Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.     

三种模拟生物膜作为味觉传感器的比较研究

对人工液膜，双层脂质膜，醋酸纤维膜三种味觉传感器的传感性进行了比较研究，为建立测定味觉反应的定性，定量方法进行了初步探讨。     

Pb/Sn凸剪切性能研究

在实际使用条件下,Pb/Sn凸点会由于承受温度循环而产生剪切应力,剪切应力导致的主要失效方式是开裂.通过对倒装焊后Pb/Sn凸点剪切强度的测量及对剪切后断口的分析,发现破坏主要发生在凸点下金属(UBM)层内部或UBM与Al焊盘之间,平均剪切强度受凸点尺寸影响很小,范围在21～24MPa。     

最大似然方法和Bayes方法在结构方程模型分析中的讨论(英文)

本文通过模拟研究,讨论了最大似然方法和Bayes方法在分析结构方程模型中的相似点和不同之处。     

100μmFIR-FEL摇摆器的改进

经过几年实验发现，摇摆器的磁场强度、峰值误差和好场区宽度对束波作用效率有很大影响。为了提高摇摆器性能对摇摆器如下改进：（1）提高磁场强度：永磁块材料采用北京钢研院的钕铁硼N39SH，其风达到11．6kOe（10e≈79．578A／m），B，达到12．3kGs（1Gs=10^-4T），（BH）max为36MGOe；摇摆器周期长度由30mm改为32mm，磁块与磁极宽度的比值由9：6改为11：5；（2）减小峰值误差和增加好场区宽度：改进永磁块、磁极的形状和固定方式，从机械上消除不规则磁块、磁极形状带来的负面影响。通过上述改进可以提高单电子小信号增益与理想增益的比率，即提高整个摇摆器品质。精密的磁场自动测量系统是摇摆器调试过程中所必须的装置，该系统经过改进，具有高精度、高稳定度、可同时监测x、y、z方向磁场值、操作方便等优点，为摇摆器的研制打下良好基础。     

无线电能传输技术近在眼前

可能在不远的将来,用户就有可能摆脱使用充电器充电、更换电池以及接插家电设备电源线等麻烦.利用无线方式将电能传输到所用产品的技术即将进入实际应用阶段.     

Effects of Dual-Electrode Biasing on Er in a Toroidal Plasma

Two externally biased electrodes were inserted into the plasma on the KT-5C tokamak to test the effects on modifying the radial electric field Er, other than single biasing. Using various combinations of biasing voltage,the influences of double biasing are compared with the single biasing. It turns out that the effect of dual-biasing is also effective as a single one, but the outer electrode seems to be shielded by the inner one and show less influence. The results clearly show that the radial electric field Er changed by external biasing is intrinsically an effect localized at the edge of the plasma, which is caused by the electrode induced radial current; and dualelectrode biasing using the method similar to the single biasing seems not to be able to increase more distinctly the peaking effect on Er than the single biasing.     

黑白电视机用简易静噪电路

<正> 黑白电视机开机后,如无电视信号,扬声器会发出讨厌的噪声。为消除此种噪声,可在电视机电路中插入各式各样的静噪电路。这里介绍一种简易静噪电路,它所用元件少,仅用了两块集成电路,可靠性高。 静噪电路原理见图1。图中,运放IC1(μA741CP)用做比较器,集成电路IC2(CD4066)用做控制器。中放AGC电压(正向)直接输入比较器IC1③脚,②脚送入比