Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学microcrystalline silicon, VHF-PECVD, optical emission spectroscopy2005-11-092005-11-092005-12-12This paper reports that the optical emission spectroscopy （OES） is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities （Sill^＊, H^＊ and H^＊β） are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^＊ intensity increases with silane concentration, while the intensities of H^＊α and H^＊β increase first and then decrease. When the substrate temperature increases, the SiH^＊ intensity decreases and the intensities of H^＊α and H^＊β are constant. The correlation between the intensity ratio of IH^＊α/ISiH^＊ and the crystalline volume fraction （Xc） of films is confirmed.     

对一道高考题的再探究

文1中徐道老师对2011年江苏省高考数学试卷第13题进行了讨论与推广,文中的解法及所获结论均不正确.本文将指出文1中解法的错误,并给出正确的结论.例1(2011年江苏省高考数学试卷第13题)设1=a1≤a2≤…≤a7,其中a1,a3,a5,a7成公比为q的等比数列,a2,a4,     

超高真空下过渡金属Nb与Nb、Ta、Ti、W相互间粘附特性的试验研究

本文在超高真空(10~(-7)Pa)条件下量测了Nb-Nb(110)、Nb-Ta(110)、Nb-W(110)及Nb-Ti4个粘附对的粘附力,并从接触表面形貌的角度求得了真实接触面积,进而得到了各粘附对间的粘附强度,结果与采用简单紧束缚自洽矩方法计算所得理论结果一致。研究表明,超高真空下过渡金属间存在一种相互作用——由两金属间共用电子引起的化学键,而且主要由其外层d电子态密度所决定。过渡金属Nb与Nb、Ta、W、Ti之间粘附强度的实测值介于每对原子0.2～2.0eV之间。当样品受热升温后,由于C、N、B、S等少量非金属杂质的表面偏析致使粘附强度明显降低。     

水舌空中左右碰撞的水力特性及其作用下的河床基岩冲刷平衡深度估算

应用紊动射流理论和水流动量方程，提出了水舌空中左右碰撞时合水舌的碰撞流速矢量、碰撞消能效率的计算公式。分析和比较了水舌空中左右碰撞与上下碰撞方式下合水舌的碰撞角，碰撞消能效率和其空中扩散方面的差异，提出了水舌空中左右碰撞作用下河床基岩冲刷平衡深度的一种估算方法。以模型实验资料验证，预测值和实测值基本吻合。因此表明，对水舌空中碰撞的水力特性分析是正确的，河床基岩冲刷平衡深度的估算方法是合理可行的。研究成果可为高坝下游消能防冲参考。     

一种特殊印制电路板加工流程

为适应电子产品向着功能多样化、便携化的发展要求,印制电路板不仅出现高厚径比、精细线路的高密度特征,更是出现了一些特殊结构要求的板件,例如要求树脂填孔且有金属化板边要求,常规流程在树脂磨平加工时,金属化板边易被磨穿而无法生产;还有树脂填孔板件,塞树脂孔与非塞树脂孔距离太近,常规流程在树脂填孔时非塞树脂孔易被污染而无法加工。通过试验研究结合实际生产情况,本文介绍了一种特殊的加工流程,树脂填孔板件,通过将塞树脂孔先加工,非塞树脂孔和外层线路后加工的方式,解决了以上两种板件无法生产的难题。     

引入微晶硅底电池的PIN型三结Si基薄膜太阳电池的制备

为充分利用太阳光谱能量,在玻璃衬底的PIN型a-Si/a-SiGe电池中直接引入了微晶硅(μc-Si:H)底电池.从透明导电氧化物(TCO)衬底的光透过率估算了PIN型a-Si:H/a-SiGe:H/μc-Si:H三结电池实现高转化效率的可行性.通过调整μc-Si:H底电池厚度考察三结电池的性能变化,结果发现,受中间电...     

模拟电子技术设计性实验的探索与研究

针对我校传统模拟电子技术基础性实验存在的问题,我校开展了模拟电子技术设计性实验的探索和研究。实施后,学生的实践能力和创新能力取得了很好效果,契合了我校生物医学工程专业的发展方向。     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

Influence of Intertube Additional Atoms on Sliding Behaviors of Double-Walled Carbon Nanotube

The effects of intertube additional atoms on the sliding behaviors of double-walled carbon nanotubes(DWCNTs) are investigated using molecular dynamics(MD) simulation method.The interaction between carbon atoms is modeled using the second-generation reactive empirical bond-order potential coupled with the Lennard-Jones potential.The simulations indicate that intertube additional atoms of DWCNT can significantly enhance the load transfer between neighboring tubes of DWCNT.The improvement in load transfer is guaranteed by the addition of intertube atoms which are covalently bonded to the inner and outer tubes of DWCNT.The results also show that the sliding behaviors of DWCNT are strongly dependent of additional atom numbers.The results presented here demonstrate that the superior mechanical properties of DWCNT can be realized by controlling intertube coupling.The general conclusions derived from this work may be of importance in devising high-performance CNT composites.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.