一类单边截断型分布族参数的经验Bayes检验

讨论一类单边截断型分布族位置参数的经验Ｂａｙｅｓ检验问题，文中构造了经验Ｂａｙｅｓ判决函数，证明了它具有渐近最优的性质，并且获得了收敛速度。     

一种快速高效MPEG-4运动估计硬件结构的研究和实现

提出一种高度并行和多流水线处理的硬件结构,实现MPEG-4视频部分的全搜索块匹配运动估计算法.该硬件结构能实时地通过全搜索块匹配运动估计算法来搜索每个像素块最佳匹配运动向量,具有计算速度高、运动向量准确、较少的内置存储器要求、低运行时钟和低功耗等诸多优点,从而可满足移动视频业务和高清晰视频业务的需求.该硬件结构基于富士通的CE66库实现.     

激光在大气中传输衰减特性研究

激光在大气中传输特性的研究是激光探测与制导、激光通信等光电系统设计中的一个主要问题.利用衰减的经验模型和Mie理论,分别计算了不同大气能见度下的霾粒子对激光大气传输产生的衰减,并对这两种方法计算的结果进行比较分析;再根据Mie理论和云雾的尺度分布模型计算了云雾的激光衰减.结果表明,在近红外波段对于对流层大气中霾粒子的衰减预测应用Mie理论计算更合理;云雾引起的衰减一般较大,并且随着能见度的减小,衰减增加较快.因此,当Vb＜15km时,霾引起的衰减需要考虑;当Vb较小时,云雾的激光衰减是限制系统性能的主要因素.     

采用TDLAS技术的玉米种子活力快速无损分级检测

如何快速、无损地检测种子活力是目前种子研究领域的热点和难点。基于种子呼吸与种子活力的关系搭建了基于可调谐半导体激光吸收高光谱(TDLAS)技术的种子活力快速无损检测系统,该系统主要由分布反馈式激光器及其控制电路、光电转换及放大电路、数据采集电路、上位机软件以及基于多次反射池结构的种子呼吸CO_2浓度检测池构成。检测池的容积为1.5 L,光程为16 m,激光光源波段为2004 nm。基于朗伯比尔定律,采用波长调制吸收光谱技术利用二次谐波反演出种子呼吸过程中产生的CO_2浓度。根据种子呼吸CO_2浓度的大小确定种子活力的强弱,并将其与发芽出苗实验获得的活力指数进行对比。实验结果表明:CO_2呼吸强度的变化量与种子活力等级指数的相关性在0.9以上,即基于TDLAS技术的种子活力快速无损检测系统能够精准、无损、高效地反映种子活力的强弱。这一研究为采用TDLAS技术进行种子活力无损检测分级提供了有益探索。     

凝胶注模法制备热释电PLCT陶瓷研究

为探索无毒性凝胶注模成型法在制备热释电陶瓷方面中的应用,对Pb0.8La0.1Ca0.1TiO3(PLCT)热释电材料的成型实验、水解液配置、烧结温度对介电性能和热释电性能的影响进行了研究。结果表明:乙醇含量为3%,水解液pH值为2,烧结温度为1 150℃时,烧结成的PLCT热释电陶瓷性能最优,其平均热释电系数达8.0×10-4C/m2.℃,而探测率优值高达7.65×10-5Pa-0.5。     

环Zn上椭圆曲线的群法则及其在Paillier系统中的应用

本文研究了定义在环Zn上椭圆曲线E的有理点集E(Zn)的群的定义法则,以及这类椭圆曲线在密码学上的应用.我们给出了环Zn上椭圆曲线明确的点加公式,使得E(Zn)形成一个交换群,从理论上清晰地解决了以往在该类曲线上某些点相加不能定义的问题.为了在密码学上方便地应用这类椭圆曲线,还给出了在该加法法则下的E(Zn)的群结构....     

20 mm厚316LN不锈钢板的超高功率光纤激光自熔焊

采用20kW超高功率光纤激光器单道焊接了20mm厚316LN奥氏体不锈钢,研究了焊接工艺参数对焊缝成形及宏观形貌的影响,并对焊接接头的显微组织和力学性能进行了分析。结果表明,采用负离焦可以得到成形良好的焊缝;焊缝组织为单一的奥氏体组织,焊缝上部和底部中心区存在等轴晶粒,焊缝中部中心区为粗大的柱状晶。在优化的工艺参数下,焊接得到的接头抗拉强度为645 MPa,与母材相当。焊接接头断裂于熔合线边界处,为典型的韧性断裂。焊接接头热影响区的显微硬度略高于焊缝和母材。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Realization of Toffoli gate operation using four-level atoms in cavity QED system

This paper proposes a scheme for realization of a three-qubit Toffoli gate operation using three four-level atoms by a selective atom--field interaction in a cavity quantum electrodynamics system. In the proposed protocol, the quantum information is encoded on the stable ground states of atoms, and atomic spontaneous emission is negligible as the large atom--cavity detuning effectively suppresses the spontaneous decay of the atoms. The influence of the dissipation on fidelity and success probability of the three-qubit Toffoli gate is also discussed. The scheme can also be applied to realize an N-qubit Toffoli gate and the interaction time required does not rise with increasing the number of qubits.     

Large-Quantity Synthesis of Single-Crystalline Metal Indium Nano/Sub-Micron Wires

Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAlN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.