半磁半导体Cd_(1-x)Mn_xTe压力光致发光研究

采用金刚石对顶砧压机,在77K和不同压力下测量了半磁半导体Cd_(1-x)Mn_xTe(x=0.25,0.40,0.60)的光致发光光谱.分别在x=0.25和x=0.40的Cd_(1-x)Mn_xTe和Cd_(0.4)Mn_(0.6)Te中观察到两种不同性质的复合发光。根据发光峰的能量位置及其随压力的变化可以判定在Cd_(0.75)Mn_(0.25)Te和Cd_(0.6)Mn_(0.4)Te中的发光峰对应于带间复合发光,而Cd_(0.4)Mn_(0.6)Te中的发光峰对应于Mn离子3d↓能级到杂化价带的复合发光.     

Hg1-xCdxTe n+-p光电二极管中的深能级及其电流机构的流体静压力研究

在流体静压力(0—2GPa)下,对Hg_1-xCd_xTe n⁺-p光电二极管(x=0.5)室温电学特性进行了实验和理论研究。通过考虑深能级压力效应及其对深能级辅助隧道电流的影响,较好地解释了实验上观察到的p-n结伏安特性在小偏压范围下呈现的“反常”压力关系。由对实验数据的理论拟合得到两个深能级:D₁(=E_v+0.75E_g)和D₂(=E_v关键词：     

流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性

在77K和室温下,研究了Hg_(1-x)Cd_xTe(x=0.5)p—n结伏安特性随流体静压力的变化,从中得到了禁带宽度E_g的压力系数。结果表明,在低压范围(01.4GPa),E_g～P关系明显偏离线性。实验还观察到,在正、反向小偏压区域,I—V特性随压力的变化呈现“反常”行为。     

高压下半磁半导体Cd1-xMnxSe的相变研究

利用金刚石对顶砧高压装置,并分别用光吸收和X射线衍射实验方法测量了Cd_1-xMn_xSe样品在高压下的相变,发现该样品的高压相变是不可逆,常压下Cd_1-xMn_xSe具有纤维锌矿结构,高压下变为NaCl结构,而卸压后成为闪锌矿结构,同时给出了Cd_1-xMn_xSe样品的相变压力及其与组分x的关系。 关键词：     

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.     

远红外激光辐射特性的测量

光泵远红外激光器是远红外谱区的重要辐射源。在GaAs肖特基势垒二极管(SBD)外差混频远红外接收实验中,光泵远红外激光器作为信号源或本振源而得到应用。远红外激光与各种接收系统(例如SBD混频接收系统、准光学接收系统)的输入耦合,都与远红外激光辐射的场分布(模式)、输出功率以及偏振等辐射特性有密切关系。因此,远红外激光辐射特性的测量显得十分重要。     

182Hf实验室参考标准的研制与加速器质谱测量

介绍了用于HI-13串列加速器质谱(AMS)测量的¹⁸²Hf实验室参考标准的研制. 通过¹⁸⁰Hf的连续热中子俘获产生¹⁸²Hf, 用热电离质谱对初始参考标准的同位素比进行了精确测量. 取一定量的初始参考标准, 加入已知量的稳定同位素(¹⁸⁰Hf)作为稀释剂, 通过逐级稀释的方法, 最终得到同位素比从10^－6—10^－10的一系列参考标准. 并对该系列参考标准进行了AMS测量, 结果显示¹⁸²Hf/¹⁸⁰Hf的测量值与标称值呈良好的线性关系, 说明该AMS系统可以准确测量同位素比在10^－6—10^－10范围内的样品.     

Recent progress in AMS measurement of 182Hf at the CIAE

In order to improve the accuracy of accelerator mass spectrometry (AMS) measurement for ¹⁸²Hf/¹⁸⁰Hf, a series of measurements have been taken in the AMS laboratory at the China Institute of Atomic Energy (CIAE). The major ones include the instantaneous monitoring of ¹⁸⁰HfF₅^- current, testing the stability of transmission, the alternate measurements of an unknown sample and standard, and the origin identification and minimization of background ¹⁸²W. The experimental details and the improvement in the measurement accuracy, as well as some useful suggestions for better satisfying the requirements of certain practical applications, are presented in this paper.