基于MMIC工艺的片上射频LC无源滤波器

设计、制作了几种基于MMIC工艺的片上LC低通/带通滤波器并进行了测试.测试结果表明,一个3nH的MMIC电感在6.8GHz下品质因数达到13.8.自谐振频率达到15.5GHz;制作的LC低通/带通滤波器的截止频率或中心频率与设计偏差很小,分别为2%和3.3%;低通滤波器在各自通带内的插入损耗小于3dB,带通滤波器在中心频率的插入损耗为7.2dB.     

线弧参数对铝丝楔焊键合强度的影响研究

文章主要研究了铝丝楔焊键合过程中线弧参数对键合拉力的影响规律,分析了线弧高度、线弧起始角度、拉弧过程中反向距离与键合拉力之间的关系,实验研究表明线弧高度越大,键合拉力越大;不同线弧起始角度和反向距离对稳定性烘焙试验前键合拉力影响不大,而经过300℃、1 h烘焙后,起始角度太大和反向距离越长,其键合拉力离散性大,并出现小于3 gf的拉力情况,这些实验现象和分析结果为实际生产中键合工艺的优化提供了参考。     

使用GaAs MMIC技术的X波段微波频率检测器

The design, fabrication, and experimental results of an MEMS microwave frequency detector are presented for the first time. The structure consists of a microwave power divider, two CPW transmission lines, a microwave power combiner, an MEMS capacitive power sensor and a thermopile. The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully. The MEMS capacitive power sensor is used for detecting the high power signal, while the thermopile is used for detecting the low power signal. Signals of 17 and 10 dBm are measured over the X-band. The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor, and 6.67 MHz / μV under 10 dBm by the thermopile, respectively. The validity of the presented design has been confirmed by the experiment.     

终端式MEMS微波功率传感器的设计与制作

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented. An electrothermal model is introduced to simulate the heat transfer behavior and temperature distribution. The sensor measured the microwave power from –20 to 20 dBm up to 20 GHz. The sensitivity of the sensor is 0.27 mV/mW at 20 GHz, and the input return loss is less than –26 dB over the entire experiment frequency range. In order to improve the sensitivity, four different types of coplanar waveguide （CPW） were designed and the sensitivity was significantly increased by about a factor of 2.     

终端式MEMS微波功率传感器的热时间常数研究

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented.An electrothermal model is introduced to simulate the thermal time constant. An analytical result,about 160 ms,of the thermal time constant from the non-stationary Fourier heat equations for the structure of the sensor is also given.The sensor measures the microwave power jumping from 15 to 20 dBm at a constant frequency 15 GHz,and the experimental thermal time constant result is 180 ms.The frequency is also changed from 20 to 10 GHz with a constant power 20 dBm,and the result is also 180 ms.Compared with the analytical and experimental results,the model is verified.     

间接加热终端式MEMS微波功率传感器的温度模拟

在提出间接加热终端式MEMS微波功率传感器结构和工艺的基础上,用Coventorware软件和ANSYS软件对其温度分布进行了模拟,根据热电堆的放置位置不同,分别对热电堆处于终端电阻的下方(结构A)、上方(结构B)和外侧(结构C)三种结构进行了模拟和比较,最后采用了热电堆处于终端电阻下方的结构,热电堆的热端可以测得的温度范围为417.7～419.2K。     

微波鉴相器的模拟研究

直接在微波频段上论述了肖特基势垒二极管单平衡、双平衡鉴相器的鉴相原理,给出了这两种鉴相器的近似理论鉴相特性解析式,然后模拟了它们的鉴相特性曲线和功率分配耦合器端口特性,模拟的结果与理论得到结论是一致的,最后对二极管单平衡、双平衡微波鉴相器进行了简要的总结.与传统的基于频率变换法的微波鉴相器相比,二极管单平衡、双平衡微波鉴相器的结构简单,整个结构可制成平面集成电路,与GaAs衬底的MMIC工艺兼容.     

0.18 μm射频SOI LDMOS功率器件的研究

在提出0.18μm射频SOI LDMOS功率器件研究方法的基础上,对工艺进行了设计,并制备了栅宽为1 200μm,栅长为0.7μm,漏的注入区与栅的距离为1.5μm的0.18μm射频SOILDMOS功率器件。对器件进行了测试和模拟,在工作频率为3 GHz,直流偏置电压VDS为3 V,VGS为1.5 V,输入功率Pin为5 dBm时,Pout、增益和PAE分别为15 dBm1、0 dB和35%。     

应用Volterra级数分析AlGaAs/GaAsHBT的三阶互调失真

分析了AlGaAs／GaAsHBT的非线性失真产生的机理,应用Volterra级数理论计算了AlGaAs／GaAsHBT的三阶互调失真,理论值与实测值吻合较好,获得了AlGaAs／GaAsHBT的非线性失真量比较弱的结果,其值并不像人们认为的那样强,并解释了HBT高线性度的原因,这证明了AlGaAs／GaAsHBT在抗干扰方面的潜在能力。     

语音合成片和MCU 的接口实现

通过介绍语音合成芯片MSP53C391的工作特性，讨论如何提高语音合成的质量，给出了MCU和语音合成芯片的接口形式、实现方法及接口程序的结构。