1.78 μm应变InGaAs-InGaAsP-InP分布反馈量子阱激光器

采用低金属有机汽相外延(LP-MOVPE)生长大应变InGaAs/InGaAsP做有源区,研制了激射波长为1.78μm的脊波导分布反馈(DFB)激光器,对于解理腔长为900μm的激光器,室温时其激射的阈值电流为33mA,最大单面光输出功率/和单面外微分量子效率分别为8mW和7％;此外,激射光谱边模抑制比(SMSR)为27.5dB。     

Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector （SG-DBR） laser with a quantum-well electroabsorption modulator （QW-EAM） by combining ultra-low-pressure （55 mbar） selectivearea-growth （SAG） metal-organic chemical vapour deposition （MOCVD） and quantum-well intermixing （QWI） for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V.     

宽带偏振不灵敏InGaAs半导体光放大器

采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构,研制了宽带偏振不灵敏的半导体光放大器.此放大器在100～250mA的工作电流范围内,获得了大于70nm的3dB光带宽;在0～250mA工作电流和3dB光带宽波长范围内,偏振灵敏度小于1dB.对于1.55μm的信号光,在200mA的注入电流下获得了15.6dB的光纤到光纤的增益、小于0.7dB的偏振灵敏度和4.2dBm的饱和输出功率.     

1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长

报道了用低压金属有机物化学气相淀积（ＬＰ－ＭＯＣＶＤ）方法外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变补偿多量子阱结构。用此材料制备的掩埋异质结（ＢＨ）条形结构多量子阱激光器具有极低阈值电流４～６ｍＡ。２０～４０℃时特征温度Ｔ０高达６７Ｋ，室温下外量子效率为０．３ｍＷ／ｍＡ。     

选择外延技术研制1.5μm DFB激光器和自对准模斑转换器集成器件

利用选择外延技术研制了1.5μm DFB激光器和自对准模斑转换器单片集成器件.激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料,同时可以降低选择性生长对接结构的难度.所研制集成器件的阈值为4.4mA,在49.5mA下的输出功率为10.1mW,边模抑制比为33.2dB,垂直方向和水平方向上的远场发散角分别为9°和15°,1dB偏调容差分别为3.6μm和3.4μm.     

在高阻硅衬底上制备低微波损耗的共面波导

分别在普通的低阻硅衬底、带有3μm厚氧化硅介质层的低阻硅衬底和高阻硅衬底上设计并制备了微波传输共面波导.结果表明,低阻硅衬底导致过高的微波损耗从而不能使用,通过加氧化硅介质层,微波损耗可以大大减少,但是需要较厚的氧化硅厚度.直接制备在高阻硅衬底上的共面波导在所测试的26GHz的频率范围内获得低于2dB/cm的微波损耗,而且工艺十分简单.     

渐变应变偏振不灵敏半导体光学放大器

采用渐变应变有源区结构,制备出偏振不灵敏半导体光学放大器,工作电流在60～160mA范围内,其3dB带宽范围不小于35nm,偏振不灵敏度小于0.35dB,自发发射出光功率为0.18～3.9mW.     

A double wavelength DFB laser with an identical active area for CWDM

A novel distribute feedback (DFB) laser which gave two different wavelengths under two distinct work conditions was fabricated. The laser consists of two Bragg gratings with different periods corresponding to wavelength spacing of 20 nm in an identical active area. When driving current was injected into one of the different sections separately, two different wavelengths at 1542.4 and 1562.5 nm were realized. The side mode suppression ratio (SMSR) of 45 dB or more both for the two Bragg wavelengths were achieved. The fabricating process of the laser was just the samp as that of traditional DFB laser diode. This device can be potentially used in coarse wavelength division multiplexer (CWDM) as a promising light source and the technology idea can be used to enlarge the transmission capacity in metro area network (MAN).     

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

Tunable distributed Bragg reflector (DBR) lasers are essential components for future optical fiber communi- cation systems[1]. A tunable laser can replace a large number of distributed feedback (DFB) lasers as sparing source in wavelength division multiplexing (WDM) sys- tems. Moreover they allow flexible switching and routing for distributed data in future network[2]. There are several methods for integrating gain sec- tion with DBR section, such as butt-joint method, bundle method, and …     

同一芯片上制作变周期布拉格光栅的改进全息曝光法

提出了一种采用传统光学全息曝光技术，在同一芯片上制作不同周期的布拉格光栅的新方法．在这个简单实用的方法中，聚酰亚胺用来保护第一次做好的某一周期的光栅．这种新方法制作工艺简单，成本低，且与传统的半导体工艺兼容．