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Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber 下载免费PDF全文
This paper studies boron contamination at the interface between the
p and i layers of μ c-Si:H solar cells deposited in a
single-chamber PECVD system. The boron depth profile in the i layer
was measured by Secondary Ion Mass Spectroscopy. It is found that
the mixed-phase μ c-Si:H materials with 40% crystalline
volume fraction is easy to be affected by the residual boron in the
reactor. The experimental results showed that a 500-nm thick μ
c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment
can effectively reduce the boron contamination at the p/i interface.
However, from viewpoint of cost reduction, the hydrogen plasma
treatment is desirable for solar cell manufacture because the
substrate is not moved during the hydrogen plasma treatment. 相似文献
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Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD 总被引:4,自引:0,他引:4 下载免费PDF全文
Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD. 相似文献
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针对旋转导向钻井工具姿态测量系统陀螺仪故障问题,提出一种陀螺仪加性故障估计与处理方法.首先将陀螺仪故障增广为状态变量,融合加速度计测量信息建立非线性测量模型;然后针对由于模型线性化、陀螺仪漂移、钻井过程的高温、高压、强振动等因素导致卡尔曼滤波算法估计精度变差的问题,将测量误差等效为幅值有界但分布未知的误差,提出了一种自... 相似文献
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VHF-PECVD法制备P型微晶硅锗的研究 总被引:2,自引:2,他引:0
以SiH4和GeF4为反应气体,采用甚高频等离子体增强化学气相沉积(VHF-PECVD)方法制备了P型微晶硅锗(P-μc-Sil-xGex)薄膜。研究GeF4浓度对P型微晶硅锗材料组分、结构及电学特性的影响。随GeF4浓度的增加,薄膜中的锗含量增加,暗电导和晶化率先增加,后减小;在薄膜厚度为72nm,GeF4浓度为4%时,得到了电导率达1.68s/cm,激活能为0.047eV,晶化率为60%,在长波区域的平均透过率超过0.9的P型微晶硅锗。 相似文献
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Two-dimensional(2D) ferromagnetic materials have been exhibiting promising potential in applications,such as spintronics devices.To grow epitaxial magnetic films on silicon substrate,in the single-layer limit,is practically important but challenging.In this study,we realized the epitaxial growth of Mn Sn monolayer on Si(111) substrate,with an atomically thin Sn/Si(111)-231/2 × 231/2-buffer layer,and controlled the Mn Sn thickness with atomic-layer precision.We discovered th... 相似文献