含圆孔纳米薄膜在拉伸加载下变形机理的原子级模拟研究

采用分子静力学方法结合量子修正的 Sutton-Chen多体势研究了含圆孔的纳米薄膜在单向加载过程中的力学行为,并采用共近邻分析方法研究了薄膜的微结构演化过程.模拟结果表明：孔洞的引入显著地降低了纳米薄膜的杨氏模量和屈服应力;在拉伸过程中,孔洞的形状随着应变的增加逐渐由圆形变为椭圆形,最终孔洞闭合;纳米薄膜在进入塑性变形阶段后,薄膜内部出现原子的堆跺层错,这种层错结构的出现是肖克莱不全位错在薄膜内部沿着{111}面的［112］方向运动的结果. 关键词： 纳米薄膜 力学性质 位错 分子静力学     

基于激光成丝的太赫兹时域光谱系统研究综述

太赫兹时域光谱(THz-TDS)技术是一种使用相干探测的频谱分析手段。THz-TDS系统集太赫兹波发射器与探测器于一体,通过相干探测,可以同时获取太赫兹脉冲的电场强度和相位信息,广泛用于生物、材料、安检等领域。超快激光成丝产生太赫兹波是当前产生宽频谱、高强度太赫兹辐射的一个重要途径。文章详细介绍了超快激光成丝辐射太赫兹波的主流物理机制以及增强、调控太赫兹波的主要方法,阐述了基于激光成丝的THz-TDS系统的探测原理和探测手段。     

基于孪生神经网络的两阶段目标跟踪方法

深度学习技术使目标跟踪的精度和鲁棒性得到了很大提高,基于孪生网络的跟踪方法通过在大规模数据集上进行训练,使模型能应对目标的各种形变,缺点是无法排除相似目标的干扰。为此,提出了一种基于孪生网络的两阶段目标跟踪方法。首先,采用修改后的残差网络提取性能更优的深度特征。区域建议网络通过相关滤波调制自适应更新模板,结合时域信息过滤掉易区分的负样本;然后,通过感兴趣池化层提取候选区域固定尺度的特征,并馈送到验证网络进行更精细的分类与回归。为了提升网络对高难度样本的区分能力,采用正负样本对联合训练的方式提高特征匹配的性能。在OTB100、VOT标准测试集和UAV123无人机航拍数据集上进行了评测,实验结果表明:所提方法能明显改进基准算法的性能。     

140 GHz兆瓦级回旋管高斯模式输出窗设计

根据热核聚变用140 GHz回旋振荡管研制需要,对高斯模式输出窗进行研究。以化学气相沉积金刚石作为输出窗片的材料,通过理论分析,优化设计出低反射、低吸收高斯模式输出窗片的尺寸,获得窗片半径和厚度分别为46 mm和1.8 mm。通过理论分析各参数对高斯模式透射率的影响,并利用FEKO软件进行计算验证,获得高斯模式输出窗设计参数,从而为热核聚变用回旋振荡管的研究打下技术基础。     

Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies always have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor (pHEMT) to detect trace amounts of Pb²⁺. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb²⁺ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions.     

光谱法研究人发,指出中锰,镍含量 变化曲线的特征

在近１０年内按季度收集了同一个人的头发样品３３份和指甲样品,４１份,应用火焰原子吸收光谱法测定了人发和指甲中的锰和镍含量,并分别绘制锰和镍随时间（年）变化曲线,获得锰含量波动范围;人发中０．２１００－１．５００μｇ／ｇ、指甲中０．８３００－２．３９１μｇ／ｇ;镍含量波动范围;人发中０．４９００－１．７５０μｇ／ｇ、指甲中１．１７９－４．１８４μｇ／ｇ。含量变化曲线均具有非线性特征。     

Enrichment and separation of rebaudioside A from stevia glycosides by a novel adsorbent with pyridyl group

The adsorptive capacity and selectivity of a novel adsorbent with pyridyl group toward stevia glycosides were studied. The effect of polarity and physical structure of the sorbent on the selectivity was investigated in detail. Two separation methods were applied in the enrichment of rebaudioside A(RA). They were selective elution using methanol or ethanol solution as solvent, and dynamic chromatographic separation using pyridyl resin with high selectivity. Results show that the chromatographic separation method can effectively enrich RA from stevia glycoside with high content of stevioside.     

应变调控单层氧化锌能带结构的第一性原理研究

采用基于密度泛函理论的第一性原理计算对单层ZnO薄膜能带结构的应变调控进行了研究.计算结果表明:沿着之字形方向的压缩应变和扶椅形方向的拉伸应变对薄膜带隙的调控都是线性的,而且带隙调控的范围最大;相反地,在沿着之字形方向的拉伸应变和扶椅形方向的压缩应变的调控下,带隙则呈现出非线性的变化.对于双轴应变的拉伸与压缩,带隙的变化都是非线性的.这种通过不同的应变加载方式来实现对带隙不同程度的调控,对ZnO薄膜在光学和催化等领域的应用具有重要的指导意义.     

性能优异的FEC技术:LDPC码的性能差异与分析

对前人得到的性能良好的规则LDPC码和不规则LDPC码进行仿真分析,分别得到性能曲线。结合规则码和不规则码的特点,并从译码BP算法、校验矩阵结构、环(circle)、误码平台(errorfloor)及可实现性等角度进行比较,分析了导致性能差异的原因,进而对构造在光通信系统中具有实用价值的LDPC码提出了看法。     

Photoelectric Property Improvement of 1.0-eV GaInNAs and Applications in Lattice-Matched Five-Junction Solar Cells

GaInNAs with bandgap 1.0 eV is a promising material for multi-junction solar cell applications. However, the poor quality of GaInNAs grown by metalorganic chemical vapor deposition hinders its device performance. Here to reap the benefits of 1.0-eV sub-cell, we focus on the optimization of annealing temperature and growth ambient of GaInNAs. The GaInNAs sub-cell exhibits a concentration reduction of shallow level defects when it is annealed at 700℃ for 20 min. As compared with the growth case using a hydrogen ambient, the N incorporation efficiency of GaInNAs can be enhanced during the growth in an N_2 ambient. Furthermore, background carbon concentration is observed to reduce in the as-grown GaInNAs epilayer. A GaInNAs sub-cell with 82% peak external quantum efficiency is obtained in a dual-junction GaInNAs/Ge solar cell. Finally, a monolithic Al Ga In P/Al Ga In As/Ga In As/GaInNAs/Ge five-junction solar cell is grown for space application. The fabricated device shows a conversion efficiency of 31.09% and a short-circuit current density of 11.81 m A/cm~2 under 1 sun AM 0 illumination.