EFI及其安全性研究

为了解决传统PCBIOS的局限性及其面临的问题,Intel公司提出了可扩展固件接口(EFI)的规范标准。作为下一代BIOS,EFI为启动操作系统前的程序提供了一个标准环境。文中详细介绍了EFI,指出EFI存在的一些安全问题,并分析相关的安全机制,指出了实现EFI安全必须考虑的因素。     

浅谈HARRIS BMXdigital调音台的功能特色

美国HARRIS是一家专业从事广播行业产品的公司．其设计生产的BMXdigital调音台．自带WINDOWS操作系统．功能强大．操作简便．技术指标优异．并且可以全天工作不停机,是一款非常适合广播播出的高档数字调音台。     

理论研究F2BN3多聚体的结构特色和热力学稳定性

在密度泛函理论（DFT）B3LYP/6-311+G*水平上计算研究了叠氮二氟硼多聚体(F2BN3)n (n=1-4),获得了它们的结构和热力学性质,讨论了几何参数随聚合度的变化趋势。多聚体(F2BN3)2-4的优化构型均为由不同子体系的叠氮基α−N和B原子相连形成的环状结构。三聚体的船扭式构象比椅式构象的结合能低10.54 kJ•mol-1;四个新获得的四聚体的结合能差异较大,大小为3.1~45.65 kJ•mol-1。由焓变可知,单体形成二聚体在热力学上是不利的,而形成三聚体和四聚体在高达1200 K的温度下是有利的,同时分析比较了后续反应的热力学参数。     

梳状齿环形压电振子振动的有限元分析

利用有限元法对具有梳状齿的环形电压振子进行了计算,分析了行波马达不同结构参数对压电振子动态特性的影响,绘制了各参数对压电振子固有频率的影响曲线,进行了马达试验,分析结果与试验结果基本符合,可作为这种振子设计的依据。     

宽带宽方向双倒F 振子天线设计

本文采用双倒F 振子天线（DIFA）结构设计一种宽带宽方向图天线。双倒F 振子天线不但具有单倒F 振子天线低轮廓、宽波束优点,还具有较宽的阻抗带宽特性。实测显示单元双倒F 振子天线在驻波比小于1.8 的情况下,阻抗带宽大于25%,在0°±85°区域内天线方向图增益≥-2dB。     

基于小波分析的高空大气湍流相干结构特征研究

通过对风速脉动和温度脉动数据进行谱分析和小波分析,得到不同高度大气湍流相干结构尺度,用来同时识别时间序列中相干结构的特征尺度,并与大气折射率结构常数Cn2相结合分析高空大气湍流强弱分层的相干结构特征,提取不同高度湍流层强度、湍流层厚度等空间特征。通过研究发现,随着高度的变化,湍流呈现强弱分层交替出现的空间特征,且随高度升高,湍流持续时间变短,湍流层厚度也变小;在大尺度的弱湍流背景下存在小尺度强湍流,分布相对密集,持续时间较短,厚度也较小。高空大气湍流在5~15 km上的存在明显的强弱分层现象,在6~10 km高度上有四个强湍流层,湍流层厚度约为500 m。     

The isolated critical value phenomenon in local－global riddling bifurcation

A chaotic synchronized system of two coupled skew tent maps is discussed in this paper. The locally and globally riddled basins of the chaotic synchronized attractor are studied. It is found that there is a novel phenomenon in the local－global riddling bifurcation of the attractive basin of the chaotic synchronized attractor in some specific coupling intervals. The coupling parameter corresponding to the locally riddled basin has a single value which is embedded in the coupling parameter interval corresponding to the globally riddled basin, just like a breakpoint. Also, there is no relation between this phenomenon and the form of the chaotic synchronized attractor. This phenomenon is found analytically. We also try to explain it in a physical sense. It may be that the chaotic synchronized attractor is in the critical state, as it is infinitely close to the boundary of its attractive basin. We conjecture that this isolated critical value phenomenon will be common in a system with a chaotic attractor in the critical state, in spite of the system being discrete or differential.     

正丙醇-水体系中SbI4-与U（Ⅶ）、Ce3+、Co2+和Ag+的析相萃取分离

研究了正丙醇-水体系析相萃取分离和富集SbI4-的行为及其与一些金属离子分离的条件。实验表明,控制pH为2,能使SbI4-与U()、Ce3+、Co2+和Ag+分离。     

AlGaN/GaN型气敏传感器对于C0的响应研究

研究了基于AlGaN/GaN型结构的气敏传感器对于C0的传感性.制备出AlGaN/GaN型气敏传感器器件,并测试得到了器件在50℃时对于不同浓度(1%,9000,8000,5000和1000ppm)的C0的响应情况;测试并分析了1%CO在50和100℃下响应度的差异,计算了通人1%CO前后器件的肖特基势垒高度的变化和灵敏度随电压的分布关系.结果表明,器件的灵敏度强烈依赖于器件的工作温度和通入的气体浓度,随着温度和浓度的增加,器件的灵敏度呈单调增加,器件在100℃空气气氛中表现出了良好恢复性能.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.