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931.
The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure. 相似文献
932.
933.
934.
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
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To form low-resistance Ohmic contact to p-type GaN,
InGaN/GaN multiple quantum well light emitting diode wafers are
treated with boiled aqua regia prior to Ni/Au (5~nm/5~nm) film
deposition. The surface morphology of wafers and the current--voltage
characteristics of fabricated light emitting diode devices are
investigated. It is shown that surface treatment with boiled
aqua regia could effectively remove oxide from the surface of the p-GaN
layer, and reveal defect-pits whose density is almost the same as
the screw dislocation density estimated by x-ray rocking curve
measurement. It suggests that the metal atoms of the Ni/Au transparent
electrode of light emitting diode devices may diffuse into the p-GaN
layer along threading dislocation lines and form additional leakage
current channels. Therefore, the surface treatment time with boiled
aqua regia should not be too long so as to avoid the increase of
threading dislocation-induced leakage current and the degradation of
electrical properties of light emitting diodes. 相似文献
935.
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 总被引:1,自引:0,他引:1
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This paper investigates the major structural parameters,such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition,using an in-plane grazing incidence x-ray diffraction technique.The results are analysed and compared with a complementary out-of-plane xray diffraction technique.The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method.The method for directly determining the in-plane lattice parameters of the GaN layers is also presented.Combined with the biaxial strain model,it derives the lattice parameters corresponding to fully relaxed GaN films.The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established,reaching to a maximum level of-0.89 GPa. 相似文献
936.
This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes.The delay time decreases as the pumping current increases,and the speed of the delay time reduction becomes slower as the current amplitude increases further.Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire.It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action.The traps can be bleached by capturing injected carriers.The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes. 相似文献
937.
Modulation instability of femtosecond pulses in fibres with slowly decreasing dispersion 总被引:2,自引:0,他引:2
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In this paper,we investigate the modulation instability for generating femtosecond pulses in fibres with slowly decreasing dispersion.Higher-order dispersion and higher-order nonlinear effects are taken into account when the continuous wave or quasi-continuous wave evolves into sub-picosecond and femtosecond pulses by modulation instability in the optical fibres.Our research results show that the gain spectrum of the dispersion-decreasing fibres is much wider than that in conventional fibres.The third-order dispersion effect has no contribution to gain spectrum,while the self-steepening effect reduces the maximum value and gain bandwidth,and the Raman self-scattering effect widens the extent to which the modulation instability occurs. 相似文献
938.
939.
弯曲振动型薄板扬声器 总被引:3,自引:2,他引:1
分析了动圈扬声器的性能,讨论了弯曲振动型振膜构成的NXT扬声器及其频率响应和声辐射。薄板扬声器在新世纪中将有发展前途。 相似文献
940.
因导尿管引起的微生物感染严重危害患者健康,并容易导致细菌耐药性。基于纳米材料的抗菌涂层是应对导尿管感染的最有效策略之一。本文利用绿色小球藻自身及其分泌物的还原性环境,制备合成高表面活性的纳米氧化铈Bio-CeO2,能够高效产生活性氧自由基,实现对大肠杆菌、铜绿假单胞菌等致病菌的抑制和杀伤。在这种绿色合成的模拟酶纳米材料基础上,将其与壳聚糖、京尼平等生物基材料协同作用,在导尿管表面构建稳定的抑菌水凝胶涂层。结果显示,包覆有Bio-CeO2水凝胶抗菌涂层的硅胶导尿管比裸导管的抑菌效果显著增强,尤其是在低浓度的过氧化氢溶液环境下,对铜绿假单胞菌的抑菌效率可提升至54%,这为未来新型广谱抗菌导尿管的设计和感染性疾病的预防控制提供了潜在新材料和技术手段。 相似文献