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A multi-layer damper with waved plates under one-axial load is considered. A method of theoretical calculation of its energy dissipation coefficient is proposed. An experimental research of own frequencies and vibration transfer ratios for different parameters of damper structure, harmonic vibration load and random load is performed. Results of this research are approximated by functions; it is possible to use these functions for the calculation of the damper too. 相似文献
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为了克服现有复杂网络鲁棒性研究模型只考虑节点失效的局部影响性和网络拓扑鲁棒性的缺陷, 提出了一种利用节点效率来评估复杂网络功能鲁棒性的方法. 该方法综合考虑节点失效的全局影响性, 利用网络中节点的效率来定义各节点的负载、极限负载和失效模型, 通过打击后网络中最终失效节点的比例来衡量网络的功能鲁棒性, 并给出了其评估优化算法. 实验分析表明该方法对考虑节点负载的复杂网络功能鲁棒性的评定可行有效, 对于大型复杂网络可以获得理想的计算能力. 相似文献
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基于云电视的数字图书馆服务比传统数字图书馆服务有优势。图书馆要利用云电视的图书馆服务来开展远程教育服务,向用户发布信息,以及进行信息理疗和为特殊读者服务,以满足用户多元化的信息需求。 相似文献
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Multimode fiber has a richer spatial dimension than single-mode fiber, and is an ideal platform for studying many novel nonlinear effects. We established a strong linear coupling and short-range fiber model to understand the interactive effects of linear coupling and nonlinear effects. We find that strong linear coupling can compensate for the group delay between eigenmodes and cause energy fluctuation between modes which weakens the nonlinear effects. In high energy pulses, the interaction of linear coupling and nonlinear effects can help producing weak dispersion waves when the spectrum is broadened. Since linear coupling in a mode group is common and unavoidable, these results may provide a certain theoretical explanation for multi-mode nonlinear phenomena. 相似文献
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We perform a theoretical study of the effects of the lightly doped drain (LDD) and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors (TFETs). The models are based on non-equilibrium Green's functions (NEGF) solved self-consistently with 3D-Poisson's equations. For the first time, hetero gate dielectric and single LDD TFETs (SL-HTFETs) are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p + 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications. 相似文献