TIME DECAY BEHAVIOR OF FULLERENE-C60 STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE

The time-resoved photoluminescence spectra of C₆₀ have been studied from toluence solution at room temperature and from thin film at both room temperature and 77K. A photoluminescence peak at about 730nm was detected from solution at room temperature and film at 77K, in which lifetimes waz determined to be 1.1 and 0.9ns, respectively. At room temperature, the photoluminescence peak of thin film shifted to 740 nm with fast decay behavior which was fitted well to a double-exponential lifetimes with τ₁ = 0.087ns, τ₂= 0.68 ns. Two relaxation mechanisms are given tentatively in explaining this phenomenon.     

STUDIES ON THE DYNAMICS OF OPTICAL BISTABILITY SWITCHING IN THE INTERNAL FABRY-PEROT CAVITY WITH A CdSxSe1-x-DOPED GLASS CHANNEL WAVEGUIDE

We report the optical bistability in CdS_xSe_1-x-doped glass channel waveguide with rise and fall times of about 24 and 30ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3mW. The third-order nonlinear susceptibility (x⁽³⁾) of CdS_xSe_1-x-doped glass is estimated experimentally to be 1.8×10^-9 esu. The high speed switching and the value of x⁽¹⁾ show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.     

InGaAs/GaAs微结构中的载流子动态特性研究

InGaAs/GaAs拉晶格量子阱材料是一种应变型微结构材料,随着结构参数与三元层成份的变化,微结构的电学及光学特性也随之而变,因此有很大的应用前景。 我们对于In_xGa_(1-x)As/GaAs单量子阱材料进行了光致发光谱和时间分辨光致发光谱的研究。 实验所用的仪器包括同步泵浦染料激光器,配合高重复率条纹相机系统,输出的高重复率激光脉冲亮度在10皮秒左右,接收器可以接收1.35eV以上的发光谱。