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The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells 下载免费PDF全文
This paper studies the effects of silane back diffusion in
the initial plasma ignition stage on the properties of
microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy
and spectroscopic ellipsometry, through delaying the injection of
SiH7280N, 7830G, 8115H http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057205 https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111771 back diffusion, microcrystalline silicon, thin film, Raman
crystallinity Project supported by the State Key
Development Program for Basic Research of China (Grant
No.~2006CB202601). This paper studies the effects of silane back diffusion in
the initial plasma ignition stage on the properties of
microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy
and spectroscopic ellipsometry, through delaying the injection of
SiH$_{4}$ gas to the reactor before plasma ignition. By comparing
with standard discharge condition, delayed SiH$_{4}$ gas condition
could prevent the back diffusion of SiH$_{4}$ from the reactor to
the deposition region effectively, which induced the formation of a
thick amorphous incubation layer in the interface between bulk film
and glass substrate. Applying this method, it obtains the
improvement of spectral response in the middle and long wavelength
region by combining this method with solar cell fabrication.
Finally, results are explained by modifying zero-order analytical
model, and a good agreement is found between model and experiments
concerning the optimum delayed injection time. back;diffusion;microcrystalline;silicon;thin;film;Raman;crystallinity This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon(μc-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry,through delaying the injection of SiH4 gas to the reactor before plasma ignition.Compared with standard discharge condition,delayed SiH4 gas condition could prevent the back diffusion of SiH4 from the reactor to the deposition region effectively,which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate.Applying this method,it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication.Finally,results are explained by modifying zero-order analytical model,and a good agreement is found between the model and experiments concerning the optimum delayed injection time. 相似文献
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脉冲退火法制备多晶硅薄膜的研究 总被引:1,自引:1,他引:0
用射频等离子体化学气相沉积(RF-PECVD)法在普通玻璃衬底上低温制备了μc-Si:H薄膜.采用快速光热退火炉(RTP),分别用低温(<650℃)和中温(<750℃)脉冲法(PRTP)对薄膜进行了退火处理.用拉曼光谱和扫描电子显微镜(SEM)研究了不同条件下退火薄膜散射谱的特征和表面形貌.结果显示,脉冲退火法晶化的薄膜,晶化率达到了53;,部分颗粒团簇的尺寸已达到200nm左右.用声子限域理论和表面尺寸效应对薄膜频谱的"红移"和"蓝移"现象进行了分析. 相似文献
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用磁控溅射法在玻璃衬底上制备了掺铝氧化锌(AZO)薄膜,然后用脉冲式快速光热处火(PRTP)法对样品进行了600~800℃的退火处理.采用X射线衍射仪(XRD)、分光光度计、四探针等测试手段对AZO薄膜的结晶性能、透光率和导电性能进行了表征.结果表明:(1)薄膜退火后透光率基本维持在退火前(82~92;)的水平,而电阻率则由10-4Ω·cm 上升了1到6个数量级,已丧失了"导电膜"意义;(2)样品具有好的结构性能有利于提高样品的导电性能.对此现象进行了理论分析. 相似文献
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在化学气相沉积微晶硅薄膜过程中,为了降低成本,必须提高生长速率,但薄膜的微观结构和光电性能则随之降低,原因是成膜先驱物在薄膜表面上的扩散长度降低了. 本文利用量子化学的反应动力学理论建立有关成膜先驱物SiH3和H的反应平衡方程,求解薄膜生长速率和成膜先驱物的扩散长度,并找出影响生长速率与扩散长度的微观参数,发现生长速率不仅与流向衬底的SiH3的通量密度有关,而且与H的通量密度有关;SiH3的扩散长度与衬底温度和薄膜表面的硅氢键的形态有关,当 相似文献
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以B2H6为掺杂剂,采用射频等离子体增强化学气相沉积技术在玻璃衬底上制备p型氢化微晶硅薄膜.研究了衬底温度和硼烷掺杂比对薄膜的微结构和暗电导率的影响.结果表明:在较高的衬底温度下很低的硼烷掺杂比即可导致薄膜非晶化;在实验范围内,随着衬底温度升高薄膜的晶化率单调下降,暗电导率先缓慢增加然后迅速下降,变化趋势与硼烷掺杂比的影响极为相似.最后着重讨论了p型氢化微晶硅薄膜的生长机理.
关键词:
p型氢化微晶硅薄膜
衬底温度
晶化率
电导率 相似文献