Σ-Δ模拟/数字转换器综述

Σ-ΔA/D转换器是利用速度换取精度的高精度模拟/数字转换器。文章分析了Σ-ΔA/D转换器的产生、组成和优势,重点介绍了Σ-Δ调制器结构及其性能指标,简要介绍了数字抽取滤波器。对Σ-ΔA/D转换器国内外发展状况进行了全面的分析。在此基础上,论述了Σ-ΔA/D转换器未来的发展趋势。     

共青团中央大礼堂和多功能厅工程音视频和数字电影放映系统的主要技术特点

该项目是团中央2009年的重点工程．书记处所有领导都非常重视，多次亲临现场视察和指导。它的建成将彻底解决团中央机关长期以来一直缺乏大型会议和娱乐场所的困难。     

移动信息化解决方案浅析

在介绍社会信息化的背景下，着重阐述了基于北京联通CDMA 1x“网中数据网”业务的移动信息化方案技术细节和特点，并列举了移动信息化方案的成功应用。     

硅各向异性腐蚀的原子级模拟

应用原子级模型中的随机CA算法,针对硅材料和具体的工艺特点,构造了相应的函数,并在此基础上编制了应用软件--SSAE.该软件可独立运行,能够模拟出硅在KOH中不同腐蚀条件下腐蚀的过程和结果,并且克服了其他采用原子级模型的模拟软件中常出现的边界模糊等缺点.该结果与其他软件和实验结果相比,较为一致,并且该软件具有占用系统资源少、运行时间快等优点,具有一定的实用价值.     

Transparent Ni^2＋-Doped MgO-Al2O3-SiO2 Glass Ceramics with Broadband Infrared Luminescence

We report on transparent Ni^2＋-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence. Ni^2＋-doped MgO-Al2O3-SiO2 glass is prepared by using the conventional method. After heat treatment at high temperature, MgAl2O4 crystallites are precipitated, and their average size is about 4.3 nm. No luminescence is detected in the as-prepared glass sample, while broadband infrared luminescence centred at around 1315 nm with full width at half maximum （FWHM） of about 300 nm is observed from the glass ceramics. The observed infrared emission could be attributed to the ^3T2g（^3F）→^3A2g（^3F） transition of octahedral Ni^2＋ ions in the MgAl2O4 crystallites of the transparent glass ceramics. The product of the fluorescence lifetime and the stimulated emission cross section is about 1.6×10^-24 s cm^2.     

应用迭代法求解一类非线性问题

本文应用迭代法求解一类有限维非线性问题,该方法是求解线性问题的雅可比迭代法在非线性问题上的推广,且此迭代方法具有几何收敛性质.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1:1.01-1:1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学常数、厚度、气孔率、ZnSe的浓度进行了数据拟合.利用荧光光谱分析了薄膜的光致发光,结果表明在波长为395nm的激发光下,487nm的发射峰对应着闪锌矿型ZnSe的带边发射,同时也观测到薄膜中ZnSe晶体增强的自由激子发射及伴随着ZnSe晶体缺陷而产生的辐射发光.     

Raman Scattering Detection of Stacking Faults in Free-Standing Cubic-SiC Epilayer

We report on stacking fault （SF） detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si（100） substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability （BP） model in the framework of linearchain concept. Cood agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 A in the BP model.     

Raman spectra of undoped and uranium doped CaF_2 single crystals

Raman scattering experiments for nominally pure and uranium doped CaF2 single crystals were presented. In all crystals, the Raman active T2g vibration mode of CaF2 was observed, whose frequency shift and full-width at half-maximum (FWHM) broadening correspond well with defects and impurities in CaF2 lattice. Additional Raman peaks develop in nominally pure CaF2 with high etch pits density and U6+:CaF2 crystals. Part of additional Raman peaks in the experimental results, which are assumed due to vibration modes from F- interstitials and vacancies, are in well agreement with the theoretical predications by employing the Green-function formulation.