运用认知冲突转变电学中的前概念

以文献综述的方式解释概念转变的含意，指出物理概念转变的困难所在，提出解决概念转变的认知冲突策略，并提供了实施该策略的一些方案．然后列举初学电学的学生中存在的一些前概念，为设计认知冲突策略提供依据．最后阐述运用认知冲突策略时要注意的问题．     

组成论介绍(中):复杂程度和复杂度定律

上期指出每个广义集合都有对应的分布函数 (规律 ) .本文指出 ,利用广义集合的分布函数可以计算出一个体现客观事物的内部状态的丰富程度的物理量 :复杂程度 .如果广义集合具有随机性 ,这个广义集合就符合最复杂原理 ,在一些情况下可以利用这个原理反求得广义集合的分布函数 (公式 ) .1　复杂程度概念“复杂”这个词应用范围很广 ,科学地计量事物的“复杂程度”很重要 .我们利用广义集合定义复杂程度 .Ｎ个个体组成的广义集合中如果标志值有ｋ个不同的值ｘ1,ｘ2 ,… ,ｘｉ,… ,ｘｋ,而与之对应的个体的数量分别为ｎ1,ｎ2 ,… ,ｎｉ,… ,ｎｋ…     

A scanning superconducting quantum interference device microscope for room temperature samples

We have constructed a scanning low-T_c superconducting quantum interference device (SQUID) microscope, in which the SQUID is mounted on the lower end of a copper rod and cooled to liquid helium temperature. There is a 65μm thick sapphire window under the SQUID. The sample at room temperature underneath the window can be scanned to produce magnetic images. The microscope has a spatial resolution of 100－150μm and a magnetic field sensitivity of 3－60pT/$\sqrt{Hz}$ in a magnetically unshielded environment. We have used this scanning SQUID microscope to measure various room temperature samples.     

喷墨打印垂直有机光晶体管及其性能优化

通过旋涂透明源极并在其上采用喷墨打印的方式制备有源层及源漏电极,从而得到一种垂直结构光晶体管,并获得了较好的光电性能,其响应率为～1 500A/W,探测率可达1.6×10~(14) Jones。向有源层中掺杂一定比例的电子捕获材料PCBM,使有源层中光生空穴复合减小,光生电流增大,从而进一步提高其光探测性能。研究发现当掺杂5wt%电子捕获材料时,垂直结构光晶体管性能达到最优,响应率为～6 000A/W,探测率可达1.4×10~(15) Jones.     

光学元件狭缝柔性调节机构的设计与分析

设计了一种狭缝柔性结构的光学元件调节机构,使光学元件在具备较高调节精度的同时,保持较高的导向精度。采用弹性力学应力函数法分析了狭缝柔性结构的刚度,以径向刚度与轴向刚度的比值为目标函数,对狭缝柔性结构尺寸参数进行了优化,在不超过柔性结构材料屈服应力等约束条件下,刚度比最优值达到1 573.6,较大的刚度比值可以减小调节机构的耦合位移,从而提高机构的导向精度。该结构加工装配方便,可实现三自由度(θx-θy-Z)调节。对优化后的柔性结构进行仿真分析,结果表明:径向刚度与轴向刚度比值的仿真值为1 660.4,解析值与仿真值误差为5.23%,证明了刚度分析方法的有效性。优化后的结构,轴向调节行程为2.09 mm,绕x轴偏转角度调节行程为±16.6 mrad,绕y轴偏转角度调节行程可达到±14.4 mrad,满足光学元件调节的大行程要求。     

Investigation of Zn_(1-x)Cd_xO films bandgap and Zn_(1-x)Cd_xO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy

A series of Zn_(1-x)Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition(PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_(1-x)Cd_xO films, x-ray diffraction(XRD),ultraviolet-visible spectroscopy(UV-vis), and x-ray photoelectron spectroscopy(XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn_(1-x)Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration(x)according to the(αhν)~2–hν curve. Furthermore, the band offsets of Zn_(1-x)Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.     

Conceptual design of Hefei advanced light source

The conceptual of Hefei Advanced Light Source, which is an advanced VUV and Soft X-ray source, was developed at NSRL of USTC. According to the synchrotron radiation user requirements and the trends of SR source development, some accelerator-based schemes were considered and compared; furthermore storage ring with ultra low emittance was adopted as the baseline scheme of HALS. To achieve ultra low emittance, some focusing structures were studied and optimized in the lattice design. Compromising of emittance, on-momentum and off-momentum dynamic aperture and ring scale, five bend acromat (FBA) was employed. In the preliminary design of HALS, the emittance was reduced to sub nm·rad, thus the radiation up to water window has full lateral coherence. The brilliance of undulator radiation covering several eVs to keVs range is higher than that of HLS by several orders. The HALS should be one of the most advanced synchrotron radiation light sources in the world.     

同步辐射真空紫外光电离质谱研究乙烯扩散火焰

本文利用探针取样法结合同步辐射真空紫外光电离和分子束质谱技术研究了常压下的乙烯扩散火焰.通过测量光电离质谱和光电离效率谱分辨了该火焰中大部分的燃烧中间体及产物;通过改变探针取样位置以及半定量计算得到了其中部分燃烧中间体及产物的摩尔分数曲线.实验结果为探索多环芳烃和烟尘在扩散火焰中形成的最初阶段的反应机理提供了依据.     

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

利用电子自旋共振波谱（ESR）仪,分析由低压化学气相沉积（LPCVD）法制备的高纯半绝缘4H-SiC材料本征缺陷.结果发现,在暗场条件下获得的缺陷信息具有碳空位（V_C）及其络合物的特征;谱线具有半高宽较大、峰谷明显不对称的特点.分析认为造成ESR谱线半高宽较大及峰谷不对称现象的主要原因是测试温度较高.同时,吸收谱中峰谷不对称现象及较大半高宽现象的出现还与不对称的晶格结构及缺陷浓度的不均匀分布有关.在110 K测试温度下,能级上的电子分布对ESR谱特性影响很小. 关键词： 低压化学气相沉积 高纯半绝缘4H-SiC 电子自旋共振 本征缺陷