InGaAsP／InP异质结构材料X射线衍射摇摆曲线中的干涉指纹研究

双晶衍射摇摆曲线的全面分析需用计算机模拟高木方程能得到，其信息广但不直观。本文讨论了ＭＯＣＶＤ外延片Ｘ射线衍射中的干涉指纹，指出了用干涉指纹测试簿膜厚度的精确性，讨论了干涉指纹出现的一些特征，使能直观地得到一些外延片的结构信息，为识别和正确使用干涉指纹估算簿层厚度提供依据。     

急性低氧条件下人脑电图的变化及低氧耐受能力与高山适应能力的关系

本文研究了低压舱急性低氧条件下,人的脑电图变化、低氧耐受能力与高山适应能力之间的关系,并根据18名受试者的测量结果,证明它们之间关系密切。     

基于模糊图像合成的微结构平面运动测量技术

动态测试技术在MEMS研发过程中具有极为重要的作用。本文在机器微视觉的MEMS动态测试系统的基础上,基于模糊图像合成技术对MEMS谐振器的运动特性如谐振器的运动幅度、谐振频率f及品质因数Q等重要参数进行了测试,并给出了实验结果。     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

EPSON STYLUS Photo 720

具有良好的文本和图像打印质量,而且维护也比较简单,还附带有简单、易用的驱动软件,适合公司和家庭使用。     

尼康CoolPix 800数码相机

操作简便而轻巧.又可以采用专用鱼眼镜.广角镜和远摄镜.加上Nikon在造相机领域的名气.CoolPix 800是家用数码相机的良好选择。     

硅中Mo-B络合物性质的理论研究(英文)

Recently, considerabl experimental studies have become available for the 3d transition metal-group ⅢA acceptor complex pair in silicon. Our experimental investigations on 4d transition metal impurities in silicon showed that the interstitial 4d atoms are also easy to move in silicon and to form complexes with other point defects. We have studied the electronic states of the substitutional boron-interstitial molybdenum complex in silicon. The self consistent field calculations were performed by using the SW-Xα theory within the framework of the Watson-sphere-terminated molecular-cluster method. Based on the obtained charge distribution of the system, there is no clear indication to show a transfer of one electron from Mo to B as assumed in the ionic model which has been generally accepted in describing the interaction between a substitutional ⅢA group acceptor atom and an interstitial TM atom.     

Genius 50X光驱

安装简便,性能良好,读盘能力强.具有非常好的性能价格比。     

HP DeskJet 610C

经济实惠,使用简单,可靠耐用,能够满足用户基本的彩色打印需求。我们这次测试HP DeskJet 610C