电信英语及其缩略语解释（二十八）

DSR Dynamie Souree Routing 动态源路由DSRC DedieatedS}lort Range Comrnunieation 专用短程通信nSRS Data Signal Rate Seleetion 数据信号速率选择DSS Data Storage System 数据存储系统DSS Deeision Support System 决策支持系统DSS Digital Satellite System 数字卫星系统DSS Digital Signa一ure Standard 数字签名标准 这是用于电子商务的安全标准。DSS Digital Subseriber Serviee 数字用户业务DSS Direet Satellite System 直播卫星系统DSS Direetory Serviee System 目录服务系统DSSI Digital Subser…     

Ohmic Radio-Frequency Synergy Current Drive and Transformer Recharging Experiments in the HT-7 Tokamak

Lower hybrid current drive (LHCD) experiments for investigating the interaction between lower hybrid (LH) wave and residual dc electric field were performed in extensive plasma parameter ranges in the HT-7 superconducting tokamak. The experimental results are well fitted to the Karney-Fisch theory on the efficiency of LH waves energy converted to poloidal magnetic field energy. The fraction of absorbed LH power is about 0.75 for the HT-7 machine, and the upshift of the LH-wave parallel refraction index during LHCD experiments have been derived by the optimizing fitting parameters. The LH wave is also used for the transformer recharging when the plasma current is maintained unchanged. The highest efficiency about 7% has been achieved in HT-7 machine.     

Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.     

系列类立方烷型Fe4S4簇合物的XPS分析

对7种类立方烷型Fe_4S_4簇合物进行了XPS分析,得到了中心离子Fe的价态,给出了系列Fe_4S_4中骨架硫的结合能,由峰合成结果给出各种S、N的比例与按结构式计算的结果相同。     

数律条条美绝伦——2~(i/2)、π&e趋论,兼为火星大冲年而作

1　引论我们先引述古希腊最著名的评论家Proclus(普洛克努斯 )的一句名言 :哪里有数 ,哪里就有美 .———Proclus然而在那无穷多个数中比下述三个基本常数2、π&e更有名的数恐怕是寥寥无几了 .最近《数学传播》季刊发表了本文作者之一的一篇论文“高斯函数和它的一个现实原型” ,公布了 2的一个“优美比”① :22 =1 - 13+ 15 - 17+ 19- 11 1 +…1 + 13- 15 - 17+ 19+ 11 1 -…或2 =1 + 13- 15 - 17+ 19+ 11 1 -…1 - 13+ 15 + 17- 19- 11 1 +….从而由圆周率π的Gregory—Leibniz(格雷戈里—莱布尼茨 )展式 ,以及对数函数的幂级数展式 ,把…     

有消费或投资的华氏宏观经济模型

本文对华罗庚教授的宏观经济模型进行了推广 ,在原来模型的基础上 ,分别增加了消费、投资 ,得到两种不同的模型 ,并对模型具有经济意义的解进行了研究     

数律条条美绝伦--√2、π&e趋论,兼为火星大冲年而作

1引论 我们先引述古希腊最著名的评论家Proclus(普洛克努斯)的一句名言: 哪里有数,哪里就有美.     

Measurements of Boundary Plasma in Synergy Discharges of IBW and LHCD on the HT-7 Tokamak

By applying ion Bernstein wave (IBW) heating into the lower hybrid current drive (LHCD) plasma, improved confinements have been obtained in the HT-7 tokamak. The central electron temperature was doubled and the storage energy was increased significantly. The core electron density and temperature were broadened and ther profiles near the edge were steepened. A transport barrier has been formed in the vicinity of the limlter radial location. An enhanced shear in poloidal phase velocity was found in the same region with reduction of the fluctuation levels and the coherences between fluctuations. The results suggest that the improved confinement in the IBW and LHCD plasma is at least partially due to the modification of shear in poloidal velocity and then the suppression of fluctuations and fluctuation induced fluxes via de-correlation effect.     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.