设计的多信号组合滤波模型,既能保证定位的精度,又能较多地节省计算时间,显著提高了定位跟踪的综合性能。      

一种适用于复杂加载状态下微喷射物质面密度测量的Asay膜方法

为了解决传统Asay膜方法不适用于复杂加卸载条件下微喷射物质面密度测量的问题,采用光子多普勒速度计（photonic Doppler velocimetry, PDV）测量微喷射物质速度结合传统Asay膜方法的膜速曲线发展了测试复杂加载条件下微喷射面密度的新方法。采用数值实验和轻气炮实验对新方法进行了分析和评估。针对3种典型微喷射物质速度分布情况,利用数值实验分析评估了实际应用场景下因PDV给出的微喷物速度偏离理论值对面密度测量的影响,通过对PDV给出的微喷物速度线性插值处理,可确保新方法与理论值测量偏差小于20%。通过轻气炮加载预置粉末样品实验对比评估了新方法和传统方法的测量效果,采用2种方法分别处理同一发实验数据,结果显示,新方法相较于传统Asay膜方法的测量偏差小于20%。     

基于GEO通信卫星干扰技术的建模与仿真

由于GEO轨道资源有限,GEO通信卫星之间距离缩小,不可避免相互干扰。分析了空间信号传输链路的损耗,研究了目前GEO通信卫星所采用的喇叭天线和抛物面天线的信号特征,建立了上行链路信号干扰模型,最后基于X频段和Ka频段的GEO通信卫星干扰进行了建模与仿真,验证了干扰的有效性。     

First-Principles Study of Intrinsic Point Defects of Monolayer GeS

The properties of six kinds of intrinsic point defects in monolayer GeS are systematically investigated using the“transfer to real state”model,based on density functional theory.We find that Ge vacancy is the dominant intrinsic acceptor defect,due to its shallow acceptor transition energy level and lowest formation energy,which is primarily responsible for the intrinsic p-type conductivity of monolayer GeS,and effectively explains the native p-type conductivity of GeS observed in experiment.The shallow acceptor transition level derives from the local structural distortion induced by Coulomb repulsion between the charged vacancy center and its surrounding anions.Furthermore,with respect to growth conditions,Ge vacancies will be compensated by fewer n-type intrinsic defects under Ge-poor growth conditions.Our results have established the physical origin of the intrinsic p-type conductivity in monolayer GeS,as well as expanding the understanding of defect properties in lowdimensional semiconductor materials.