Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

基于Terminal滑模的有限时间混沌同步实现

提出了混沌同步有限时间实现问题，将Terminal滑模控制技术与混沌同步问题相结合，把同步问题视为响应系统的跟踪问题，给出了由线性滑模函数引入非线性项构造Terminal滑模面的充分条件，以及相应Terminal滑模控制器.以主从Duffing系统为例研究验证同步策略的可行性和有效性. 关键词： Terminal滑模 混沌同步 Duffing系统     

染料分子吸附在正、负电性纳米银上的荧光增强及荧光猝死现象

制备了两种不同表面电性的胶态纳米银，选取阴离子型染料分子荧光素钠、既有阴离子基团又有阳离子的染料分子罗丹明B，研究其在两种纳米银表面的荧光增强及荧光猝死现象，当罗丹明B（RhB）分子分别吸附在这两种纳米银上时，对负电性纳米银，观察到荧光猝死、荧光峰红移现象，且在分子的浓度适当时，加入KBr可获得较强的表面增强拉曼光谱：在正电性纳米银上，当分子的浓度较大时观察到荧光猝灭，当分子的浓度较小时观察到荧光增强，而当荧光素钠分子（FS）分别吸附在这两种纳米银上时，在负电性纳米银，观察到荧光猝死；在正电性纳米银上观察荧光急剧增强现象，从分子的结构及纳米银表面局域场增强或无辐射通道的增加对增强和猝灭的原因作了讨论。     

光纤模式混合器在差分吸收光谱系统中的应用研究

差分吸收光谱技术(DOAS)已经发展为监测对流层痕量气体的重要技术，一般采用光电倍增管(PMT)作为探测器.由于光电二极管阵列(PDA)在多道探测及像元灵敏性方面的优势，采用PDA代替扫描探测装置将能改善系统剩余噪声，提高系统性能.但实际应用中由于使用收发一体Cassegrain望远镜造成灯谱与大气谱结构不统一，在消除PDA像元间差异的过程中给系统带来误差，从而导致剩余噪声的标准偏差达到1.4×10^-3.根据光纤扰模原理在系统中加入自制光纤模式混合器很好的解决了上述难题，在实际应用中起到良好的作用，系统剩余噪声的标准偏差为3.4×10^-4. 关键词： 差分吸收光谱 扰模 模式混合器 剩余噪声     

R600a喷雾冷却系统换热过程

以R600a压力式封闭系统喷雾冷却过程为研究对象,对其换热过程进行分析。对液滴撞击热面后的状态进行建模,分析了其运动状态。通过忽略液膜的对流换热,引入韦伯数来简化并修正雾滴与热源表面的对流换热系数关联式;借鉴二次成核理论,通过单位时间内,单位面积上覆盖的雾滴数量对核态沸腾换热系数关联式修正。通过上述分析,以对流换热和核态沸腾换热两种机理为中心,建立了新的换热系数关联式。通过与其他文献的关联式、实验测量值进行比较、不同工质进行比较、不同实验系统比较,发现该式预测值和实验测量值偏差在±20%以内,能够很好地预测压力式封闭系统喷雾冷却过程的换热系数。     

关于量子体系的高效相干能量转移的最优初始化的研究

For an energy transfer network, the irreversible depletion of excited electron energy occurs through either an efficient flow into an outer energy sink or an inefficient decay. With a small decay rate, the energy transfer efficiency is quantitatively reflected by the average life time of excitation energy before being trapped in the sink where the decay process is omitted. In the weak dissipation regime, the trapping time is analyzed within the exciton population subspace based on the secular Redfield equation. The requirement of the noise-enhanced energy transfer is obtained, where the trapping time follows an exact or approximate 1/Γ-scaling of the dissipation strength Γ. On the opposite side, optimal initial system states are conceptually constructed to suppress the 1/Γ-scaling of the trapping time and maximize the coherent transfer efficiency. Our theory is numerically testified in four models, including a biased two-site system, a symmetric three-site branching system, a homogeneous onedimensional chain, and an 8-chromophore FMO protein complex.     

旋转双棱镜光束指向控制技术综述

旋转双棱镜系统通过两棱镜的共轴独立旋转改变光的传播方向,可用于调整光束或视轴指向。与传统的两轴、三轴式光电平台相比,基于旋转双棱镜设计的光束或视轴调整装置具有精度高、结构紧凑、动态性能好等优点,已成为传统光电平台的有益补充。本文分析了双棱镜系统的光束指向调整机制;介绍了国内外相关基础研究的热点问题,主要涉及光束转向机制、光束扫描模式、棱镜回转控制以及棱镜引起的光束变形、成像色差、成像畸变的研究。文中描述了该项技术的应用进展,给出了利用该项技术开发的典型产品以及该项技术在激光光束指向调整和目标搜索、识别与跟踪成像方面的应用。最后,探讨了旋转棱镜在扫描模式、光束质量、成像色差与畸变、回转控制等方面面临的技术难题,并对其发展趋势进行了展望。     

反应离子刻蚀ZnTe的THz辐射和探测研究

运用电光采样技术揭示了反应离子刻蚀（RIE）ZnTe晶体表面THz辐射的光学整流产生机制， 观察到0.25 ps的THz场分布.通过比较刻蚀前后以及不同刻蚀条件下ZnTe样品在不同激发功 率下的THz辐射强度，发现由于反应离子刻蚀破坏了ZnTe样品表面的有序性，晶体的电光系 数随射频功率的增加而减小.借助于计算不同刻蚀条件下ZnTe晶体的频率响应函数，分析了 随射频功率增加ZnTe晶体响应频谱展宽的现象. 关键词： THz辐射 反应离子刻蚀 ZnTe     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

Quantum Bidirectional Secure Direct Communication via Entanglement Swapping

In light of a quantum secure direct communication （QSDC） scheme using entanglement swapping [Chin. Phys. Lett. 22 （2005）18], by introducing additional local operations for encoding, we propose a bidirectional QSDC （BQSDC） protocol, in which two legitimate users can simultaneously exchange their respective messages. The rule for the users to retrieve his/her partner＇s messages is derived explicitly in the most general case. Eve＇s commonly used attack method has been discussed and can be detected with the security checking process.