应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

用改进的图形结构测量金属/薄层半导体的接触电阻率

提出一种诊断金属／薄层半导体欧姆接触质量的改进测试图形──单点圆环结构模型．本结构不仅样品制备简单，只需做上一个小圆点和一个同心的圆环接触，无需台面绝缘，而且还有多样的灵活性．整个测试都是定域在一个小圆环内，无需考虑边界效应以及邻近其他图形的影响．发展和讨论了此模型的两种演变结构形式，使之更为简捷实用．所得结果与文献的报道一致．     

Isoscalar Giant Resonances of ^120Sn in the Quasiparticle Relativistic Random Phase Approximation

The quasiparticle relativistic random phase approximationmean field ground state in the response function formalism(QRRPA) is formulated based on the relativistic The pairing correlations are taken into accountin the Bardeen-Cooper-Schrieffer approximation with a constant pairing gap. The numerical calculations are performed in the case of various isoscalar giant resonances of nucleus ^120Sn with parameter set NL3. The calculated results show that the QRRPA approach could satisfactorily reproduce the experimental data of the energies of low-lying states.     

改进的本征态展开方法求解含时薛定谔方程

本改进了原有的本征态展开方法。通过从能量E到q=（2E）的平方根的表象变换，不仅准确地计算了在此方法中起重要作用的低能电子布居，而且大幅度地减少了计算时间。利用这个高效的方法，我们计算了在强激光作用下一个模型原子的高次谐波发射谱。     

小朋友学习珠心算

第二节 进位加法 一、20以内的进位加法 两个一位数相加,和等于10或大于10的加法。我们称进位加法。如图所示:     

小朋友学习珠心算

炎一6,4 35 一2,314 一()一()一(》() 7,只2_一6 夕,8一37 一5,6 13 ()()()·() 一6,514 ()()、()() 9,3 68 8,694 6,837 一4,15一4 ()()()() 一4,2 71 ()()一()() 一4,1 23 ()_.()戈)() (二)一盘清 女日: 7,486 请小朋友算题: 一5,2」71 一}一!一}一_{ 二军止 暴 7,一24 98,246 5。948 人一70‘ 一(一)(「)()(.) 位位对齐同位相减(不借) 一7,103 ()()()() 珠算是改珠形式: 布7,456 1,9528,7_92 4,8 96 一l,3 10一6,1一72 ()()()()_()()()() 一2,754 ()()()_() 用一盘清方法计算: 二二 兰二 58一一65--l3一 76--23一93一一 7,3 2 63,6 1 89,…     

激光诱导H_2S催化裂解制备H_2的研究

在室温常压静态条件下研究了以Ｖ２Ｏ５／ＴｉＯ２为催化剂，紫外脉冲激光诱导Ｈ２Ｓ催化分解为Ｈ２和Ｓ的反应及其机理。考察了产氢量与激光不同照射条件之间的关系。     

双光学平板莫尔条纹实验

传统的莫尔(Moire′)条纹一般是在一组透射光栅上实现的。本文提出了一种实现莫尔条纹的新方法——双光学平板法。利用两块相同厚度的光学平板产生的多光束干涉效应来产生莫尔条纹。原理光线斜入射至一光学平板时,其反射光会在远处屏幕上产生一组清晰的干涉条纹。再使第一平板上的反射光以同样入射角入射到第二平板上。最终的反射光为两组干涉条纹的重叠,即产生了莫尔条纹。实际光路见图,激光束由透镜L略加扩束后到达固定平     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.