a-Al2O3（0001）表面弛豫及其对表面电子态的影响

在周期边界条件下的，k空间中，采用基于密度泛函理论的局域密度近似平面波超软赝势法，对最外表面终止层为单层Al的a-Al2O3超晶胞(2×2)(0001)表面结构进行了弛豫与电子结构计算研究．结果表明，最外表面Al-O层有较大的弛豫，明显地影响了表面原子与电子结构，布居分析表明表面电子有更大的几率被定域在O原子的周围，表现出O的表面态．进一步分析了表面弛豫前后表面电子密度、态密度变化，表面能级分裂主要来自于O的2p轨道电子态变化．通过对比弛豫前后的表面电子局域函数(ELF)图，分析了表面成键特性．     

脉冲激光沉积制备NiO(111)外延薄膜及其结构研究

采用脉冲激光沉积法(PLD)在具有六方纤锌矿结构的蓝宝石衬底上制备了NiO外延薄膜,研究了沉积温度、氧分压对薄膜结构和形貌的影响。在650℃、20Pa氧分压的条件下制得了高结晶质量的单晶NiO薄膜。高能电子衍射分析发现,该NiO薄膜沿Al2O3[11–20]方向入射的衍射图像为清晰的斑点,说明NiO薄膜的生长模式为岛状模式,薄膜与衬底的外延匹配关系为:(111)[11–2]NiO//(0001)[11–20]Al2O3。     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

后处理工艺对PCT薄膜形貌与结构的影响

采用射频磁控溅射技术,利用快速退火工艺制备出了大面积(φ120 mm)表面光滑、连续、均匀的(Pb,Ca)TiO3(PCT)薄膜。原子力显微镜和X射线衍射分析结果表明,快速退火处理工艺较常规退火处理工艺具有晶化温度低、晶化时间短、薄膜结晶性能好、易与微电子工艺兼容等优点。经500～550快速退火处理后,PCT薄膜已完全形成钙钛矿结构,最佳晶化温度约为550。     

基于多相滤波组的无“盲区”的接收机模型

介绍了利用多相滤波器组对宽带信号信道化的一般原理,在此基础上提出了一种基于双覆盖因子ωk1、ωk2的无"盲区"的数学接收机模型.并推导出此数学模型DFT结构.因此降低了硬件实现的复杂度,工程上更具有实用性.     

Composition-Controlled Low Field Magnetostriction of TbFe Amorphous Films

Amorphous TbFe films are fabricated by dc magnetron sputtering, and their magnetostrictions at low field are examined over a wide range of terbium content （from 32at.% to 70at.%）. It is found that the terbium content plays an important role in the magnetic and magnetostrictive properties of TbFe films. TbFe film soft magnetic properties and low field magnetostriction can be efficiently improved by controlling the terbium at an optimum content. The magnetostriction at lower magnetic field is increased with the increase of terbium content up to 48.2at.%. After reaching the maximum value, further increase of terbium content would result in a great decrease of the low field magnetostriction. By contrast, at higher magnetic field, the magnetostriction is decreased monotonically with the increase of the terbium content.     

基于氮气辅助一步溶液法的高质量钙钛矿太阳能电池光吸收层研制

有机无机杂化钙钛矿太阳能电池因其可调节的带隙、高吸收系数、宽吸收光谱、高载流子迁移率和长电荷扩散长度而被公认为是光伏领域的新希望。然而,采用一步溶液法所制备CH3 NH3 PbI3光吸收层薄膜为树枝状结晶,膜层覆盖率低,大大限制了光电转换效率的进一步提升。本文将氮气引入一步溶液法,通过发挥辅助结晶作用,获得了晶粒均匀且致密的钙钛矿薄膜,并显著提高了钙钛矿太阳能电池的光电转换效率。此外,系统研究了氮气起始时间、气体压强等因素对钙钛矿光吸收层表面形貌及太阳能电池光电转换效率的影响,实验证明氮气起始时间在2~5 s,氮气压强在0.4~0.8 MPa的宽操作窗口范围内,均可制备高质量CH3 NH3 PbI3光吸收层薄膜。     

布喇格反射型宽带单晶薄膜体声波滤波器

该文研究了一种新型布喇格反射型薄膜体声波（BAW）滤波器的设计方法与制备技术。BAW器件选择机电耦合系数较大的Y43° 铌酸锂（Y43° LN)单晶薄膜作为压电层材料,并以苯并环丁烯（BCB）作为晶圆键合层,采用离子注入剥离法将亚微米厚度的Y43° LN单晶薄膜转移至具有布喇格反射层的衬底。BCB既作为键合层,也作为布喇格反射层的第一低声阻抗层,实现了单晶BAW滤波器的制备。设计并制备了三阶BAW滤波器,中心频率为2.93 GHz,绝对带宽和分数带宽分别为247 MHz和8.4%。结果表明,采用薄膜转移技术制备的高机电耦合系数LN单晶薄膜能够实现大带宽BAW滤波器的制备。     

THEORETICAL CALCULATION ON THE PAIR POTENTIALS BETWEEN LIGHT RARE-EARTH METALLIC ATOMS

In order to calculate the pair potentials between light rare-earth metallic atoms with double hexagonal close-packed (dhcp) crystal structure, a M?bius inversion transform formula for the dhcp structure is proposed. The pair potentials for the light rare-earth atoms are calculated by this formula. These pair potentials are fitted to the analytic Morse-type potential expressions.     

厚膜永磁阵列表面磁场分布研究

厚膜永磁阵列是近年来 MEMS器件中的重要材料之一 ,研究其表面磁场分布对实际应用中永磁阵列单元几何尺寸的设计具有重要指导作用。文中建立了厚膜永磁阵列表面磁场分布的计算模型 ,并得到了永磁阵列表面磁场分布。结果表明永磁阵列表面磁场呈周期性分布 ,与磁体单元高度、宽度以及磁体单元间隔密切相关。