20 mm厚316LN不锈钢板的超高功率光纤激光自熔焊

采用20kW超高功率光纤激光器单道焊接了20mm厚316LN奥氏体不锈钢,研究了焊接工艺参数对焊缝成形及宏观形貌的影响,并对焊接接头的显微组织和力学性能进行了分析。结果表明,采用负离焦可以得到成形良好的焊缝;焊缝组织为单一的奥氏体组织,焊缝上部和底部中心区存在等轴晶粒,焊缝中部中心区为粗大的柱状晶。在优化的工艺参数下,焊接得到的接头抗拉强度为645 MPa,与母材相当。焊接接头断裂于熔合线边界处,为典型的韧性断裂。焊接接头热影响区的显微硬度略高于焊缝和母材。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Realization of Toffoli gate operation using four-level atoms in cavity QED system

This paper proposes a scheme for realization of a three-qubit Toffoli gate operation using three four-level atoms by a selective atom--field interaction in a cavity quantum electrodynamics system. In the proposed protocol, the quantum information is encoded on the stable ground states of atoms, and atomic spontaneous emission is negligible as the large atom--cavity detuning effectively suppresses the spontaneous decay of the atoms. The influence of the dissipation on fidelity and success probability of the three-qubit Toffoli gate is also discussed. The scheme can also be applied to realize an N-qubit Toffoli gate and the interaction time required does not rise with increasing the number of qubits.     

Large-Quantity Synthesis of Single-Crystalline Metal Indium Nano/Sub-Micron Wires

Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAlN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.     

甲磺酸培氟沙星与氯冉酸的荷移反应

利用甲磺酸培氟沙星与氯冉酸在甲醇介质发生荷移反应,建立了荷移分光光度法测定甲磺酸培氟沙星含量的方法。结果表明,荷移反应生成1∶1型配合物,最大吸收波长为530nm,甲磺酸培氟沙星线性范围为2.25×10-8—3.38×10-6mol/L浓度内,回收率为98.7%—101.4%。     

基于CC430的无线油田监控系统设计

针对有线油田监控系统成本高、布线困难、维护难度大等问题,提出了一种基于CC430和SimpliciTI协议的无线自组织网络的油田监控系统方案,并在现有硬件基础上增加功率放大电路,扩展系统的监测范围。为了加强网络的安全性,提出一种频率跳变与信息加密相结合的网络协议信息安全管理机制,通过实际组网测试,验证该方案的可靠性和稳定性。     

低时延RS-CC级联码的设计与实现

为提高手持无线电台的纠错和时延特性,考虑设计一种短码长RS-CC级联码.通过对Reed-Solomon码缩短和截断以及对卷积码删余,提出了一种低时延的级联码设计方案,并进行性能分析和软硬件实现.结果表明,在高斯信道下,当Eb/No达到4.2 dB时,能够实现10-4的误码率性能.设计的RS-CC级联码码长较短,编解码固有时延低,译码速度提升30％,适合低时延应用.     

改进的模糊神经网络及其在人脸识别中的应用

对基于模糊神经网络的人脸图像分类器进行研究.将多输入单输出模糊推理系统改造成多输入多输出的模糊神经分类器,并提出了一种改进的模糊神经分类器,改进模型的计算量明显减少.在将模糊规则库与训练样本集对应的基础上提出了一种模糊隶属函数参数的初始化方法.该初始化方法的优点在于它充分利用了训练样本所包含的鉴别信息.在ORL人脸的原始图像空间中用上述方法设计分类器,获得了较好的实验结果.     

基于高斯混合带势概率假设密度滤波器的未知杂波下多机动目标跟踪算法

多模型的随机有限集(RFS)类方法是一类有效的多机动目标跟踪算法,但是现有算法都假定杂波统计特性先验已知,不适用于未知杂波背景。该文以高斯混合带势概率假设密度滤波器(GMCPHDF)为基础,提出一种未知杂波下的多机动目标跟踪算法。该算法对目标和杂波分别独立建模,通过最优高斯(BFG)估计方法对真实目标的强度函数进行预测,从而使多目标强度函数独立于机动目标的运动模型,实现各时刻真实目标的强度函数、杂波源期望个数以及真实目标和杂波源的混合势分布的迭代。仿真结果表明,该算法能够有效地联合估计多机动目标状态以及杂波期望个数。     

纳米金刚石薄膜的光学性能研究

用热丝化学气相(HFCVD)法在硅衬底上制备了表面光滑、晶粒致密均匀的纳米金刚石薄膜,用扫描电镜(SEM)和原子力显微镜(AFM)观测薄膜的表面形貌和粗糙度,拉曼光谱表征膜层结构,紫外-可见光分光光度计测量其光透过率,并用椭圆偏振仪测试、建模、拟合获得了表征薄膜光学性质的n,k值.结果表明薄膜的晶粒尺寸在100nm以下,表面粗糙度仅为21nm;厚度为3.26(m薄膜在632.8nm波长处的透过率为25%,1100nm波长处达到50%.采用直接光跃迁机制估算得到纳米金刚石薄膜的光学能隙(Eg)为4.3 eV.