仲态电子偶素湮没辐射能量的改进测量

用充氧气的气凝硅胶作仲态电子偶素源,用¹⁹²Ir精密γ能量作标准,以时间选择能谱仪和滑动比较法改进测量仲态电子偶素2γ湮没能量,得到hv=510995.34±0.69eV.经电子偶素结合能修正,得正、负电子对静止质量,与电子质量比较,表明正、负电子质量在1.4ppm内一致.     

纳米级铜原子团簇具有红外吸收特性的实验验证

在文献［１］中荷清泉提出了纳米级铜原子团簇具有红外吸收特性的理论。本文采用磁控溅射低温液氮收集方法制备了纳米级铜原子团簇，并用红外光谱法测定其吸收红外光的性能，结果表明纳米级钢原子团簇确实具有明显的红外吸收特性，验证了文献［１］中提出的理论预言。     

Pu_2分子的结构与势能函数

用相对论有效原子实势 (RECP)和密度泛函 (B3LYP)方法对Pu2 分子的结构进行了优化 ,对较高多重性优化得到两个平衡结构 ,并用Murrell Sorbie函数导出了基态两种结构的势能函数和光谱数据。     

激光雷达信号随机误差的估算

在分析随机误差来源和激光雷达数据特点的基础上,介绍一种新的随机误差计算方法——噪音比例因子方法.该方法用一次测量数据列中远处背景信号算出噪音比例因子,再由噪音比例因子求出任一距离上有用信号的随机误差.用实测的激光雷达信号进行检验,结果表明,这种方法是可靠且可行的.     

Effect of normalized plasma frequency on electron phase-space orbits in a free-electron laser

Irregular phase-space orbits of the electrons are harmful to the electron-beam transport quality and hence deteriorate the performance of a free-electron laser （FEL）. In previous literature, it was demonstrated that the irregularity of the electron phase-space orbits could be caused in several ways, such as varying the wiggler amplitude and inducing sidebands. Based on a Hamiltonian model with a set of self-consistent differential equations, it is shown in this paper that the electron- beam normalized plasma frequency functions not only couple the electron motion with the FEL wave, which results in the evolution of the FEL wave field and a possible power saturation at a large beam current, but also cause the irregularity of the electron phase-space orbits when the normalized plasma frequency has a sufficiently large value, even if the initial energy of the electron is equal to the synchronous energy or the FEL wave does not reach power saturation.     

Analysis of each branch current of serial solar cells by using an equivalent circuit model

In this paper,based on the equivalent single diode circuit model of the solar cell,an equivalent circuit diagram for two serial solar cells is drawn.Its equations of current and voltage are derived from Kirchhoff’s current and voltage law.First,parameters are obtained from the I–V(current–voltage)curves for typical monocrystalline silicon solar cells(125 mm×125 mm).Then,by regarding photo-generated current,shunt resistance,serial resistance of the first solar cell,and resistance load as the variables.The properties of shunt currents(Ish1and Ish2),diode currents(ID1and ID2),and load current(IL)for the whole two serial solar cells are numerically analyzed in these four cases for the first time,and the corresponding physical explanations are made.We find that these parameters have different influences on the internal currents of solar cells.Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.     

Simulation of energy scan of pion interferometry in central Au+Au collisions at relativistic energies

We present a systematic analysis of two-pion interferometry for the central Au+Au collisions at √s_NN=3, 5, 7, 11, 17, 27, 39, 62, 130 and 200 GeV/c with the help of a multiphase transport (AMPT) model. Emission source-size radius parameters R_long, R_out, R_side and the chaotic parameter λ are extracted and compared with the experimental data. Transverse momentum and azimuthal angle dependencies of the HBT radii are also discussed for central Au+Au collisions at 200 GeV/c. The results show that the HBT radii in central collisions do not change much above 7 GeV/c. For central collisions at 200 GeV/c, the radii decrease with the increasing of transverse momentum p_T but are not sensitive to the azimuthal angle. These results provide a theoretical reference for the energy scan program of the RHIC-STAR experiment.     

Strain Induced Nanopillars and Variation of Magnetic Properties in La_(0.825)Sr_(0.175)MnO_3/LaAlO_3 Films

To investigate the process of strain relaxation and resultant variation of microstructure and magnetic properties,low-doped La_(0.825)Sr_(0.175)MnO_3 epitaxial films with different thicknesses are deposited on LaAlO_3 substrates and strain induced nanopillars are discovered inside the La_(0.825) Sr_(0.175)MnO_3 film. Perpendicular oriented nanopillars mainly exist below 30 nm and tend to disappear above 30 nm. The distribution of nanopillars not only induce the variation of lattice parameters and local structural distortion but also lead to the deviation of easy magnetization axis from the perpendicular direction. Specifically, the out-of-plane lattice parameters of the film decrease quickly with the increase of the thickness but tend to be constant when the thickness is above 30 nm. Meanwhile, the variations of magnetic properties along in-plane and out-of-plane directions would also decline at first and they then remain nearly unchanged. Our work constructs the relationship between nanopillars and magnetic properties inside films. We are able to clearly reveal the effects of inhomogeneous strain relaxation.     

光纤耦合LD光束特性及其对振荡光模式的影响

基于菲涅耳-基尔霍夫衍射积分理论,研究了端面泵浦固体激光器中泵浦源——LD阵列光纤耦合模块的输出光空间特性,及其对振荡光特性的影响。结果显示:LD阵列光纤耦合模块的输出光强分布不平滑,呈多尖峰分布,尖峰位置对LD光束指向角敏感,随指向角、空间排布等因素的变化而变化,是多种因素综合作用的结果;具有尖峰结构的泵浦光场对振荡光横模结构有直接影响,泵浦光尖峰位置越居中,光强径向分布曲线在轴心处越凸起,振荡光光束质量越好,越凹陷,振荡光光束质量越差,在激光器设计中应有针对性地具体考虑应对措施。     

AlN插入层对硅衬底GaN薄膜生长的影响

利用金属有机化合物气相外延沉积技术在2inch(5.08cm)Si(111)图形衬底上生长了GaN外延薄膜,在Al组分渐变AlGaN缓冲层与GaN成核层之间引入了AlN插入层,研究了AlN插入层对GaN薄膜生长的影响。结果表明,随着AlN插入层厚度的增加,GaN外延膜(002)面与(102)面X射线衍射摇摆曲线半峰全宽明显变小,晶体质量变好,同时外延膜在放置过程中所产生的裂纹密度逐渐减小直至不产生裂纹。原因在于AlN插入层的厚度对GaN成核层的生长模式有明显影响,较厚的AlN插入层使GaN成核层倾向于岛状生长,造成后续生长的nGaN外延膜具有更多的侧向外延成分,从而降低了GaN外延膜中的位错密度,减少了GaN外延膜中的残余张应力。同时还提出了一种利用荧光显微镜观察黄带发光形貌来表征GaN成核层形貌和生长模式的新方法。